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µPB1005K REFERENCE FREQUENCY 16.368 MHz, FREQUENCY 4.092 RF/IF FR


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BIPOLAR ANALOG DIGITAL INTEGRATED CIRCUIT
µPB1005K
REFERENCE FREQUENCY 16.368 MHz, FREQUENCY 4.092 RF/IF FREQUENCY DOWN-CONVERTER FREQUENCY SYNTHESIZER RECEIVER
DESCRIPTION
µPB1005K silicon monolithic integrated circuit receiver. This designed double conversion block integrated RF/IF down-converter frequency synthesizer chip. µPB1005K features 36-pin plastic QFN, fixed prescaler supply voltage. 36-pin plastic package suitable high density surface mounting. fixed division internal prescaler needless input serial counter data. Supply voltage Thus, µPB1005K make block fewer components lower power consumption. This manufactured using NEC's NESATTMIII silicon bipolar process. This process uses direct silicon nitride passivation film gold electrodes. These materials protect chip surface from pollution prevent corrosion/migration. Thus, this realizes excellent performance, uniformity reliability.
FEATURES
Double conversion Integrated block fREFin 16.368 MHz, f2ndIFout 4.092 RF/IF frequency down-converter frequency synthesizer
High-density surface mountable 36-pin plastic (6.0 0.95 Needless input counter data fixed division internal prescaler side division Reference division Supply voltage current consumption Gain adjustable externally serial prescaler) 45.0 TYP.@VCC Gain control voltage (control voltage gain down)
APPLICATION
Consumer receiver reference frequency 16.368 MHz, frequency 4.092
ORDERING INFORMATION
Part Number Package 36-pin plastic Supplying Form Embossed tape wide. pull-out direction. kp/reel.
µPB1005K-E1
Remark
order evaluation samples, please contact your local sales office. (Part number sample order: µPB1005K) Caution Electro-static sensitive device
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document P14016EJ1V0DS00 (1st edition) Date Published November 1999 CP(K) Printed Japan
1999
µPB1005K
CONNECTION INTERNAL BLOCK DIAGRAM
(reference block)
N.C. REFin N.C. (divider block) LOout (divider block) (Phase detector) PD-Vout1 PD-Vout2
(2ndIF-AMP)
2ndIFbypass
(2ndIF-AMP)
2ndIFin1
2ndIFout
2ndIFin2
N.C.
IF-MIXout N.C. (IF-MIX) (IF-MIX) N.C. IF-MIXin (IF-MIX) RF-MIXout (RF-MIX)
1stLO-OSC1
(phase detector)
(1stLO-OSC)
RF-MIXin
(RF-MIXin)
(1stLO-OSC)
N.C.
REFout
Preliminary Data Sheet P14016EJ1V0DS00
1stLO-OSC2
PD-Vout3
µPB1005K
PRODUCT LINE-UP
Functions (Frequency unit: MHz) (mA) (dB)
Type General Purpose Wideband Separate
Part Number
Package 6-pin minimold 6-pin super minimold
Status Available
µPC2756T µPC2756TB µPC2753GR
down-converter with osc.
down-converter with gain control amplifier RF/IF down-converter synthesizer 18.414 1stIF 28.644/2ndIF 1.023 RF/IF down-converter synthesizer 16.368 1stIF 61.380/2ndIF 4.092
20-pin plastic SSOP (225 mil) 30-pin plastic SSOP (300 mil) Discontinued
Clock µPB1003GS Frequency Specific chip
37.5
µPB1004GS µPB1005GS µPB1005K
37.5 45.0
36-pin plastic Available
Notice
Typical performance. Please refer ELECTRICAL CHARACTERISTICS detail. know associated products, please refer their latest data sheets.
SYSTEM APPLICATION EXAMPLE
receiver block diagram
1.023 diagram. 60f0 RF-MIXout 1540f0 1540f0 64f0 1/25 1600f0 LOOP 1stLO-OSC1 1stLO-OSC2 LOOUT TCXO 16.368 16f0 16f0 16.368 Buff Demodulator RF-MIX IF-MIXin IF-MIX IF-MIXout 40f0 2ndlFin1 2ndlFin2 2ndlFbypass 2ndlF-Amp 4.092 Buff Demodulator PB1005K
1575.42 from Antenna
e.g. PC2749TB
Caution
This diagram schematically shows only µPB1005K's internal functions system. This diagram does present actual application circuits.
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
ABSOLUTE MAXIMUM RATINGS
Parameter Supply Voltage Total Circuit Current Power Dissipation Symbol Mounted double-sided copper clad epoxy glass Conditions Rating +150 Unit
Operating Ambient Temperature Storage Temperature
Tstg
RECOMMENDED OPERATING RANGE
Parameter Supply Voltage Operating Ambient Temperature Input Frequency Oscillating Frequency Input Frequency Input Frequency Input/output Frequency Symbol fRFin f1stLOin f1stIFin f2ndLOin f2ndIFin f2ndIFout fREFin fREFout fLOout MIN. 1616.80 TYP. 1575.42 1636.80 61.38 65.472 4.092 MAX. 1656.80 Unit
Reference Input/output Frequency
16.368
Output Frequency
8.184
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
ELECTRICAL CHARACTERISTICS (Unless otherwise specified
Parameter Total Circuit Current Symbol ICCtotal Conditions ICC1 ICC2 ICC3 ICC4 MIN. 32.0 TYP. 45.0 MAX. 60.0 Unit
Down-converter Block (fRFin 1575.42 MHz, f1stLOin 1636.80 MHz, PLOin dBm, Circuit Current Conversion Gain RF-SSB Noise Figure Maximum Output ICC1 CGRF NFRF PO(sat)RF Signals PRFin PRFin PRFin 12.5 -5.5 10.0 15.5 10.0 -2.5 14.0 18.5 13.0 +0.5
Down-converter Block (f1stIFIn 61.38 MHz, f2ndLOIn 65.472 MHz, Circuit Current Conversion Voltage Gain IF-SSB Noise Figure Maximum 2ndIF Output Gain Control Voltage Gain Control Range ICC2 CG(GV)IF NFIF PO(sat)IF Signals Maximum Gain, P1stIFin Maximum Gain, P1stIFin Maximum Gain, P1stIFin Voltage Maximum Gain CGIF P1stIFin -9.5 11.5 -6.5 14.5 -3.5
Amplifier (f2ndIF 4.092 MHz, Circuit Current Voltage Gain Output Power Synthesizer Block Circuit Current Phase Comparing Frequency Reference Input Minimum Level Loop Filter Output Level Loop Filter Output Level Reference Output Swing ICC4 Block Operating Loop
Note
ICC3 P2ndIFout
Signals P2ndIFin P2ndIFin
1.55 -14.5
2.40 -11.5
3.25 -8.5
18.5
28.5 8.184
38.5
VREFin
k//20
mVP-P
VLP(H) VLP(L) VREFout k//2
Note
VP-P
Note Impedance measurement equipment
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
STANDARD CHARACTERISTICS (Unless otherwise specified
Parameter Symbol Conditions Reference Unit
Down-converter Block (P1stLOin dBm, Leakage Leakage Input Order Intercept Point LOif LOrf IIP3RF f1stLOin 636.80 f1stLOin 636.80 fRFin1 MHz, fRFin2 1605 f1stLOin
Down-converter Block (1st oscillating, Leakage Leakage Input Order Intercept Point Block Phase Noise Loop, 1kHz wave dBc/Hz LO2ndif LO1stif IIP3IF f2ndLOin 65.472 f2ndLOin 65.472 f1stIFin1 61.38 MHz, f1stIFIn2 61.48 f2ndLOin 65.472
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
EXPLANATION
Applied Voltage Voltage 1.68
Name
Function Application
Internal Equivalent Circuit
RX-MIXout
Output mixer. filter must inserted between Supply voltage mixer block. This must decoupled with capacitor (example: pF). Input mixer. 575.42 band pass filter inserted between external LNA. Ground mixer. Supply voltage differential amplifier oscillator circuit. each base differential amplifier oscillator. These pins should equipped with varactor oscillate 636.80 VCO. Ground differential amplifier oscillator circuit. Supply voltage phase detector active loop filter. connection Pins active loop filter tuning voltage output. active transistors configured with darlington pair built chip. should pulled down with external resistor. should equipped with external order adjust dumping factor cutoff frequency. This tuning voltage output must connected varactor diode LO-OSC. Ground phase detector active loop filter.
(RF-MIX)
1stLO -OSC
RF-MIXin
1.20
(RF-MIX) (1stLO-OSC)
RF-MIX Prescaler input
1stLO-OSC1
1.88
1stLO-OSC2
1.88
(1stLO-OSC)
(phase detector)
N.C. PD-Vout3
Pull-up with resistor
PD-Vout2
Output accordance with phase difference
PD-Vout1
Pull-up with resistor
(phase detector)
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
Applied Voltage Voltage
Name
Function Application
Internal Equivalent Circuit
(divider block) LOout
Supply voltage prescalers. Monitor comparison frequency phase detector. Ground prescalers LOout amplifier connection Input reference frequency. This should equipped with external 16.368 oscillator (example: TCXO). connection Supply voltage input/output amplifiers reference block. Output reference frequency. frequency from took VP-P swing. connection Output amplifier. This output 4.092 clipped sinewave. This should equipped with external inverter adjust level next stage user's system. Supply voltage amplifier. Bypass amplifier input This should grounded through capacitor. amplifier input This should grounded through capacitor. amplifier input filter inserted between Ground amplifier.
2.08 1.96
Ref.
(divider block) N.C. REFin
N.C. (reference block) REFout
1.65
N.C. 2ndIFout
1.56
(2ndIF-AMP) 2ndIF bypass
2.30
2ndIFin2
2.35
2ndIFin1
2.35
(2ndIF-AMP)
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
Applied Voltage Voltage 1.15
Name
Function Application
Internal Equivalent Circuit
IF-MIXout
Output from mixer. mixer output signal goes through gain control amplifier before this emitter follower output port. connection Gain control voltage mixer output amplifier. This voltage performs forward control (VGC Gain down). Supply voltage mixer, gain control amplifier emitter follower transistor. connection Input mixer. Ground mixer.
N.C. (IF-MIX)
(IF-MIX)
N.C. IF-MIXin (IF-MIX)
2.00
Caution
Ground pattern board must formed wide possible minimize ground impedance.
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
TEST CIRCUIT
Signal Generator Spectrum Analyzer Signal Generator Spectrum Analyzer Signal Generator V-Di Signal Generator Spectrum Analyzer Osilloscope
maximum gain. Apply 1.0V MAX.
Osilloscope
Spectrum Analyzer measure frequency Oscilloscope measure output voltage swing
Component List
Form Chip capacitor Symbol C15, C17, C18, C16, Chip resistor Varactor Diode Chip Inductor V-Di Value (UJ) 1800 0.01 1.95 1SV285
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
PACKAGE DIMENSIONS
PLASTIC (UNIT:
6.2±0.2 4-C0.5 6.0±0.2
6.0±0.2
6.2±0.2
6.2±0.2
Pin36
Pin1
6.0±0.2
0.22±0.05
0.6±0.1
6.2±0.2 6.0±0.2
1.0MAX
0.5±0.025
Bottom View
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
NOTE CORRECT
Observe precautions handling because electro-static sensitive devices. Form ground pattern widely possible minimize ground impedance prevent abnormal oscillation). Keep track length ground pins short possible. Connect bypass capacitor (example: pin. Frequency signal input/output pins must each coupled with external capacitor cut.
RECOMMENDED SOLDERING CONDITIONS
This product should soldered under following recommended conditions. soldering methods conditions other than those recommended below, contact your sales representative.
Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: below Time: seconds less Note Count: Exposure limit None temperature: Time: seconds less (per side device) Note Exposure limit None Recommended Condition Symbol IR35-00-2
Partial Heating
Note After opening pack, keep place below allowable storage period. Caution different soldering methods together (except partial heating). details recommended soldering conditions surface mounting, refer information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
[MEMO]
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
[MEMO]
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
[MEMO]
Preliminary Data Sheet P14016EJ1V0DS00
µPB1005K
ATTENTION
OBSERVE PRECAUTIONS HANDLING
ELECTROSTATIC SENSITIVE DEVICES
NESAT (NEC Silicon Advanced Technology) trademark Corporation.
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

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