5.027 CPV362MU IGBT MODULE Features Fully isolated

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5.027 CPV362MU IGBT MODULE Features Fully isolated

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5.027
CPV362MU
IGBT MODULE
Features
Fully isolated printed circuit board mount package Switching-loss rating includes "tail" losses HEXFRED soft ultrafast diodes Optimized high operating frequency (over 5kHz) Fig. Current Frequency curve
Ultra-Fast IGBT
Product Summary
Output Current Typical Motor Drive ARMS phase (1.1 total) with 90°C, 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth (See Figure
Description
IGBT technology International Rectifier's advanced line (Insulated Metal Substrate) Power Modules. These modules more efficient than comparable bipolar transistor modules, while same time having simpler gate-drive requirements familiar power MOSFET. This superior technology been coupled state materials system that maximizes power throughput with thermal resistance. This package highly suited motor drive applications where space premium.
IMS-2
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C VISOL 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, terminal case, min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting torque, 6-32 screw.
Max.
2500 +150 (0.063 (1.6mm) from case) (0.55-0.8
Units
VRMS
Thermal Resistance
Parameter
(IGBT) (DIODE) (MODULE) Junction-to-Case, each IGBT, IGBT conduction Junction-to-Case, each diode, diode conduction Case-to-Sink,flat,greased surface Weight module
Typ.
(0.7)
Max.
Units
°C/W (oz)
Revision
C-741
Order
CPV362MU
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ ICES IGES
Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 250µA 0.69 V/°C 1.0mA 3.9A 7.2A Fig. 3.9A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 6.5A 600V 1700 600V, 150°C 8.0A Fig. 8.0A, 150°C ±500 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 0.19 0.07 0.26 0.83 Max. Units Conditions 6.5A 400V Fig. 25°C 6.5A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 0.42 150°C, Fig. 6.5A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 1.0MHz 25°C Fig. 125°C 8.0A 25°C Fig. 125°C 200V 25°C Fig. 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C
Notes: Repetitive rating; GE=20V, pulse width limited max. junction temperature. fig. VCC=80%(V CES), VGE=20V, L=10µH, fig. Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
C-742
Order
CPV362MU
utput
rren
90°C 125°C Power Factor Modulation Depth Rated Voltage
quency
Fig. Current Output Power, Synthesized Sine Wave
Collector-to-E itter urrent
Collector-to-Em itter urrent
llector-to-Em itter oltage
ate-to-E itter olta
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
C-743
Order
CPV362MU
IDTH
aximum Collector Current
ollector-to-E itter oltage
6.5A
perature
perature
Fig. Maximum Collector Current Case Temperature
Fig. Collector-to-Emitter Voltage Case Temperature
thJC
0.01 0.000
0.0001
0.001
0.01
Fig. Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-744
Order
CPV362MU
Capacitance
Cies
Coes
-to-E itter oltage
1MHz SHORTED
Cres
llector-to-Em itter oltage
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
hing
Total witching Losses
6.5A
6.5A
esistance
peratu
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Case Temperature
C-745
Order
CPV362MU
r-to itte
50°C
1000
1000
r-to itte
r-to-E itte olta
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Instantaneous Forward Current
150°C 125°C 25°C
Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
C-746
Order
CPV362MU
200V 125°C 25°C
200V 125°C 25°C
(ns)
8.0A
IRRM
8.0A 4.0A
4.0A
(A/µs)
1000
1000
(A/µs)
Fig. Typical Reverse Recovery dif/dt
Fig. Typical Recovery Current dif/dt
10000
200V 125°C 25°C
200V 125°C 25°C
di(rec)M/dt (A/µs)
(nC)
4.0A
1000
8.0A
8.0A
4.0A
(A/µs)
1000
1000
(A/µs)
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt
C-747
Order
CPV362MU
+Vge Same type device D.U.T.
430µF D.U.T.
td(off)
Eoff
t1+5µS
Fig.18a Test Circuit Measurement ILM, Eon, Eoff(diode) trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
GATE VOLTAGE D.U.T. VOLTAGE CURRENT DIODE RECOVERY WAVEFORMS td(on) DIODE REVERSE RECOVERY ENERGY
Erec
Fig. Test Waveforms Circuit Fig. 18a,
Defining td(on),
Fig. Test Waveforms Circuit Fig.18a,
Defining rec, trr, Qrr,
Refer Section following: Appendix Section page Fig. Macro Waveforms Test Circuit Fig. Fig. Clamped Inductive Load Test Circuit Fig. Pulsed Collector Current Test Circuit Package Outline IMS-2 Package pins)
C-748
Section page D-14
Order

5.027 CPV362MU IGBT MODULE Features Fully isolated

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