COMPLEMENTARY POWER DARLINGTON 2N6053 silicon epitaxial base tran
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2N6053 2N6055
COMPLEMENTARY POWER DARLINGTON
2N6053 silicon epitaxial base transistor monolithic Darlington configuration mounted Jedec TO-3 metal case. They intended power linear switching applications. complementary type 2N6055
Symbol
VCEO VCBO VEBO
Ratings
#Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous IB=0 IE=0 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055
Value
Unit
Collector Current Peak
+200 Watts
PTOT
Base Current
Total Dissipation Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS Symbol
RthJC
Ratings
Thermal Resistance, Junction Case 2N6053 2N6055
Value
1.75
Unit
°C/W
2N6053
COMSET SEMICONDUCTORS
2N6053 2N6055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
Ratings
Test Condition(s) 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055
Unit
Collector-Emitter Sustaining IC=100 Voltage Collector-Emitter Current
ICEO
VCE=30
ICEX
Collector-Cutoff Current
VCE=60 VBE=-1.5 VCE=60 VBE=-1.5 TC=150°C
IEBO
Emitter Cutoff Current
VEB=5.0 IC=4.0 VCE=3.0
Current Gain
IC=8.0 VCE=3.0
2N6053 2N6055
VCE(SAT)
Collector-Emitter saturation Voltage
IC=4.0 IB=16 IC=8.0 IB=80
2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053
VBE(SAT)
Base-Emitter Voltage
IC=8.0 IB=80
VBE(on)
Base-Emitter Voltage
IC=4.0 VCE=3.0
Transition Frequency
VCE=3.0 Vdc, IC=3.0 Adc,
Ccbo
Collector-base Capacitance
VCB=10 IE=0,
2N6055
Pulse Width Duty Cycle 2.0% types, values negative
COMSET SEMICONDUCTORS
2N6053 2N6055
MECHANICAL DATA CASE TO-3
DIMENSIONS
Case 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,77 0,04 0,16 Base Emitter Collector
Information furnished believed accurate reliable. However, assumes responsability consequences such information errors that could appear. Data subject change without notice.
COMSET SEMICONDUCTORS
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