Silicon epitaxial planar type power switching Complementary 2SB94

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Silicon epitaxial planar type power switching Complementary 2SB94

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2SD1268
Silicon epitaxial planar type
power switching Complementary 2SB943
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit:
4.2±0.2
Features
collector emitter saturation voltage VCE(sat) Satisfactory linearity foward current transfer ratio Large collector current Full-pack package which installed heat sink with screw (TC=25°C)
Ratings +150 Unit
7.5±0.2
16.7±0.3
3.1±0.1
1.4±0.1
1.3±0.2
Solder
Absolute Maximum Ratings
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
14.0±0.5
+0.2 -0.1 0.8±0.1
2.54±0.25 5.08±0.5
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) tstg Conditions 100V, 10mA, 0.1A 0.5A 0.1A 0.1A 10V, 0.5A, 10MHz 0.5A, 50mA, -50mA, 0.15 Unit
Rank classification
Rank hFE2
Note: Ordering made common rank rank 260) rank classification.
TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=100mA
2SD1268
Collector emitter saturation voltage VCE(sat)
IC/IB=20 -25°C 0.03 0.01 0.01 0.03 TC=100°C 25°C
VCE(sat)
Collector power dissipation
Collector current
50mA 30mA 25mA 20mA 10mA
Ambient temperature (°C)
Collector emitter voltage
Collector current
VBE(sat)
10000 IC/IB=20
10000 VCE=2V 3000 1000 0.01 0.03
VCE=10V f=10MHz TC=25°C
Base emitter saturation voltage VBE(sat)
Forward current transfer ratio
0.03 0.01 0.01 0.03 25°C TC=-25°C 100°C
1000 0.01 0.03
TC=100°C 25°C -25°C
Transition frequency (MHz)
3000
Collector current
Collector current
Collector current
10000 IE=0 f=1MHz TC=25°C
ton, tstg,
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25°C
Area safe operation (ASO)
repetitive pulse TC=25°C
Collector output capacitance (pF)
3000 1000
Switching time ton,tstg,tf (µs)
Collector current
0.03 0.01
0.03 0.01 10ms t=0.5ms
tstg
1000
Collector base voltage
Collector current
Collector emitter voltage

Silicon epitaxial planar type power switching Complementary 2SB94

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