Silicon epitaxial planer transistor (Tr1) Silicon epitaxial planer tra

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Silicon epitaxial planer transistor (Tr1) Silicon epitaxial planer tra

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XP1B301
Silicon epitaxial planer transistor (Tr1) Silicon epitaxial planer transistor (Tr2)
2.1±0.1 0.425 1.25±0.1 0.425
0.65
0.65
elements incorporated into package. (Tr1 emitter connected base.) Reduction mounting area assembly cost half.
2.0±0.1
Features
0.9±
Basic Part Number Element
2SB709A+2SD601A
0.7±0.1
0.12 0.02
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Collector current Peak collector current Collector base voltage Collector emitter voltage Emitter base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO VCBO VCEO VEBO Tstg
(Ta=25°C)
Ratings -100 -200 +150 Unit
Base (Tr1) Base (Tr2) Emitter (Tr1)
Emitter (Tr2) Collector (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
+0.05
0.2±0.05
general amplification
XP1B301
(Ta=25°C)
Symbol VCBO VCEO VEBO ICBO ICEO VCE(sat) Conditions -10µA, -2mA, -10µA, -20V, -10V, -10V, -2mA -100mA, -10mA -10V, 1mA, 200MHz -10V, 1MHz -100 Unit
Electrical Characteristics
Parameter
Collector base voltage Collector emitter voltage Emitter base voltage Collector cutoff current Forward current transfer ratio Collector emitter saturation voltage Transition frequency Collector output capacitance
Parameter Symbol VCBO VCEO VEBO ICBO ICEO VCE(sat) Conditions 10µA, 2mA, 10µA, 20V, 10V, 10V, 100mA, 10mA 10V, -2mA, 200MHz 10V, 1MHz Unit
Collector base voltage Collector emitter voltage Emitter base voltage Collector cutoff current Forward current transfer ratio Collector emitter saturation voltage Transition frequency Collector output capacitance
Common characteristics chart
XP1B301
Total power dissipation (mW)
Ambient temperature (°C)
Characteristics charts
Ta=25°C IB=-300µA VCE= Ta=25°C
-400 -350
VCE= Ta=25°C
Collector current (mA)
Collector current (mA)
-250µA -200µA
Base current (µA)
-300 -250 -200 -150 -100
-150µA
-100µA
-50µA
-100 -200 -300 -400
-0.4 -0.8 -1.2 -1.6
Collector emitter voltage
Base current (µA)
Base emitter voltage
-240
VCE(sat)
Collector emitter saturation voltage VCE(sat)
VCE=-5V IC/IB=10
VCE=-10V
-200
25°C Ta=75°C -25°C
-0.3 -25°C -0.1 -0.03 -0.01 Ta=75°C 25°C
Forward current transfer ratio
Collector current (mA)
-160
Ta=75°C 25°C -25°C
-120
-0.003 -0.001
-0.4 -0.8 -1.2 -1.6 -2.0
-100 -300 -1000
-100 -300 -1000
Base emitter voltage
Collector current (mA)
Collector current (mA)
XP1B301
f=1MHz IE=0 Ta=25°C
VCB=-5V f=1kHz Rg=2k Ta=25°C
Collector output capacitance (pF)
Transition frequency (MHz)
VCB=-10V Ta=25°C
Noise figure (dB)
-100
0.01 0.03
Emitter current (mA)
Collector base voltage
Emitter current (mA)
VCB=-5V Rg=50k Ta=25°C
Parameter
Parameter
IE=2mA f=270Hz Ta=25°C
Noise figure (dB)
1kHz 10kHz
VCE= f=270Hz Ta=25°C
Parameter
f=100Hz
(µS)
Parameter
(µS)
Emitter current (mA)
Emitter current (mA)
Collector emitter voltage
Characteristics charts
Ta=25°C IB=160µA 1000 1200 VCE=10V Ta=25°C
VCE=10V
Collector current (mA)
Base current (µA)
140µA 120µA 100µA 80µA 60µA 40µA 20µA
Collector current (mA)
Ta=75°C
25°C
-25°C
Collector emitter voltage
Base emitter voltage
Base emitter voltage
VCE=10V Ta=25°C
XP1B301
VCE(sat)
IC/IB=10
VCE=10V
Collector emitter saturation voltage VCE(sat)
25°C 0.03 0.01 Ta=75°C -25°C
Forward current transfer ratio
Collector current (mA)
Ta=75°C 25°C
-25°C
1000
Base current (µA)
Collector current (mA)
Collector current (mA)
VCB=10V Ta=25°C
VCE=10V GV=80dB Function=FLAT Ta=25°C
Transition frequency (MHz)
Noise voltage (mV)
Rg=100k
4.7k
-0.1 -0.3
-100
1000
Emitter current (mA)
Collector current (µA)

Silicon epitaxial planer transistor (Tr1) Silicon epitaxial planer tra

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