Features on-resistance High speed switching drive current seconda

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Features on-resistance High speed switching drive current seconda

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2SK740
Features
on-resistance High speed switching drive current secondary breakdown Suitable switching regulator, DC-DC converter motor driver
Outline
TO-220AB
Gate Drain (Flange) Source
2SK740
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C Symbol VDSS VGSS D(pulse)* Pch* Tstg
Ratings +150
Unit
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS 0.12 1200 0.15 Unit diF/dt A/µs Test conditions ±100
Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss d(on) d(off)
2SK740
Power Temperature Derating Channel Dissipation Maximum Safe Operation Area
Drain Current
Operation this area limited (on)
25°C Case Temperature (°C)
1,000 Drain Source Voltage
Typical Output Characteristics Drain Current Pulse Test Drain Current
Typical Transfer Characteristics -25°C Pulse Test 75°C 25°C
Drain Source Voltage
Gate Source Voltage
2SK740
Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage (on) PulseTest Static Drain Source State Resistance (on) Static Drain Source State Resistance Drain Current
0.05 Pulse Test
Gate Source Voltage
0.02 0.01 0.005
Drain Current
Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Pulse Test Forward Transfer Admittance
Forward Transfer Admittance Drain Current
Pulse Test -25°C 25°C 75°C
Case Temperature (°C)
Drain Current
2SK740
Body Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) 10,000 Typical Capacitance Drain Source Voltage Ciss 1,000 Coss
di/dt A/µs 25°C Pulse Test Capacitance (pF)
Crss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage
Switching Characteristics 2µs, duty
Switching Time (ns)
(off) (on)
Gate Charge (nc)
Drain Current
2SK740
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width
25°C
0.05 0.02
0.03 0.01
ch-c ch-c ch-c 2.5°C/W, 25°C Pulse Width
Switching Time Test Circuit Monitor Vout Monitor D.U.T Vout (on) (off) Wavewforms
Unit:
11.5 2.79 10.16 -0.08
+0.1
4.44 1.26 0.15
+0.2 -0.1
18.5
15.0
1.27
14.0
0.76
2.54
2.54
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-220AB Conforms Conforms
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1999. rights reserved. Printed Japan.

Features on-resistance High speed switching drive current seconda

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