TM2541B-L, TM2561B-L qRepetitive peak off-state voltage: VDRM=400

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TM2541B-L, TM2561B-L qRepetitive peak off-state voltage: VDRM=400

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TO-3PF Triac
TM2541B-L, TM2561B-L
qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=25A qGate trigger current: IGT=30mA (MODE qIsolation voltage: VISO=2000V(AC, 1min.) approved type available
5.45± 15.6±
External Dimensions
(Unit:
3.2± 5.5± 9.5±
5.5± 3.45±
3.35±
+0.2 1.75-0.1 +0.2 2.15 -0.1 +0.2 1.05-0.1 5.45±
(16.2) +0.2 0.65-0.1
(1). Terminal (T1) (2). Terminal (T2) (3). Gate
Part Number Number
Weight: Approx. 6.5g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM IT(RMS) ITSM PG(AV) Tstg VISO
Ratings
TM2541B-L +125 +125 2000 TM2561B-L
Unit
Vrms
Conditions
RGK= -40°C +125°C Conduction angle 360°, Tc=84°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 50Hz, duty 50Hz, duty 50Hz, duty
50Hz Sine wave, RMS, Terminal Case, min.
sElectrical Characteristics
Parameter
Off-state current On-state voltage
Symbol
IDRM V
Ratings
Unit
Conditions
VD=VDRM, RGK= Tj=125°C
VD=VDRM, RGK= Tj=25°C ITM=20A, TC=25°C
VD=6V, RL=10, TC=25°C
Gate trigger voltage
VD=6V, RL=10, TC=25°C V/µs °C/W Tj=125°C Tj=25°C VD=400V, Tj=125°C Junction case
Gate trigger current
Gate non-trigger voltage Holding current Rate-of-rise off-state commutation voltage Thermal resistance
(dv/dt)c
TM2541B-L, TM2561B-L
Characteristics (max)
Surge on-state current ITSM
ITSM Ratings
Initial junction temperature Tj=125°C ITSM 1cycle
IT(RMS) PT(AV) Characteristics
Full-cycle sinewave
Average on-state power PT(AV)
Conduction angle :360°
=125°C
On-state current
=25°C
On-state voltage
Number cycle
on-state current IT(RMS)
IT(RMS) Ratings
Full-cycle sinewave Conduction angle :360°
Gate Characteristics
Mode
temperature characteristics
(Typical)
Gate trigger voltage
Case temperature (°C)
on-state current IT(RMS)
=10V =0.5W -40°C VGT=2.3V -40°C IGT=75mA 25°C IGT=30mA 25°C VGT=2V PG(AV) =0.5W
Gate voltage
VGD=0.2V 1000 10000
Gate current
(mA)
Junction temperature (°C)
temperature characteristics
(Typical)
Gate trigger current (mA) Mode
rth( j-c) Characteristics
Transient thermal resistance (j-c) (°C/W)
Junction temperature (°C)
Time (ms)

TM2541B-L, TM2561B-L qRepetitive peak off-state voltage: VDRM=400

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