Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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XP1210
Silicon epitaxial planer transistor
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 0.02
+0.05
switching/digital circuits
0.65
Features
elements incorporated into package. (Emitter-coupled transistors with built-in resistor) Reduction mounting area assembly cost half.
2.0±0.1
0.65
0.9±
Basic Part Number Element
UN1210 elements
Base (Tr1) Emitter Base (Tr2)
0.7±0.1
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Rating Collector emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO Tstg
(Ta=25°C)
Ratings +150 Unit
Collector (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector base voltage Collector emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Output voltage high level Output voltage level Transition frequency Input resistance Ratio between elements
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO (small/large)* VCE(sat) Conditions 10µA, 2mA, 50V, 50V, 10V, 10V, 10mA, 0.3mA 0.5V, 2.5V, 10V, -2mA, 200MHz -30% +30% 0.99 0.25 0.01 Unit
XP1210
Total power dissipation (mW)
Ambient temperature (°C)
VCE(sat)
IC/IB=10 VCE=10V
Collector emitter saturation voltage VCE(sat)
Ta=75°C 25°C 0.03 0.01 -25°C
Forward current transfer ratio
IB=1.0mA 0.9mA 0.8mA
Ta=25°C
Ta=75°C 25°C -25°C
Collector current (mA)
0.4mA 0.5mA 0.6mA 0.7mA 0.1mA
0.3mA
1000
Collector emitter voltage
Collector current
(mA)
Collector current (mA)
f=1MHz IE=0 Ta=25°C 10000 3000 VO=5V Ta=25°C
VO=0.2V Ta=25°C
Collector output capacitance (pF)
Output current (µA)
Input voltage
1000
0.03 0.01
Collector base voltage
Input voltage
Output current (mA)

Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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