Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425
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XP1501
Silicon epitaxial planer transistor
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 0.02
+0.05
general amplification
0.65
Features
elements incorporated into package. (Emitter-coupled transistors) Reduction mounting area assembly cost half.
2.0±0.1
0.65
0.9±
2SD601A elements
0.7±0.1
Basic Part Number Element
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Collector emitter voltage Rating Emitter base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
(Ta=25°C)
Ratings +150 Unit
Base (Tr1) Emitter Base (Tr2)
Collector (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Collector cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol VCBO VCEO VEBO ICBO ICEO (small/large)*1 VCE(sat) Conditions 10µA, 2mA, 10µA, 20V, 10V, 10V, 10V, 100mA, 10mA 10V, -2mA, 200MHz 10V, 1MHz 0.99 Unit
Ratio between elements
Ta=25°C IB=160µA
XP1501
1200 VCE=10V Ta=25°C 1000
Total power dissipation (mW)
Collector current (mA)
Base current (µA)
140µA 120µA 100µA 80µA 60µA 40µA 20µA
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE=10V
VCE=10V Ta=25°C
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=10
0.03 0.01 25°C Ta=75°C
Collector current (mA)
Collector current (mA)
Ta=75°C
25°C
-25°C
-25°C
1000
Base emitter voltage
Base current
(µA)
Collector current (mA)
VCE=10V
VCB=10V Ta=25°C
VCE=10V GV=80dB Function=FLAT Ta=25°C
Forward current transfer ratio
Transition frequency (MHz)
Ta=75°C 25°C
Noise voltage (mV)
-25°C
Rg=100k
4.7k
-0.1 -0.3
-100
1000
Collector current (mA)
Emitter current (mA)
Collector current (µA)
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