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Bulletin I25167/B ST110S SERIES PHASE CONTROL THYRISTORS Stu


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Bulletin I25167/B
ST110S SERIES
PHASE CONTROL THYRISTORS Stud Version
Features
Center gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal 1200V) International standard case TO-209AC (TO-94) Threaded studs 20UNF2A Compression Bonded Encapsulation heavy duty operations such severe thermal cycling
110A
Typical Applications
motor controls Controlled power supplies controllers
Major Ratings Characteristics
Parameters
IT(AV) IT(RMS) ITSM 50Hz 60Hz 50Hz 60Hz typical
ST110S
2700 2830 36.4 33.2 1600
Units
KA2s KA2s
case style TO-209AC (TO-94)
Order
ST110S Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code
ST110S
RRM, max. repetitive peak off-state voltage
1200 1400 1600
VRSM maximum nonrepetitive peak voltage
1300 1500 1700
IDRM max.
On-state Conduction
Parameter
T(AV) Max. average on-state current Case temperature T(RMS) Max. on-state current Max. peak, one-cycle non-repetitive surge current
ST110S
2700 2830 2270 2380
Units Conditions
85°C case temperature 10ms 8.3ms 10ms 8.3ms 10ms KA2s 8.3ms 10ms 8.3ms
180° conduction, half sine wave
voltage reapplied 100% VRRM reapplied voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial max.
Maximum fusing
36.4 33.2 25.8 23.5
Maximum fusing
0.90
10ms, voltage reapplied (16.7% IT(AV) IT(AV) max.
T(TO)1 level value threshold voltage T(TO)2 High level value threshold voltage level value on-state slope resistance High level value on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
0.92 IT(AV)),TJ max. (16.7% IT(AV) IT(AV) max. 1.81 1.52 1000 25°C, anode supply resistive load IT(AV) ),TJ max. Ipk= 350A, max, 10ms sine pulse
1.79
Switching
Parameter
di/dt Max. non-repetitive rate rise turned-on current Typical delay time Typical turn-off time A/µs
ST110S
Units Conditions
Gate drive 20V, max, anode voltage VDRM Gate current 1A/µs 0.67% VDRM, 25°C 100A, max, di/dt 10A/µs, dv/dt 20V/µs, Gate 100, 500µs
Order
ST110S Series
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate rise Max. peak reverse off-state leakage current
ST110S
off-state voltage
Units Conditions
V/µs max. linear rated VDRM max, rated DRM/V applied
Triggering
Parameter
+VGM -VGM Maximum peak gate power
ST110S
Units Conditions
max, max, 50Hz, max,
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. gate current required trigger gate voltage required trigger gate current trigger gate voltage trigger
MAX. 0.25
max,
40°C 25°C 125°C 40°C 25°C 125°C Max. gate current/ voltage trigger max. value which will trigger unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage lowest value which will trigger units anode-to-cathode applied
Thermal Mechanical Specification
Parameter
Tstg Max. operating temperature range Max. storage temperature range
ST110S
0.195
Units Conditions
RthJC Max. thermal resistance, junction case RthCS Max. thermal resistance, case heatsink Mounting torque,
operation
0.08 15.5 (137) (120)
Mounting surface, smooth, flat greased lubricated threads (lbf-in) Lubricated threads
Approximate weight Case style
Outline Table
209AC (TO-94)
Order
ST110S Series
RthJC Conduction
(The following table shows increment thermal resistence RthJC when devices operate different conduction angles than
Conduction angle
180° 120°
Sinusoidal conduction Rectangular conduction Units
0.035 0.041 0.052 0.076 0.126 0.025 0.042 0.056 0.079 0.127
Conditions
max.
Ordering Information Table
Device Code
Thyristor Essential part number Converter grade Compression bonding Stud Voltage code: Code VRRM (See Voltage Rating Table) Stud base 20UNF threads Eyelet terminals (Gate Auxiliary Cathode Leads) Fast terminals (Gate Auxiliary Cathode Leads) Flag terminals (For Cathode Gate Terminals)
Glass-metal seal (only 1200V) None Ceramic housing (over 1200V)
Critical dv/dt: None 500V/µsec (Standard value) 1000V/µsec (Special selection)
Order
ST110S Series
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX. (0.33) DIA. (0.17) (0.10) MAX.
(.025 s.i.) SILICON RUBBER (6.69) (6.18) CATHODE WHITE GATE C.S. (.0006 s.i.)
C.S. 16mm
FLEXIBLE LEAD
Fast-on Terminals AMP. 280000-1 REF-250
(2.75) MIN.
(8.46) SHRINK (1.14) MAX. WHITE SHRINK 12.5 (0.49) MAX.
(0.39)
23.5 (0.93) MAX. DIA.
(0.83)
MAX.
1/2"-20UNF-2A 29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
dimensions millimeters (inches)
CERAMIC HOUSING
16.5 (0.65) MAX.
(0.3
(0.33) DIA. (0.17)
(0.10) MAX.
C.S. 16mm SILICON RUBBER (6.18) (6.69) CATHODE WHITE GATE C.S. (.0006 s.i.) (.025 s.i.)
(8.46) (2.75) MIN. SHRINK (1.14) MAX. WHITE SHRINK
(0.39)
22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX.
(0.83)
MAX.
1/2"-20UNF-2A 29.5 (1.16)
Order
MAX.
FLEXIBLE LEAD
ST110S Series
Outline Table
GLASS-METAL SEAL FLAG TERMINALS
23.5 DIA. (0.93) MAX. (0.06) DIA.
(0.20) DIA.
(1.81)
(1.93)
(0.39)
(1.14) MAX.
(0.30)
12.5 (0.49)
21(0.83)
MAX.
MAX.
1/2"-20UNF-2A
(0.65)
16.5
(0.09) 29.5 (1.16)
CERAMIC HOUSING FLAG TERMINALS
22.5 DIA. (0.89) MAX. (0.06) DIA. (0.39) (0.20) DIA.
(0.39)
Case Style TO-208AD (TO-83)
dimensions millimeters (inches)
(1.81)
(1.93)
(0.30)
12.5 (0.49)
21(0.83)
MAX.
MAX.
1/2"-20UNF-2A
(1.14) MAX.
(0.09)
Order
29.5 (1.16)
(0.65)
16.5
(0.39)
ST110S Series
Maximum Allowab Case emperature (°C)
Maximum Allowable emperature (°C)
110S eries RthJC (DC) 0.195
110SS eries RthJC (DC) 1.95
Conduction Angle
Conduction Period
120° 180°
120°
180°
Averag On-state Current Fig. Current Ratings Characteristics Maximum Average On-state Power Loss
Conduction Angle
Average On-s tate Current Fig. Current Ratings Characteristics
180° 120° RMSLimit
Avera On-state Current Maximum Allowable Ambient emperature (°C) 110SS eries 125°C
Fig. On-state Power Loss Characteristics Maximum Average On-s tate Power Limit Average On-s tate Current Maximum Allowable ient emperature (°C) 110SS eries 125°C
Conduction Period
180° 120°
Fig. On-state Power Loss Characteristics
Order
ST110S Series
Peak Half On-state Current
Peak Half Wave On-s tate Current
2400 2200 2000 1800 1600 1400 1200 1000
ated Load Condition With ated lied Following urge. Initial 125°C 0.0083 0.0100
2800
Maximum epetitive urge Current Vers Pulse rain Duration. Control 2600 Conduction Maintained. 2400 Initial 125°C Voltage Reapplied 2200 ated VRRMReapplied 2000 1800 1600 1400 1200 1000 0.01 110S eries
110S eries
Number Equal Amplitude Half Cycle Current Pulses
Pulse rain Duration Fig. Maximum Non-Repetitive Surge Current
Fig. Maximum Non-Repetitive Surge Current 10000 ntaneous On-s tate Current
25°C 1000 125°C
110S eries
tantaneous On-state Voltage Fig. On-state Voltage Drop Characteristics nsie Therma thJC thJC 0.195 tion)
0.01 ST110S
0.001 0.001
0.01
Pulse Duration
Fig. Thermal Impedance ZthJC Characteristic
Order
ST110S Series
Instantaneous Gate Voltage
ectangular gate pulse Recommended load line rated 20V, 10ohms; tr<=1 ommended load line <=30% rated di/dt 10V, 10ohms tr<=1
j=-40
10W, 20W, 40W, 60W,
0.66ms
j=25
j=125
0.001 0.01
Device: 110SS eries
requenc Limited PG(AV)
tantaneous Gate Current Fig. Gate Characteristics
Order

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