Bulletin I25185/B ST083S SERIES INVERTER GRADE THYRISTORS St

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Bulletin I25185/B ST083S SERIES INVERTER GRADE THYRISTORS St

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Bulletin I25185/B
ST083S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability thermal impedance High speed performance
Typical Applications
Inverters Choppers Induction heating types force-commutated converters
Major Ratings Characteristics
Parameters
IT(AV) IT(RMS) ITSM 50Hz 60Hz 50Hz 60Hz DRM/V range
ST083S
2450 2560 1200
Units
KA2s KA2s
case style TO-209AC (TO-94)
20µs 800V devices 30µs 1000 1200V devices
Order
ST083S Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
ST083S
DRM/V maximum repetitive peak voltage
1000 1200
VRSM maximum non-repetitive peak voltage
1100 1300
DRM/I max.
max.
Current Carrying Capability
Frequency
180o 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Voltage before turn-on Rise on-state current di/dt Case temperature Equivalent values circuit
I180o
I100µs 2540 1190 VDRM
I
Units
1930 A/µs
0.15µF
0.15µF
0.15µF
On-state Conduction
Parameter
T(AV) Max. average on-state current Case temperature T(RMS) Max. on-state current Max. peak, half cycle, non-repetitive surge current
ST083S
2450 2560 2060 2160
Units Conditions
77°C case temperature 10ms 8.3ms 10ms 8.3ms 10ms 8.3ms KA2s 10ms 8.3ms
180° conduction, half sine wave
voltage reapplied 100% VRRM reapplied voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial
Maximum fusing
Maximum fusing
10ms, voltage reapplied
Order
ST083S Series
On-state Conduction
Parameter
T(TO)1 Max. peak on-state voltage level value threshold voltage
ST083S
2.15 1.46 1.52 2.32
Units
Conditions
ITM= 300A, max, 10ms sine wave pulse
(16.7% IT(AV) T(AV)), max. IT(AV) max. (16.7% IT(AV) T(AV)), max. IT(AV)), max.
T(TO)2 High level value threshold voltage level value forward slope resistance High level value forward slope resistance Maximum holding current Typical latching current
2.34 1000
25°C, 25°C, 12V,
Switching
Parameter
di/dt Max. non-repetitive rate rise turned-on current Typical delay time
ST083S
1000 0.80
Units
A/µs
Conditions
max, VDRM rated VDRM di/dt 25°C, rated VDRM, Resistive load, Gate pulse: 10V, source max, 100A, commutating di/dt 10A/µs 50V, 200µs, dv/dt: table device code
Max. turn-off time
20µs 800V devices; 30µs 1000 1200V devices.
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate rise off-state voltage Max. peak reverse off-state leakage current
ST083S
Units
Conditions
max., linear VDRM, higher value available request max, rated applied
Triggering
Parameter
Maximum peak gate power
ST083S
Units
Conditions
max, 50Hz, max,
PG(AV) Maximum average gate power +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. gate current required trigger Max. gate voltage required trigger Max. gate current trigger Max. gate voltage trigger
0.25
max,
25°C, 12V, max, rated VDRM applied
Order
ST083S Series
Thermal Mechanical Specifications
Parameter
Tstg RthJC RthCS Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction case Max. thermal resistance, case heatsink Mounting torque,
ST083S
0.195 0.08 15.5 (137) (120)
Units
Conditions
operation (Ibf-in) (Ibf-in) Outline Table lubricated threads Lubricated threads Mounting surface, smooth, flat greased
Approximate weight Case style
TO-209AC (TO-94)
RthJC Conduction
(The following table shows increment thermal resistence RthJC when devices operate different conduction angles than
Conduction angle
180° 120°
Sinusoidal conduction
0.034 0.041 0.052 0.076 0.126
Rectangular conduction Units
0.025 0.042 0.056 0.079 0.127
Conditions
max.
Ordering Information Table
Device Code
Thyristor Essential part number Fast turn Compression bonding Stud Voltage code: Code VRRM (See Voltage Ratings Table) Stud Base 1/2" 20UNF Reapplied dv/dt code (for Test Condition) code Eyelet terminals (Gate Aux. Cathode Leads) Fast-on terminals (Gate Aux. Cathode Leads) Flag terminals (For Cathode Gate Terminals) dv/dt combinations available
dv/dt (V/µs) 800V (µs) only 1000/1200V *Standard part number. other types available (µs)
Critical dv/dt: None 500V/µsec (Standard value) 1000V/µsec (Special selection)
Order
only request.
ST083S Series
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
(0.33) DIA. (0.17)
(0.10) MAX.
FLEXIBLE LEAD C.S. 16mm (.025 s.i.)
SILICON RUBBER (6.18) (6.69) CATHODE
C.S. (.0006 s.i.)
WHITE GATE
Fast-on Terminals AMP. 280000-1 REF-250
(8.46) (2.75) MIN. SHRINK (1.14) MAX. WHITE SHRINK
(0.39)
22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX.
(0.83)
MAX.
1/2"-20UNF-2A 29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
dimensions millimeters (inches)
CERAMIC HOUSING FLAG TERMINALS
22.5 DIA. (0.89) MAX. (0.06) DIA. (0.39) (0.20) DIA.
(1.81)
(1.93)
(0.30)
12.5 (0.49)
21(0.83)
MAX.
Case Style TO-208AD (TO-83)
dimensions millimeters (inches)
MAX.
1/2"-20UNF-2A
(1.14) MAX.
(0.09) 29.5 (1.16)
Order
(0.65)
16.5
(0.39)
ST083S Series
Maximum Allowable Case emperature (°C)
Maximum Allowable Case emperature (°C)
083S eries RthJC (DC) 0.195
083S eries RthJC (DC) 0.195
Conduc tion Angle
Conduction Period
Average On-state Current Fig. Current Ratings Characteristics 120° 180°
120° 180°
Average On-s tate Current Fig. Current Ratings Characteristics Maximum Average On-state Power
180° 120° Limit
Conduction Angle
083S eries 125°C
Average On-s tate Current
Maximum Allowable Ambient emperature (°C)
Fig. On-state Power Loss Characteristics Maximum Average On-s tate Power 180° 120°
Limit
Conduction Period
083S eries 125°C
Average On-s tate Current Maximum Allowable Ambient emperature (°C)
Fig. On-state Power Loss Characteristics
Order
ST083S Series
Peak Half Wave On-state Current
2000 1800 1600 1400 1200 1000
Rated Load Condition With Rated Applied ollowing urge. Initial 125°C 0.0083 0.0100
Peak Half Wave On-s tate Current
2200
2600
Maximum epetitive urge Current Vers Pulse rain Duration. Control 2400 Conduction Maintained. Initial 125°C 2200 Voltage eapplied ated 2000 eapplied 1800 1600 1400 1200 083S eries
083S eries
1000 0.01
Puls rain Duration
Number Equal Amplitude Current Pulses
Fig. Maximum Non-repetitive Surge Current rans ient Thermal Impedanc thJC (K/W) 10000 Instantaneous On-state Current
Fig. Maximum Non-repetitive Surge Current teady tate Value RthJC 0.195 Operation)
25°C 1000 125°C
T083SS eries
083S eries
Instantaneous On-state Voltage Fig. On-state Voltage Drop Characteristics Maximum evers ecovery Charge (µC)
0.01 0.001
0.01
quare Wave Puls Duration Fig. Thermal Impedance thJC Characteristic Maximum Revers overy Current 083SS eries
083S eries
Fall On-s tate Current di/d Fig. Reverse Recovered Charge Characteristics
Order
orward Current (A/µs) Fig. Reverse Recovery Current Characteristics
ST083S Series
Peak On-s Current
circuit ohms 0.15 VDRM
nubb circ ohms 0.15 80%VDR
1500 1000 2000 2500 3000 1500 2000 2500 083SS eries inusoidal pulse 60°C 3000 083SS eries inusoidal pulse 85°C 1000
1E1E1
Puls Basewidth (µs) Fig. Frequency Characteristics
ircuit ohms 0.15 VDRM
Pulse sewid (µs)
Peak On-state Current
083SS eries rapezoidal ulse 85°C di/dt 50A/µs
nubber circuit ohms 0.15 VDRM
1000 1500 083SS eries rapezoid pulse 60°C 50A/ 2000 2500
1500
1000
3000
2000 2500
41E1
Pulse ewidth Fig. Frequency Characteristics
nubber circuit ohms 0.15 VDRM
Pulse Basewidth (µs)
On-s Current
083SS eries rapezoidal pulse 85°C 100A/
nubber circuit ohms 0.15 VDRM
1000 083SS eries rapezoidal pulse 60°C di/dt 100A/ 1500 2000 2500
1000 1500 2000 2500 3000
1E1E1
Puls Basewidth (µs) Fig. Frequency Characteristics
Puls ewidth
Order
ST083S Series
joules pulse 083SS eries ectangular pulse 50A/ joules pulse 083SS eries inusoidal pulse
Peak On-state Current
Puls Basewidth (µs)
Puls ewidth (µs)
Fig. Maximum On-state Energy Power Loss Characteristics Insta Volta ulse line rate 20V, hms; tr<=1 mend line <=30% 10V, 10ohm tr<=1
j=-40 j=25 j=125
10W, 20W, 40W, 60W,
20ms 10ms 3.3m
0.001 0.01
Devic T083S Series
Freq uenc ited PG(AV)
Inst urrent Fig. Gate Characteristics
Order

Bulletin I25185/B ST083S SERIES INVERTER GRADE THYRISTORS St

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