CHANNEL 300V 0.75 DPAK PowerMESHMOSFET TYPE D5NB30 DS(on)

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CHANNEL 300V 0.75 DPAK PowerMESHMOSFET TYPE D5NB30 DS(on)

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STD5NB30
CHANNEL 300V 0.75 DPAK PowerMESHMOSFET
TYPE D5NB30
DS(on)
TYPICAL RDS(on) 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED SUFFIX "T4" ORDERING TAPE REEL
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE
DPAK TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor dv/dt( Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value 0.44
A/µs, V(BR)DSS, TJMAX
V/ns
Pulse width limited safe operating area
August 1999
STD5NB30
THERMAL DATA
-case
Rthj -amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
2.27
oC/W
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions =2.5 Min. Typ. 0.75 Max. Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. Max. Unit
STD5NB30
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on delay Time Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions (see test circuit, figure Min. Typ. Max. Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 11.5 di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area
Thermal Impedance
STD5NB30
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STD5NB30
Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STD5NB30
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STD5NB30
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD5NB30
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD5NB30
Information furnished believed accurate reliable. However, STMicroelect onics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specific ation mentioned this publication subjec change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysi Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

CHANNEL 300V 0.75 DPAK PowerMESHMOSFET TYPE D5NB30 DS(on)

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