Feature N-Channel Enhancement mode Logic Level dv/dt rated Drain
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SN7002W SIPMOS® Small-Signal-Transistor
Feature N-Channel Enhancement mode Logic Level dv/dt rated
Drain Gate pin1 Source
Product Summary RDS(on) 0.23
SOT-323
Type SN7002W SN7002W
Package SOT-323 SOT-323
Ordering Code Q67042-S4186 Q67042-S4193
Tape Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel
Marking
Maximum Ratings, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol
Value 0.23 0.18
Unit
Pulsed drain current
TA=25°C
puls dv/dt Ptot Tstg
0.92 Class -55. +150 55/150/56 kV/µs
Reverse diode dv/dt
IS=0.23A, =48V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage Sensitivity (HBM) MIL-STD Power dissipation
TA=25°C
Operating storage temperature climatic category; 68-1
Page
2003-04-03
SN7002W
Thermal Characteristics Parameter Characteristics Thermal resistance, junction ambient minimal footprint RthJS Symbol min. Values typ. max. Unit
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID=250µA
Symbol min. V(BR)DSS VGS(th) RDS(on) RDS(on)
Values typ. max.
Unit
Gate threshold voltage,
ID=26µA
Zero gate voltage drain current
VDS=60V, Tj=25°C VDS=60V, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.2A
Drain-source on-state resistance
VGS=10V, ID=0.23A
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2003-04-03
SN7002W
Electrical Characteristics, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
=48V, =0.23A, =48V, =0.23A
Symbol
Conditions min.
Values typ. 0.21 max. 12.75
Unit
td(on) td(off)
VDS2*ID*RDS(on)max, ID=0.18A VGS=0, VDS=25V, f=1MHz
VDD=30V, VGS=10V, ID=0.23A,
0.11 0.42
0.17 0.63
V(plateau) =48V, 0.23
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge
VGS=0, IF=0.23A VR=30V, diF/dt=100A/µs
TA=25°C
0.85 10.8
0.23 0.92 16.2
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2003-04-03
SN7002W
Power dissipation Ptot (TA)
0.55
SN7002W
Drain current (TA) parameter:
0.26
SN7002W
0.45
0.22
0.18
Ptot
0.35 0.25 0.15
0.16 0.14 0.12 0.08 0.06
0.05
0.04 0.02
Safe operating area parameter
SN7002W
Transient thermal impedance ZthJA parameter
SN7002W
25.0µs
ZthJA
0.50
0.20 0.10
0.05 single pulse 0.02 0.01
Page
2003-04-03
SN7002W
Typ. output characteristic (VDS) parameter:
Typ. drain-source resistance RDS(on) (ID) parameter:
4.5V 3.7V 3.5V 3.0V
5.25 3.75
3.1V 3.5V 3.7V 4.1V 4.5V
2.25 0.75
RDS(on)
Typ. transfer characteristics RDS(on)max parameter:
Typ. forward transconductance f(ID) parameter:
0.15
0.05
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2003-04-03
SN7002W
Drain-source on-state resistance RDS(on) parameter 0.23
SN7002W
Typ. gate threshold voltage VGS(th) parameter: =26µA
RDS(on)
VGS(th)
typ.
Typ. capacitances (VDS) parameter: MHz,
Forward character. reverse diode (VSD) parameter:
SN7002W
Ciss
Coss
Crss
(98%) (98%)
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2003-04-03
SN7002W
Typ. gate charge (QG); parameter: 0.16 pulsed,
SN7002W SN7002W
Drain-source breakdown voltage V(BR)DSS
V(BR)DSS
Page
2003-04-03
SN7002W
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
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2003-04-03
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