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15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs These N-Channel enh


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RFP15N15
15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs
These N-Channel enhancement mode silicon gate power field effect transistors designed applications such switching regulators, switching converters, motor drivers, relay drivers drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA09195.
Features
15A, 150V rDS(ON) 0.150 Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER RFP15N15
PACKAGE TO-220AB
BRAND RFP15N15
NOTE: When ordering, entire part number.
Packaging
JEDEC TO-220AB
DRAIN (TAB)
SOURCE DRAIN GATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP15N15
Absolute Maximum Ratings 25oC, Unless Otherwise Specified
RFP15N15 Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note .VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA Rated BVDSS, Rated BVDSS, 125oC 75V, 7.5A, 9.9, (Figures ±100 0.150 2.25 1700 1.67 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Drain Source Voltage (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case
IGSS rDS(ON) VDS(ON) CISS COSS CRSS td(ON) td(OFF)
±20V, 15A, (Figures 15A, 25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETERS Source Drain Diode Voltage (Note Reverse Recovery Time NOTES: Pulse test: width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL TEST CONDITIONS 7.5A dISD/dt 100A/µs UNITS
RFP15N15 Typical Performance Curves Unless Otherwise Specified
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
25oC CURVE MUST DERATED LINEARLY WITH INCREASE TEMPERATURE DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 25oC
DRAIN CURRENT
OPERATION THIS AREA LIMITED rDS(ON)
3.6V
VDS, DRAIN SOURCE
1000
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
-40oC 125oC 125oC
rDS(ON), DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE
0.30
25oC
PULSE DURATION 80µs 0.25 DUTY CYCLE 0.20 0.15
125oC
25oC
RATURE CASE TEMPE
-40oC
0.10 0.05
-40oC
VGS, GATE SOURCE VOLTAGE
DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
RFP15N15 Typical Performance Curves Unless Otherwise Specified
rDS(ON), NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs NORMALIZED GATE THRESHOLD VOLTAGE
(Continued)
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1600 VDS, DRAIN SOURCE VOLTAGE 1400 CISS CAPACITANCE (pF) 1200 1000 VDS, DRAIN SOURCE VOLTAGE COSS CRSS 1MHz CISS CRSS COSS
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
112.5
BVDSS
GATE SOURCE VOLTAGE IG(REF) 0.75BVDSS 0.50BVDSS 0.25BVDSS
BVDSS
37.5
DRAIN SOURCE VOLTAGE IG(REF) IG(ACT) TIME (µs) IG(REF) IG(ACT)
NOTE: Refer toIntersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
RFP15N15
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

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