N-channel junction low-frequency impedance conversion infrared se
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Top Searches for this datasheet
XP1D874
N-channel junction
low-frequency impedance conversion infrared sensor
0.65 2.0±0.1
2.1±0.1 0.425 1.25±0.1 0.425
0.65
Features
elements incorporated into package. (Drain-coupled FETs) Reduction mounting area assembly cost half.
0.9±
Basic Part Number Element
2SK1842 elements
Source (FET1) Drain Source (FET2)
0.7±0.1
0.12 0.02
+0.05
0.2±0.1
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol VGDO VGSO Tstg Ratings +150 Unit
Gate (FET2) Gate (FET1) EIAJ SC-88A S-Mini Type Package (5-pin)
Gate drain voltage Rating Gate source voltage element Gate current Drain current Total power dissipation Overall Junction temperature Storage temperature
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Gate drain voltage Drain current Gate cutoff current Forward transfer admittance Gate source cutoff voltage Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance
(Ta=25°C)
Symbol VGDS IDSS IGSS VGSC Ciss Crss Coss Conditions -10µA, 10V, -20V, 10V, 1kHz 10V, 10V, 1MHz 10V, 1MHz 10V, 1MHz 0.05 -1.3 -3.0 Unit
0.2±0.05
XP1D874
Ta=25°C VDS=10V
Total power dissipation (mW)
Drain current (µA)
Drain current (µA)
VGS=0.4V 0.2V
Ta=-25°C 25°C 75°C
-0.2V -0.4V
-0.6V
-2.0
-1.4
-0.8
-0.2
Ambient temperature (°C)
Drain source voltage
Drain source voltage
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