Silicon Digital Transistor Array Preliminary data Switching circuit, i
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SEMH9
Silicon Digital Transistor Array Preliminary data Switching circuit, inverter, interface circuit, driver circuit galvanic) internal isolated Transistors with good matching package Built bias resistor =10k, R2=47k)
EHA07174
Type SEMH9
Maximum Ratings Parameter
Marking
Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO Vi(on) Ptot Tstg
Value
Unit
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input Voltage collector current Total power dissipation, Junction temperature Storage temperature
Thermal Resistance
Junction soldering point
RthJS
1For calculation thJA please refer Application Note Thermal Resistance
Feb-09-2004
SEMH9
Electrical Characteristics TA=25°C, unless otherwise specified Parameter Symbol Values min. Characteristics Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current current gain Collector-emitter saturation voltage1) Input voltage Input Voltage Input resistor Resistor ratio R1/R2 0.19 0.21 0.24 Vi(on) Vi(off) VCEsat IEBO ICBO V(BR)EBO V(BR)CEO V(BR)CBO typ. max.
Unit
Characteristics Transition frequency Collector-base capacitance
Pulse test: 300µs;
Feb-09-2004
SEMH9
Current Gain (common emitter configuration)
Collector-Emitter Saturation Voltage VCEsat (IC),
VCEsat
Input Voltage Vi(on) 0.3V (common emitter configuration)
Input voltage Vi(off) (common emitter configuration)
Vi(on)
Vi(off)
Feb-09-2004
SEMH9
Total power dissipation (TS)
Ptot
Permissible Pulse Load RthJS (tp)
Permissible Pulse Load Ptotmax PtotDC (tp)
Ptotmax/ PtotDC
RthJS
0.05 0.02 0.01 0.005
0.005 0.01 0.02 0.05
Feb-09-2004
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