power rectified Silicon epitaxial type High reliability Ordering
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SDB3101F
power rectified Silicon epitaxial type High reliability
Ordering Information
Type SDB3101F Marking Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1
unit
2.9±0.1 1.90
0.4±0.05
0.15±0.05
0.9±0.1
Connections Anode Cathode
0~0.1
KSD-2065-000
SDB3101F
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature
Ta=25°C
Symbol
IFRM IFSM Tstg
Ratings
Unit
=0.33 (T<1S)
Electrical Characteristics
Characteristic
Forward voltage Forward voltage Reverse current Total capacitance Reverse recovery time
Ta=25°C
Symbol
VF(1) VF(2) IF=10mA IF=30mA VR=30V
Test Condition
Min. Typ. Max.
Unit
VR=1V, f=1MHz IR=10mA, IRR= 1mA, RL=100
KSD-2065-000
SDB3101F
Electrical Characteristic Curves
Fig. IF-VF Fig.
Fig. CT-VR
KSD-2065-000
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