CHANNEL 600V 3.2A TO-251/TO-252 PowerMESHMOSFET STD3NC60 DS(

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CHANNEL 600V 3.2A TO-251/TO-252 PowerMESHMOSFET STD3NC60 DS(

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STD3NC60
CHANNEL 600V 3.2A TO-251/TO-252 PowerMESHMOSFET
STD3NC60
DS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DPAK TO-252 (Suffix "T4") IPAK TO-251 (Suffix "-1")
DESCRIPTION PowerMESHis evolution first generation MESH OVERLAY. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns switching speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb dv/dt( Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. perating Junction Temperature
Value 12.8
Unit V/ns
February 2000
STD3NC60
THERMAL DATA
thj-
Rthj-
-sin
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
oC/W
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo BR)DSS Parameter Drain-source Breakdown Voltage Test Cond itions Min. Max.
Rating Zero Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th DS(on D(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Cond itions Min. Max.
D(on DS(on )max
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test Cond itions D(on DS(on )max Min. Max.
STD3NC60
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo Parameter Turn-on Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond itions (see test circuit, figure Min. Max.
SWITCHING
Symbo r(Vof Parameter Off-voltage Rise Time Fall Cross-over Time Test Cond itions (see test circuit, figure Min. Max.
SOURCE DRAIN DIODE
Symbo IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 11.7 Test Cond itions Min. Max. 12.8
di/dt A/µs (see test circuit, figure
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area
Thermal Impedance
STD3NC60
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STD3NC60
Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STD3NC60
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STD3NC60
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD3NC60
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD3NC60
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CHANNEL 600V 3.2A TO-251/TO-252 PowerMESHMOSFET STD3NC60 DS(

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