2112.4 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET RFP25N05

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2112.4 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET RFP25N05

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RFP25N05
2112.4
25A, 50V, 0.047 Ohm, N-Channel Power MOSFET
RFP25N05 N-channel power MOSFET manufactured using MegaFET process. This process which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers. This transistor operated directly from integrated circuits. Formerly developmental type TA09771.
Features
25A, rDS(ON) 0.047 Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND RFP25N05
Symbol
NOTE: When ordering entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-504
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP25N05
Absolute Maximum Ratings 25oC, Unless Otherwise Specified
Drain Source Voltage (Note VDSS Drain Gate Voltage VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current (Note .IDM Pulsed Avalanche Rating Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg RFP25N05 Refer Peak Current Curve Refer Curve 0.48 UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure 250mA (Figure Rated BVDSS, Rated BVDSS,TC 150oC ±20V 25A, (Figure 25V, 12.5A, 2.0, 10V, (Figure 40V, 25A, Ig(REF) 0.75mA (Figure (Figure 1075 ±100 0.047 2.083 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Reverse Recovery Time NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure Peak Current Capability Curve (Figure SYMBOL 25A, dISD/dt 100A/µs TEST CONDITIONS UNITS
4-505
RFP25N05 Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC)
DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 0.05 0.02 0.01 SINGLE PULSE 10-4 10-3 10-2 10-1 NOTES: DUTY FACTOR: t1/t2 PEAK
0.01 10-5
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
DRAIN CURRENT
PEAK CURRENT CAPABILITY
25oC RATED SINGLE PULSE
25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
100µs OPERATION THIS AREA LIMITED rDS(ON)
VDS, DRAIN SOURCE VOLTAGE
10ms 100ms
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION
10-5
10-4
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
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RFP25N05 Typical Performance Curves
AVALANCHE CURRENT
(Continued)
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 4.5V
STARTING 25oC
DRAIN CURRENT
STARTING 150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.01 TIME AVALANCHE (ms)
DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE SATURATION CHARACTERISTICS
IDS(ON) DRAIN SOURCE CURRENT
NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
-55oC 25oC
PULSE DURATION 80µs DUTY CYCLE 0.5% 10V,
175oC
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
250µA NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
4-507
RFP25N05 Typical Performance Curves
1600 DRAIN SOURCE VOLTAGE 1MHz CISS CRSS COSS CISS
(Continued)
BVDSS 37.5 BVDSS GATE SOURCE VOLTAGE
CAPACITANCE (pF)
1200
COSS CRSS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS IG(REF) 0.75mA (REF) (ACT) TIME (µs) (REF) (ACT)
12.5
DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
4-508
RFP25N05 Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
4-509
RFP25N05 PSPICE Electrical Model
.SUBCKT RFP25N05 8/19/94
1.83e-9 1.98e-9 9.7e-10
DPLCAP LDRAIN RSCL1 RSCL2 ESCL MOS1 RSOURCE LSOURCE SOURCE RDRAIN EBREAK MOS2 DBODY DBREAK
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 65.9 EVTO
GATE
DRAIN
EVTO
LDRAIN 1e-9 LGATE 4.92e-9 LSOURCE 4.5e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 1.1e-3 RGATE 2.88 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 20.3e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT 0.764
LGATE
RGATE
RBREAK RVTO VBAT
ESCL VALUE .MODEL DBDMOD 2.32e-13 5.72e-3 TRS1 2.56e-3 TRS2 -5.13e-6 1.18e-9 5.62e-8) .MODEL DBKMOD 2.00e-1 TRS1 3.33e-4 TRS2 2.68e-6) .MODEL DPLCAPMOD (CJO 6.55e-10 1e-30 .MODEL MOSMOD NMOS (VTO 3.89 15.03 1e-30 .MODEL RBKMOD (TC1 1.04e-3 -1.04e-6) .MODEL RDSMOD (TC1 5.85e-3 1.77e-5) .MODEL RSCLMOD (TC1 2.0e-3 1.5e-6) .MODEL RVTOMOD (TC1 -5.35e-3 -3.77e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 1.98 VOFF= -3.02) .ENDS NOTE: further discussion PSPICE model consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
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RFP25N05
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
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2112.4 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET RFP25N05

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