30A, 60V, Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mo
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Top Searches for this datasheet
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
30A, 60V, Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
JEDEC TO-220AB
SOURCE DRAIN GATE
July 1995
Features
30A, rDS(ON) 0.047 Protected Temperature Compensating PSPICE Model Peak Current Pulse Width Curve Rating Curve
DRAIN (FLANGE)
JEDEC TO-262AA
Description
RFP30N06LE, RF1S30N06LE RF1S30N06LESM N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those integrated circuits gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers relay drivers. These transistors operated directly from integrated circuits. These transistors incorporate protection designed withstand (Human Body Model) ESD.
PACKAGE AVAILABILITY PART NUMBER RFP30N06LE RF1S30N06LE RF1S30N06LESM PACKAGE TO-220AB TO-262AA TO-263AB BRAND F30N06LE 1S30N06L 1S30N06L
DRAIN (FLANGE)
SOURCE DRAIN GATE
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
Symbol
NOTE: When ordering entire part number. suffix, obtain TO-263 variant tape reel i.e. RF1S30N06LESM9A.
Formerly developmental type TA49027.
Absolute Maximum Ratings
+25oC RFP30N06LE, RF1S30N06LE, RF1S30N06LESM UNITS
Drain Source Voltage VDSS Drain Gate Voltage .VDGR Gate Source Voltage .VGS Drain Current Continuous. Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation +25oC Derate above +25oC Electrostatic Discharge Rating, MIL-STD-883, Category B(2) Operating Storage Temperature TSTG, Soldering Temperature Leads
Copyright
+10, Refer Peak Current Curve Refer Curve 0.645 +175
W/oC
Harris Corporation 1995 5-45
File Number
3629.1
Specifications RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Electrical Specifications
PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA 60V, +10, 30A, 30V, 30A, +25oC +150oC 25V, 1MHz 48V, 30A, 1350 0.047 1.55 UNITS
oC/W oC/W
Gate-Source Leakage Current Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) tD(ON) tD(OFF) tOFF QG(TOT) QG(5) QG(TH) CISS COSS CRSS
Source-Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 30A, dISD/dt 100A/µs UNITS
5-46
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM Typical Performance Curves
+25oC DUTY CYCLE 0.05 0.02 0.01
DRAIN CURRENT NORMALIZED THERMAL RESPONSE
100µs
OPERATION THIS AREA LIMITED rDS(ON)
10ms 100ms
NOTES: DUTY FACTOR: t1/t2 PEAK 10-2 10-1
VDSS
DRAIN-TO-SOURCE VOLTAGE
SINGLE PULSE 0.01 10-5 10-4 10-3
RECTANGULAR PULSE DURATION
FIGURE SAFE OPERATING AREA CURVE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
PEAK CURRENT CAPABILITY
+25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-6 10-5 10-4 10-3 10-2 10-1 PULSE WIDTH
(oC) CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT TEMPERATURE
FIGURE PEAK CURRENT CAPABILITY
ID(ON) STATE DRAIN CURRENT
PULSE DURATION 250µs, +25oC
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5% -55oC +25oC +175oC
DRAIN CURRENT
4.5V
DRAIN-TO-SOURCE VOLTAGE
GATE-TO-SOURCE VOLTAGE
FIGURE TYPICAL SATURATION CHARACTERISTICS
FIGURE TYPICAL TRANSFER CHARACTERISTICS
5-47
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM Typical Performance Curves
rDS(ON) NORMALIZED VGS(TH) NORMALIZED GATE THRESHOLD VOLTAGE
(Continued)
VDS, 250µA
PULSE DURATION 250µs,
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE TEMPERATURE
POWER DISSIPATION MULTIPLIER
BVDSS NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE
250µA
JUNCTION TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE TEMPERATURE
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
DRAIN SOURCE VOLTAGE
BVDSS
BVDSS 3.75
CAPACITANCE (pF)
1500
CISS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS
2.50
1000
COSS CRSS
IG(REF) 0.62mA IG(REF) IG(ACT) TIME IG(REF) IG(ACT)
1.25
DRAIN-TO-SOURCE VOLTAGE
0.00
FIGURE TYPICAL CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT. REFER HARRIS APPLICATION NOTES AN7254 AN7260
5-48
GATE SOURCE VOLTAGE
2000
1MHz
5.00
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM Typical Performance Curves
AVALANCHE CURRENT STARTING +25oC STARTING +150oC
(Continued)
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) 0.01 TIME AVALANCHE (ms)
FIGURE UNCLAMPED INDUCTIVE SWITCHING
Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tD(ON)
tOFF tD(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
5-49
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM Temperature Compensated PSPICE Model RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
SUBCKT RFP30N06LE 3.34e-9 3.44e-9 1.343e-9 DBODY DBDMOD DBREAK DBKMOD DESD1 DESD1MOD DESD2 DESD2MOD DPLCAP DPLCAPMOD EBREAK 75.39 EVTO
GATE
6/2/93
DPLCAP RSCL2
DRAIN LDRAIN RSCL1 DBREAK EBREAK DBODY
ESCL RDRAIN
EVTO LGATE RGATE DESD1 DESD2
MOS1
MOS2
LDRAIN 1e-9 LGATE 7.22e-9 LSOURCE 6.31e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 11.86e-3 RGATE 2.52 RSCL1 RSLVCMOD 1e-6 RSCL2 RSOURCE RDSMOD 26.6e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT
RSOURCE LSOURCE SOURCE
RBREAK RVTO VBAT
ESCL VALUE .MODEL DBDMOD 3.80e-13 1.12e-2 TRS1 1.61e-3 TRS2 6.08e-6 1.05e-9 3.84e-8) .MODEL DBKMOD 1.82e-1 TRS1 7.50e-3 TRS2 -4.0e-5) .MODEL DESD1MOD 13.54 TBV1 TBV2 45.5 TRS1 TRS2 .MODEL DESD2MOD 11.46 TBV1 -7.576e-4 TBV2 -3.0e-6 TRS1 TRS2 .MODEL DPLCAPMOD (CJO 0.591e-9 1e-30 .MODEL MOSMOD NMOS (VTO 1.94 139.2 1e-30 .MODEL RBKMOD (TC1 1.07e-3 -3.03e-7) .MODEL RDSMOD (TC1 5.38e-3 1.64e-5) .MODEL RSLVCMOD (TC1 1.75e-3 3.90e-6) .MODEL RVTOMOD (TC1 -2.15e-3 -5.43e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -4.05 VOFF -1.5) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -1.5 VOFF -4.05) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -2.2 VOFF 2.8) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF -2.2) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records 1991.
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