RF1K49088 Dual N-Channel power MOSFET manufactured using advanced Mega
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RF1K49088
RF1K49088 Dual N-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49088.
BRAND RF1K49088
January 1997
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
Features
3.5A, rDS(ON) 0.060 Temperature Compensating PSPICE Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve
Ordering Information
PART NUMBER RF1K49088 PACKAGE MS-012AA
Symbol
D1(8) D1(7)
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e. RF1K4908896.
S1(1) G1(2)
D2(6) D2(5)
S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
LittleFETis trademerk Harris Corporation
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1997
File Number
3952.4
5-58
RF1K49088
Absolute Maximum Ratings
25oC Unless Otherwise Specified RF1K49088 Refer Peak Current Curve Refer Curve 0.016 UNITS
Drain Source Voltage VDSS Drain Gate Voltage VDGR Gate Source Voltage Drain Current Continuous (Pulse Width Pulsed .IDM Pulsed Avalanche Rating Power Dissipation 25oC Derate Above 25oC. Operating Storage Temperature TSTG, Soldering Temperature Leads
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA 30V, ±10V 3.5A, 15V, 3.5A, 4.29, 25oC 150oC 25V, 1MHz 24V, 3.5A, 6.86 Pulse width Device mounted FR-4 material 0.060 62.5 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS
Source Drain Diode Ratings Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 3.5A 3.5A, dISD/dt 100A/µs 1.25 UNITS
5-59
RF1K49088 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT AMBIENT TEMPERATURE (oC) AMBIENT TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT TEMPERATURE
DRAIN CURRENT
ZJA, NORMALIZED THERMAL IMPEDANCE
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01
RATED 25oC
10ms 100ms
SINGLE PULSE NOTES: DUTY FACTOR: t1/t2 PEAK
OPERATION THIS AREA LIMITED rDS(ON) VDSS
0.01 10-3
10-2 10-1 RECTANGULAR PULSE DURATION
0.01
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE FORWARD BIAS SAFE OPERATING AREA
PEAK CURRENT CAPABILITY
25oC
AVALANCHE CURRENT
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) STARTING 25oC
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5
STARTING 150oC
10-4
10-3 10-2 10-1 PULSE WIDTH
TIME AVALANCHE (ms)
FIGURE PEAK CURRENT CAPABILITY
NOTE: Refer Harris Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
5-60
RF1K49088 Typical Performance Curves
4.5V
(Continued)
ID(ON) ON-STATE DRAIN CURRENT -55oC 25oC 150oC
DRAIN CURRENT
PULSE DURATION 250µs, 25oC VDS, DRAIN SOURCE VOLTAGE
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5% VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
rDS(ON) ON-STATE RESISTANCE 7.0A SWITCHING TIME (ns)
15V, 3.5A, 4.29 tD(OFF)
tD(ON)
3.5A 1.75A
0.5A
VGS, GATE SOURCE VOLTAGE
RGS, GATE SOURCE RESISTANCE
FIGURE rDS(ON) VARYING CONDITIONS GATE VOLTAGE DRAIN CURRENT
FIGURE SWITCHING TIME FUNCTION GATE RESISTANCE
PULSE DURATION 250µs, 3.5A NORMALIZED RESISTANCE THRESHOLD VOLTAGE
VDS, 250µA
NORMALIZED GATE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
5-61
RF1K49088 Typical Performance Curves
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA
(Continued)
1000 CISS CAPACITANCE (pF) FREQUENCY 1MHz
COSS
CRSS
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE VOLTAGE
DRAIN-SOURCE VOLTAGE BVDSS 22.5 BVDSS
5.00 GATE-SOURCE VOLTAGE
3.75
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 8.57 IG(REF) 0.2mA TIME (µs)
2.50
1.25
0.00
NOTE: Refer Harris Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
5-62
RF1K49088 Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Soldering Precautions
soldering process creates considerable thermal stress semiconductor component. melting temperature solder higher than maximum rated temperature device. amount time device heated high temperature should minimized assure device reliability. Therefore, following precautions should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should always less than 100oC. Failure preheat device result excessive thermal stress which damage device. maximum temperature gradient should less than second when changing from preheating soldering. peak temperature soldering process should least 30oC higher than melting point solder chosen. maximum soldering temperature time must exceed 260oC seconds leads case device. After soldering complete, device should allowed cool naturally least three minutes, forced cooling will increase temperature gradient result latent failure mechanical stress. During cooling, mechanical stress shock should avoided.
5-63
RF1K49088 Temperature Compensated PSPICE Model RF1K49088
SUBCKT RF1K49088 1.081e-9 1.138e-9 0.673e-9
7/21/94
DPLCAP MOS2 MOS1 RSOURCE EBREAK DBODY RDRAIN DBREAK LDRAIN
DRAIN
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 34.1 EVTO LDRAIN 1e-9 LGATE 1.233e-9 LSOURCE 0.452e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 1.408e-3 RGATE 3.33 RSOURCE RDSMOD 20e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
GATE LGATE RGATE
EVTO
LSOURCE SOURCE RVTO
RBREAK
VBAT
VBAT 0.211 .MODEL DBDMOD 2.82e-13 1.72e-2 TRS1 1.58e-3 TRS2 1.23e-7 9.19e-10 2.03e-8) .MODEL DBKMOD 2.65e-1 TRS1 5.00e-3 TRS2 7.09e-5) .MODEL DPLCAPMOD (CJO 0.42e-9 1e-30 .MODEL MOSMOD NMOS (VTO 2.01 15.01 1e-30 .MODEL RBKMOD (TC1 1.02e-3 -1.98e-6) .MODEL RDSMOD (TC1 3.50e-3 3.70e-6) .MODEL RVTOMOD (TC1 -2.53e-3 8.13e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -6.2 VOFF= -3.8) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.8 VOFF= -6.2) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -1.4 VOFF= 4.1) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF= -1.4) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
5-64
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