CHANNEL 0.011 DPAK STripFETPOWER MOSFET TYPE STD45NF03L DS(o

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CHANNEL 0.011 DPAK STripFETPOWER MOSFET TYPE STD45NF03L DS(o

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STD45NF03L
CHANNEL 0.011 DPAK STripFETPOWER MOSFET
TYPE STD45NF03L
DS(o 0.013
TYPICAL RDS(on) 0.011 THRESHOLD DRIVE SUFFIX "T4" ORDERING TAPE REEL
DESCRIPTION This Power MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC DC-AC CONVERTERS
DPAK TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 31.5 0.37
starting 22.5A
Unit
Pulse width limited safe operating area
September 1999
STD45NF03L
THERMAL DATA
j-pc -amb hj-s Thermal Resistance Junction-PC Board Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 62.5
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions 22.5 22.5 Min. Typ. 0.011 0.013 Max. 0.013 0.018 Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on 22.5 Min. Typ. 2550 Max. Unit
STD45NF03L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Delay Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions 22.5 (Resistive Load, fig. 22.5 Min. Typ. Max. Unit
SWITCHING
Symbo d(of Parameter Turn-off Delay Fall Test ditions 22.5 (Resistive Load, fig. Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, fig. Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STD45NF03L
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STD45NF03L
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD45NF03L
Information furnished believed accurate reliable. However, STMicroelect onics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specific ation mentioned this publication subjec change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japa Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A.
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