Download

PDF Abstract Text:

PF0121

MOS FET Power Amplifier Module for GSM Mobile Phone

PF0121
MOS FET Power Amplifier Module for GSM Mobile Phone
ADE-208-097A (Z) 2nd Edition July 1996 Application
For GSM CLASS2 890 to 915 MHz
Features
· Low power control current: 0.9 mA Typ · High speed switching: 1.5 µsec Typ · Wide power control range: 100 dB Typ
Pin Arrangement
· RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
PF0121
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout
Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 6 8 20 -30 to +110 -40 to +110 Unit V A V mW °C °C
PF0121
VSWR (in) - Pout (1) Pout (2) - t r, t f - 17 9 - -
No parasitic oscillation -
Test System Diagram
S.G Power Meter L.P.F 3dB ATT
VAPC VDD Spectrum Analyzer Test Fixture Directional Coupler Directional Coupler
RF SW.
Power Meter
Phase Shifter
Short
PF0121
Switching Time Test Diagram
100p Oscillo Scope Vout
PF0121
Test Fixture Pattern
Unit: mm
VDD 80 3.5
Mechanical Characteristics
PF0121
Note for Use
PF0121
Characteristic Curves
V.S.W.R. (in)
VSWRin
V.S.W.R. (in)
2 VSWRin
Supply Voltage VDD (V)
PF0121
Output Power Pout (W)
PF0121
V.S.W.R. (in)
4 VAPC 2 VSWRin
0 0 2 4 6 8 Input Power Pin (mW)
PF0121
V.S.W.R. (in)
4 VAPC 2 VSWRin 895 900 905 910
Frequency f (MHz)
PF0121
Package Dimensions
Unit: mm
Hitachi Code JEDEC EIAJ Weight (reference value) RF-B2 - - 16 g
Cautions
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109