Power Transistor (50V, 2SD1760 2SD1864 !Features VCE(sat). V

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Power Transistor (50V, 2SD1760 2SD1864 !Features VCE(sat). V

Datasheet Thumbnail

Top Searches for this datasheet

2SD1760 2SD1864
Power Transistor (50V,
2SD1760 2SD1864
!Features VCE(sat). VCE(sat) 0.5V (Typ.) (IC/IB 0.2A) Complements 2SB1184 2SB1243. !External dimensions (Units
2SD1760
1.5±0.3
6.5±0.2 +0.2 -0.1 C0.5 +0.2 -0.1 0.5±0.1
2SD1864
6.8±0.2 2.5±0.2
+0.3 -0.1
9.5±0.5
!Structure Epitaxial planar type silicon transistor
0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2
0.5±0.1
2.54 2.54
14.5±0.5
0.75
0.65±0.1
0.65Max.
4.4±0.2
1.05
0.45±0.1
ROHM CPT3 EIAJ SC-63
Base Collector Emitter
ROHM
Emitter Collector Base
!Absolute maximum ratings 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 Symbol VCBO VCEO VEBO Tstg Limits -55~+150 Unit (DC) (Pulse) =25°C)*2
Junction temperature Storage temperature
Single pulse, 100ms Printed circuit board, 1.7mm thick, collector copper plating 100mm2 larger.
2SD1760 2SD1864
!Electrical characteristics 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO (sat) Min. Typ. Max. Unit 50µA 50µA IC/IB 2A/0.2A 0.5A -500mA, 30MHz 10V, 1MHz Conditions
Measured using pulse current.
!Packaging specifications
Package Code Type 2SD1760 2SD1864 Basic ordering unit (pieces) 2500 Taping 2500
values classified follows:
Item
82~180
120~270
180~390
!Electrical characteristic curves
COLLECTOR CURRENT
25°C
45mA 50mA
COLLECTOR CURRENT
COLLECTOR CURRENT
0.05 0.02 0.01 BASE EMITTER VOLTAGE 100°C 25°C -25°C
40mA 35mA 30mA 25mA 20mA
20mA 15mA
50mA 45mA 40mA 35mA 30mA 25mA
25°C
15mA
10mA
10mA
COLLECTOR EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
Fig.1 Grounded emitter propagation characteristics
1000
CURRENT GAIN
Fig.2 Grounded emitter output characteristics
1000
CURRENT GAIN
Fig.3 Grounded-emitter output characteristics(
COLLECTOR SATURATION VOLTAGE VCE(sat)
25°C
25°C IC/IB 0.05 0.02 0.01 0.010.02 0.05
0.01 0.02 0.05
100°C
25°C -25°C
0.01 0.02 0.05
COLLECTOR CURRENT
COLLECTOR CURRENT
COLLECTOR CURRENT
Fig.4 current gain collector current(
Fig.5 current gain collector curren(
Fig.6 Collector-emitter saturation voltage collector current
2SD1760 2SD1864
COLLECTOR SATURATION VOLTAGE (sat) BASE SATURATION VOLTAGE (sat)
0.05 0.02 (sat) 100°C -25°C 25°C -25°C (sat) 25°C 100°C
TRANSITION FREQUENCY (MHz)
lC/lB
25°C
COLLECTOR OUTPUT CAPACITANCE (pF)
1000
1000
25°C 1MHz
0.01 0.01 0.02 0.05
5001000
COLLECTOR CURRENT
EMITTER CURRENT (mA)
COLLECTOR BASE VOLTAGE
Fig.7 Collector-emitter saturation voltage collector current Base-emitter saturation voltage collector current
Fig.8 Gain bandwidth product emitter current
Fig.9 Collector output capacitance collector-base voltage
TRANSIENT THERMAL RESISTANCE (°C/W)
COLLECTOR CURRENT
COLLECTOR CURRENT
VCE=5v IC=0.2A
0.05 0.02 25°C Single pulse 0.01
0.05 Ta=25°C Single nonrepetitive 0.02 pulse
1Sec 10Sec 100Sec
COLLECTOR EMITTER VOLTAGE
TIME (ms)
COLLECTOR EMITTER VOLTAGE
Fig.10 Safe operating area (2SD1760)
Fig.11 Transient thermal resistance (2SD1760)
Fig.12 Safe operating area (2SD1864)
TRANSIENT THERMAL RESISTANCE (°C/W)
10Sec 100Sec1000Sec
TIME (ms)
Fig.13 Transient thermal resistance (2SD1864)

Power Transistor (50V, 2SD1760 2SD1864 !Features VCE(sat). V

Top Searches for this datasheet

Other recent searches