Features: High Voltage: VCBO 1500V Saturation Voltage: VCE(sat) High S
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NTE2641 Silicon Transistor Horizontal Deflection Output High Resolution Displays Color
Features: High Voltage: VCBO 1500V Saturation Voltage: VCE(sat) High Speed: 0.1µs Absolute Maximum Ratings: +25°C unless otherwise specified) Collector-Base Voltage, VCBO 1500V Collector-Emitter Voltage, VCEO 750V Emitter-Base Voltage, VEBO Collector Current, Continuous Pulse Base Current, 8.5A Collector Power Dissipation +25°C), Operating Junction Temperature, +150°C Storage Temperature Range, Tstg -55° +150°C Electrical Characteristics: +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Breakdown Voltage Current Gain Symbol ICBO IEBO Test Conditions 1500V, Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance VCE(sat) VBE(sat) 14A, 3.5A 14A, 3.5A 10V, 0.1A 10V, 1MHz Unit
V(BR)CEO 10mA,
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Switching Time Storage Time Fall Time Storage Time Fall Time tstg tstg IB1(end) 1.3A, 64kHz 7.5A, IB1(end) 1.1A, 100kHz 0.10 0.15 Symbol Test Conditions Unit
.222 (5.65) .140 (3.55) .199 (5.05) Isol .638 (16.2)
.354 (9.0)
.835 (21.2)
.817 (20.75)
1.673 (42.5)
.091 (2.3)
.433 (11.0)
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