These P-Channel enhancement mode power field effect transistors produc

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NDH8447 P-Channel Enhancement Mode Field Effect Transistor
These P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
-4.4A, -30V. RDS(ON) 0.053 -10V RDS(ON) 0.095 -4.5V High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
SuperSOTTM-8
Absolute Maximum Ratings
Symbol VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
25°C unless otherwise note
NDH8447
(Note
Units
-4.4
Maximum Power Dissipation
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
1997 Fairchild Semiconductor Corporation
NDH8447 Rev.
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current -250 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, -250 125°C Static Drain-Source On-Resistance -4.4 125°C -4.5 -3.4 ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance -4.4 -0.7 -1.5 -1.2 0.045 0.075 0.08 -100
CHARACTERISTICS (Note Gate Threshold Voltage -2.2 0.053 0.11 0.095
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -4.4 VGEN RGEN
NDH8447 Rev.
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions -1.5
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -1.5 -0.8
-1.2
JA(t
JC+RC
RDS(ON
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted cpper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8447 Rev.
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
-5.0
DRAIN-SOURCE ON-RESISTANCE
-10V
-8.0 -6.0 -4.5
DS(on), NORMALIZED
-3.5V
-4.0 -4.5 -5.0
-4.0
-3.5
-6.0 -8.0
-3.0
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
DS(ON), NORMALIZED
=-4.4A -10V
DS(on), NORMALIZED
-10V
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
-10V
DRAIN CURRENT
25°C 125°C
NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
-55°C
-250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH8447 Rev.
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08 1.06 1.04 1.02 0.98 0.96 0.94
REVERSE DRAIN CURRENT
-250µA
DSS, NORMALIZED
125°C
25°C -55°C
0.01
JUNCTION TEMPERATURE (°C)
0.001
-VSD BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
2000
-4.4A
GATE-SOURCE VOLTAGE 1000 CAPACITANCE (pF)
-5.0V -10V -15V
-VDS DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
-VDD
d(on)
d(off)
VOUT
PULSE IDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH8447 Rev.
Typical Electrical ThermalCharacteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
-10V
-55°C 25°C
STEADY-STATE POWER DISSIPATION
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
STEADY-STATE DRAIN CURRENT
DRAIN CURRENT
0.03 0.01
4.5"x5" FR-4 Board
SINGLE PULSE Note 25°C
Still
COPPER MOUNTING AREA
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05
0.02 0.05
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
0.03 0.02 0.01
0.01 Single Pulse
Duty Cycle, TIME (sec)
.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH8447 Rev.
NDH8447 Rev.

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