REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR IRHN

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REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR IRHN

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91795
REPETITIVE AVALANCHE dv/dt RATED
HEXFET
TRANSISTOR
IRHNB7160 IRHNB8160
N-CHANNEL
MEGA HARD
100Volt, 0.040, HARD HEXFET
International Rectifier's HARD technology HEXFETs demonstrate immunity failure. Additionally, under identical pre- post-radiation test conditions, International Rectifier's HARD HEXFETs retain identical electrical specifications Rads (Si) total dose. compensation gate drive circuitry required. These devices also capable surviving transient ionization pulses high 1012 Rads (Si)/Sec, return normal operation within microseconds. Since HARD process utilizes International Rectifier's patented HEXFET technology, user expect highest quality reliability industry. HARD HEXFET transistors also feature wellestablished advantages MOSFETs, such voltage control, very fast switching, ease paralleling temperature stability electrical parameters. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits space weapons environments.
Product Summary
Part Number IRHNB7160 IRHNB8160 BVDSS 100V 100V RDS(on) 0.040 0.040
Features:
Radiation Hardened Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount LightWeight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 32.5 (For sec) (typical)
Pre-Irradiation
IRHNB7160, IRHNB8160 Units
W/°C V/ns
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8/25/98
IRHNB7160, IRHNB8160 Devices
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.11 0.040 0.045 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 32.5A 12V, VGS, 1.0mA 15V, 32.5A VDS= Rating,VGS=0V Rating 125°C -20V 12V, Rating 50V, 51A, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
Measured from drain lead, (0.25 from package center die. Measured from source lead, (0.25 from package source bonding pad.
Modified MOSFET symbol showing internal inductances.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
5300 1600
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
Modified MOSFET symbol showing integral reverse junction rectifier. 25°C, 51A, 25°C, 51A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
0.42
Units
°C/W
Test Conditions
Soldered inch square clad board
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IRHNB7160, IRHNB8160Devices
Radiation Characteristics
Radiation Performance Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs tested verify their hardness capability. hardness assurance program International Rectifier comprises three radiation environments. Table column IRHNB8160. values Table will either dose rate test circuits that used. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide Every manufacturing tested dose rate direct comparison. (total dose) environment MIL-STD-750, test method 1019 condition International Rectifier High dose rate testing done special reimposed standard gate condition volts quest basis using dose rate 1012 Rads (Si)/ note bias condition equal (See Table device rated voltage note Pre- post- irradiation limits devices irradiated Rads International Rectifier radiation hardened HEXFETs (Si) identical presented Table col- have been characterized heavy Single Event IRHNB7160. Post-irradiation limits Effects (SEE) environments. Single Event Effects charvices irradiated x106 Rads (Si) presented acterization shown Table
Table Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1
IRHNB7160 IRHNB8160
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions
1.0mA VDS, 1.0mA +20V VDS=0.8 Rating, VGS=0V 12V, =32.5A 25°C, 51A,VGS
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
-100 0.040
1.25
-100 0.057
Table High Dose Rate
Parameter
VDSS di/dt
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Units
Test Conditions
Drain-to-Source Voltage
Applied drain-to-source voltage during gamma-dot Peak radiation induced photo-current A/µsec Rate rise photo-current Circuit inductance required limit di/dt
Table Single Event Effects
(Si) (MeV/mg/cm2)
Fluence (ions/cm2)
Range (µm)
VDSBias
Bias
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IRHNB7160, IRHNB8160 Devices
Pre-Irradiation
1000
Drain-to-Source Current
5.0V
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
20µs PULSE WIDTH
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRHNB7160, IRHNB8160Devices
Pre-Irradiation
10000
8000
Gate-to-Source Voltage
Capacitance (pF)
1MHz Ciss SHORTED Crss Coss
6000
Ciss
4000
2000
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED
DS(on)
Drain Current
100us 10ms
Single Pulse
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHNB7160, IRHNB8160 Devices
Pre-Irradiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHNB7160, IRHNB8160Devices
Pre-Irradiation
1200
Single Pulse Avalanche Energy (mJ)
1000
BOTTOM
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHNB7160, IRHNB8160 Devices
Repetitive Rating; Pulse width limited
maximum junction temperature. Refer current HEXFET reliability report. 25V, Starting 25°C, [0.5 (IL2) Peak 51A, 12V, 51A, di/dt 410A/µs, BVDSS, 150°C Suggested 2.35 Pulse width Duty Cycle
Pre-Irradiation
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. rated BVDSS (pre-irradiation) applied during irradiation MlL-STD-750, method 1019, condition This test performed using flash x-ray source operated e-beam mode (energy ~2.5 MeV), nsec pulse. Pre-Irradiation Post-Irradiation test conditions identical facilitate direct comparison circuit applications.
Case Outline Dimensions SMD-3
SMD-3
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 8371 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 8/98
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REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR IRHN

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