REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR -100 Volt

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REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR -100 Volt

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90886A
REPETITIVE AVALANCHE dv/dt RATED
HEXFET TRANSISTOR
-100 Volt, 0.3, HARD HEXFET
International Rectifier's P-Channel HARD technology HEXFETs demonstrate excellent threshold voltage stability breakdown voltage stability total radiation doses high Rads (Si). Under identical pre- postradiation test conditions, International Rectifier's P-Channel HARD HEXFETs retain identical electrical specifications Rads (Si) total dose. compensation gate drive circuitry required. These devices also capable surviving transient ionization pulses high 1012 Rads (Si)/Sec, return normal operation within microseconds. Single Event Effect (SEE) testing International Rectifier P-Channel HARD HEXFETs demonstrated virtual immunity failure. Since PChannel HARD process utilizes International Rectifier's patented HEXFET technology, user expect highest quality reliability industry. P-Channel HARD HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling temperature stability electrical parameters. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits space weapons environments.
IRHN9130 IRHN93130
P-CHANNEL
HARD
Product Summary
Part Number IRHN9130 IRHN93130 BVDSS -100V -100V RDS(on) -11A -11A
Features:
Radiation Hardened Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
-12V, 25°C -12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight -7.0
Pre-Irradiation
IRHN9130, IRHN93130 Units
W/°C V/ns
(0.063 (1.6mm) from case (typical)
02/02/99
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IRHN9130, IRHN93130 Device
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.1 0.325 -4.0 -250 -100 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -12V, -7.0A -12V, -11A VGS, -1.0mA -15V, -7.0A VDS= Rating,VGS=0V Rating 125°C =-20 -12V, -11A Rating -50V, -11A,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
Measured from drain lead, (0.25 from package center die. Measured from source lead, (0.25 from package source bonding pad.
Modified MOSFET symbol showing internal inductances.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1200
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-3.0 0.84
Test Conditions
Modified MOSFET symbol showing integral reverse junction rectifier. 25°C, -11A, 25°C, -11A, di/dt -100A/µs -50V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Units
1.67 °C/W
Test Conditions
soldered square copper-clad bord
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Radiation Characteristics
Radiation Performance Hard HEXFETs
IRHN9130, IRHN93130 Device
tested specified using same drive circuitry test conditions order provide direct comparison. should noted that radiation level Rads (Si) only parametric limit change VGS(th) maximum. Every manufacturing tested dose rate (total dose) environment MIL-STD-750, test High dose rate testing done special remethod 1019 condition International Rectifier quest basis using dose rate 1012 Rads imposed standard gate condition volts note (Si)/Sec (See Table International Rectifier radia5 bias condition equal device tion hardened P-Channel HEXFETs considered rated voltage note Pre- post- irradiation lim- neutron-tolerant, stated MIL-PRF-19500 devices irradiated Rads (Si) Group identical presented Table1,column1, International Rectifier radiation hardened P-Channel IRHN9130. Post-irradiation limits devices irra- HEXFETs have been characterized heavy diated Rads (Si) presented Table Single Event Effects (SEE) environments. Single column IRHN93130. values Table will Event Effects characterization shown Table either dose rate test circuits that used. Both pre- post-irradiation performance International Rectifier Radiation Hardened HEXFETs tested verify their hardness capability. hardness assurance program International Rectifier prises three radiation environments.
Table Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1
IRHN9130 IRHN93130
100K Rads (Si) 300K Rads (Si) Units
Test Conditions
-1.0mA VDS, -1.0mA -20V =0.8 Rating, -12V, 25°C, -11A,VGS
Drain-to-Source Breakdown Voltage -100 Gate Threshold Voltage -2.0 Gate-to-Source Leakage Forward -Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
-4.0 -100 -3.0
-100 -2.0
-5.0 -100 -3.0
Table High Dose Rate
Parameter
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
di/dt
Units Test Conditions Applied drain-to-source voltage during gamma-dot Peak radiation induced photo-current -800 -160 A/µsec Rate rise photo-current Circuit inductance required limit di/dt
Table Single Event Effects
(Si) (MeV/mg/cm2)
Fluence (ions/cm2)
Range (µm)
VDSBias
-100
Bias
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IRHN9130, IRHN93130 Device
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
-5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
-11A
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
-VGS, Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHN9130, IRHN93130 Device
2000
-VGS Gate-to-Source Voltage
1600
1MHz Ciss SHORTED Crss Coss
-11A
Capacitance (pF)
Ciss
1200
Coss
Crss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
OPERATION THIS AREA LIMITED RDS(on)
-ISD Reverse Drain Current
Drain Current
100us
Single Pulse
10ms 1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
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Maximum Safe Operating Area
IRHN9130, IRHN93130 Device
Pre-Irradiation
D.U.T.
Drain Current
-12V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC
0.02 0.01
0.01 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN9130, IRHN93130 Device
Single Pulse Avalanche Energy (mJ)
-4.9A -7.0A BOTTOM -11A
-12VV
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-12V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
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13b. Gate Charge Test Circuit
D.U.T.
IRHN9130, IRHN93130 Device
Repetitive Rating; Pulse width limited
maximum junction temperature. Refer current HEXFET reliability report. -25V, Starting 25°C, [0.5 (IL2) Peak -11A, -12V, -11A, di/dt -480A/µs, BVDSS, 150°C Suggested Pulse width Duty Cycle
Pre-Irradiation
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. rated (pre-Irradiation) applied during irradiation MlL-STD-750, method 1019, condition This test performed using flash x-ray source operated e-beam mode (energy ~2.5 MeV), nsec pulse. Pre-Irradiation Post-Irradiation test conditions identical facilitate direct comparison circuit applications.
Case Outline Dimensions SMD-1
SMD-1
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 2/99
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REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR -100 Volt

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