RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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91862B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Part Number Radiation Level IRHM57260 100K Rads (Si) IRHM53260 300K Rads (Si) IRHM54260 IRHM58260 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.044 0.044 0.044 0.045 35A* 35A* 35A* 35A*
IRHM57260 200V, N-CHANNEL
TECHNOLOGY
TO-254AA
International Rectifier's R5technology provides high performance power MOSFETs space applications. These devices have been characterized Single Event Effects (SEE) with useful performance (MeV/(mg/cm2)). combination RDS(on) gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Current limited internal wire diameter footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
(0.063 /1.6 from case 10s) (Typical)
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1/22/2001
IRHM57260
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.26 0.044 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, VGS, 1.0mA 15V, VDS= 160V ,VGS=0V 160V, 125°C -20V =12V, 100V 100V, =12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in.
from package) Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Drain
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
7580
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 35A, 25°C, 35A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Current limited internal wire diameter
Thermal Resistance
Parameter
thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Units
0.50 0.21 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHM57260
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254) Diode Forward Voltage 600K Rads(Si)1 1000K Rads (Si)2 Units -100 0.039 0.044 1.25 -100 0.040 0.045
Test Conditions
1.0mA VDS, 1.0mA VDS= 160V, 12V, =32A 12V, =32A
Part numbers IRHM57260, IRHM53260 IRHM54260 Part number IRHM58260
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 32.5 28.4
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHM57260
Pre-Irradiation
1000
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHM57260
12000
10000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
160V 100V
Capacitance (pF)
8000
Ciss
6000
4000
2000
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(ON)
Drain Current
10us 100us
25°C 150°C Single Pulse
10ms
,Source-to-Drain Voltage
1000
VDS, Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHM57260
Pre-Irradiation
LIMITED PACKAGE
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM57260
1200
Single Pulse Avalanche Energy (mJ)
1000
BOTTOM
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHM57260
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 0.82 Peak 35A, 35A, di/dt 410A/µs, 200V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-254AA
3.84 3.59
COLL
3.81
3.81
LEGEND DRAIN SOURCE GATE IRHM57160D IRHM57160U
CAUTION BERYLLIA WARNING MIL-PRF-19500 Package containing beryllia shall ground, sandblasted, machined, have other operations performed them which will will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 01/01
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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