SYNCHRONOUS DRAM PC66-, PC100-, PC133-compliant Fully synchronous

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SYNCHRONOUS DRAM PC66-, PC100-, PC133-compliant Fully synchronous

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64Mb: SDRAM
SYNCHRONOUS DRAM
PC66-, PC100-, PC133-compliant Fully synchronous; signals registered positive edge system clock Internal pipelined operation; column address changed every clock cycle Internal banks hiding access/precharge Programmable burst lengths: full page Auto Precharge, includes CONCURRENT AUTO PRECHARGE, Auto Refresh Modes Self Refresh Modes: standard power 64ms, 4,096-cycle refresh LVTTL-compatible inputs outputs Single +3.3V ±0.3V power supply
MT48LC16M4A2 banks MT48LC8M8A2 banks MT48LC4M16A2 banks latest data sheet, please refer Micron site: www.micron.com/dramds
ASSIGNMENT (Top View) 54-Pin TSOP
VDDQ VssQ VDDQ VssQ DQML CAS# RAS#
OPTIONS
Configurations banks) banks) banks) WRITE Recovery (tWR) CLK"1 Plastic Package OCPL2 54-pin TSOP (400 mil) Timing (Cycle Time) 10ns (PC100) 7.5ns (PC133) 7.5ns (PC133) (PC133, Only) Self Refresh Standard Power Operating Temperature Range Commercial (0°C +70°C) Industrial (-40°C +85°C)
Part Number Example:
MARKING
16M4 4M16
DQ15 VssQ DQ14 DQ13 VDDQ DQ12 DQ11 VssQ DQ10 VDDQ DQMH
Note: symbol indicates signal active LOW. dash indicates function same function.
Configuration Refresh Count Addressing Bank Addressing Column Addressing banks (A0-A11) (BA0, BA1) (A0-A9) banks (A0-A11) (BA0, BA1) (A0-A8) banks (A0-A11) (BA0, BA1) (A0-A7)
None None
TIMING PARAMETERS
SPEED GRADE CLOCK FREQUENCY ACCESS TIME SETUP TIME 5.4ns 5.5ns 5.4ns 5.4ns 1.5ns 1.5ns 1.5ns 1.5ns 1.5ns HOLD TIME 0.8ns 0.8ns 0.8ns 0.8ns
MT48LC8M8A2TG-75
NOTE: Refer Micron Technical Note: TN-48-05. Off-center parting line. Consult Micron availability. recommended designs. Shown PC100 compatibility.
(READ) latency
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
64Mb SDRAM PART NUMBERS
PART NUMBER MT48LC16M4A2TG MT48LC8M8A2TG MT48LC4M16A2TG ARCHITECTURE
GENERAL DESCRIPTION
Micron® 64Mb SDRAM high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. internally configured quadbank DRAM with synchronous interface (all signals registered positive edge clock signal, CLK). Each x4's 16,777,216-bit banks organized 4,096 rows 1,024 columns bits. Each x8's 16,777,216-bit banks organized 4,096 rows columns bits. Each x16's 16,777,216bit banks organized 4,096 rows columns bits. Read write accesses SDRAM burst oriented; accesses start selected location continue programmed number locations programmed sequence. Accesses begin with registration ACTIVE command, which then followed READ WRITE command. address bits registered coincident with ACTIVE command used select bank accessed (BA0, select bank; A0-A11 select row).
dress bits registered coincident with READ WRITE command used select starting column location burst access. SDRAM provides programmable READ WRITE burst lengths locations, full page, with burst terminate option. auto precharge function enabled provide selftimed precharge that initiated burst sequence. 64Mb SDRAM uses internal pipelined architecture achieve high-speed operation. This architecture compatible with rule prefetch architectures, also allows column address changed every clock cycle achieve highspeed, fully random access. Precharging bank while accessing other three banks will hide precharge cycles provide seamless, highspeed, random-access operation. 64Mb SDRAM designed operate 3.3V memory systems. auto refresh mode provided, along with power-saving, power-down mode. inputs outputs LVTTL-compatible. SDRAMs offer substantial advances DRAM operating performance, including ability synchronously burst data high data rate with automatic column-address generation, ability interleave between internal banks order hide precharge time capability randomly change column addresses each clock cycle during burst access.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
TABLE CONTENTS
Functional Block Diagram Functional Block Diagram Functional Block Diagram Descriptions Functional Description Initialization Register Definition Mode Register Burst Length Burst Type Latency Operating Mode Write Burst Mode Commands
Truth Table (Commands Operation)
Concurrent Auto Precharge Truth Table (CKE) Truth Table (Current State, Same Bank) Truth Table (Current State, Different Bank) Absolute Maximum Ratings Electrical Characteristics Operating Conditions Specifications Conditions Capacitance Electrical Characteristics Recommended Operating Conditions (Timing Table) Timing Waveforms Initialize Load Mode Register Power-Down Mode Clock Suspend Mode Auto Refresh Mode Self Refresh Mode Reads Read Without Auto Precharge Read With Auto Precharge Single Read Without Auto Precharge Single Read With Auto Precharge Alternating Bank Read Accesses Read Full-Page Burst Read Operation Writes Write Without Auto Precharge Write With Auto Precharge Single Write Without Auto Precharge Single Write With Auto Precharge Alternating Bank Write Accesses Write Full-Page Burst Write Operation
Command Inhibit Operation (NOP) Load Mode Register Active Read Write Precharge Auto Precharge Burst Terminate Auto Refresh Self Refresh Operation Bank/Row Activation Reads Writes Precharge Power-Down Clock Suspend Burst Read/Single Write
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
FUNCTIONAL BLOCK DIAGRAM SDRAM
CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1
COMMAND DECODE
MODE REGISTER
REFRESH COUNTER
ROWADDRESS
BANK0 ROWADDRESS LATCH DECODER
4096
BANK0 MEMORY ARRAY (4,096 1,024
SENSE AMPLIFIERS 4096
DATA OUTPUT REGISTER
A0-A11, BA0, ADDRESS REGISTER BANK CONTROL LOGIC
GATING MASK LOGIC READ DATA LATCH WRITE DRIVERS 1024 (x4)
DQ0-DQ3
DATA INPUT REGISTER
COLUMN DECODER COLUMNADDRESS COUNTER/ LATCH
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
FUNCTIONAL BLOCK DIAGRAM SDRAM
CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1
COMMAND DECODE
MODE REGISTER
REFRESH COUNTER
ROWADDRESS
BANK0 ROWADDRESS LATCH DECODER
4096
BANK0 MEMORY ARRAY (4,096
SENSE AMPLIFIERS
4096
DATA OUTPUT REGISTER
A0-A11, BA0,
ADDRESS REGISTER
BANK CONTROL LOGIC
GATING MASK LOGIC READ DATA LATCH WRITE DRIVERS
DQ0-DQ7
(x8)
DATA INPUT REGISTER
COLUMN DECODER COLUMNADDRESS COUNTER/ LATCH
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
FUNCTIONAL BLOCK DIAGRAM SDRAM
CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1
COMMAND DECODE
MODE REGISTER
REFRESH COUNTER
ROWADDRESS
BANK0 ROWADDRESS LATCH DECODER
4096
BANK0 MEMORY ARRAY (4,096
DQML, DQMH
SENSE AMPLIFIERS 4096
DATA OUTPUT REGISTER
A0-A11, BA0, ADDRESS REGISTER BANK CONTROL LOGIC
GATING MASK LOGIC READ DATA LATCH WRITE DRIVERS (x16)
DQ0-DQ15
DATA INPUT REGISTER
COLUMN DECODER COLUMNADDRESS COUNTER/ LATCH
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
DESCRIPTIONS
NUMBERS SYMBOL TYPE Input DESCRIPTION Clock: driven system clock. SDRAM input signals sampled positive edge CLK. also increments internal burst counter controls output registers. Clock Enable: activates (HIGH) deactivates (LOW) signal. Deactivating clock provides PRECHARGE POWER-DOWN SELF REFRESH operation (all banks idle), ACTIVE POWER-DOWN (row active bank) CLOCK SUSPEND operation (burst/access progress). synchronous except after device enters powerdown self refresh modes, where becomes asynchronous until after exiting same mode. input buffers, including CLK, disabled during power-down self refresh modes, providing standby power. tied HIGH. Chip Select: enables (registered LOW) disables (registered HIGH) command decoder. commands masked when registered HIGH. provides external bank selection systems with multiple banks. considered part command code. Command Inputs: WE#, CAS#, RAS# (along with CS#) define command being entered. Input/Output Mask: input mask signal write accesses output enable signal read accesses. Input data masked when sampled HIGH during WRITE cycle. output buffers placed High-Z state (two-clock latency) when sampled HIGH during READ cycle. DQML (Pin DQMH DQM. x16, DQML corresponds DQ0-DQ7 DQMH corresponds DQ8-DQ15. DQML DQMH considered same state when referenced DQM. Bank Address Inputs: define which bank ACTIVE, READ, WRITE PRECHARGE command being applied. Address Inputs: A0-A11 sampled during ACTIVE command (row-address A0-A11) READ/WRITE command (column-address A0A9 [x4]; A0-A8 [x8]; A0-A7 [x16]; with defining auto precharge) select location memory array respective bank. sampled during PRECHARGE command determine banks precharged (A10[HIGH]) bank selected BA0, (A1[LOW]). address inputs also provide op-code during LOAD MODE REGISTER command.
Input
Input
WE#, CAS#, RAS# x16: DQML, DQMH
Input Input
23-26, 29-34,
BA0, A0-A11
Input Input
DQ0-DQ15 x16: Data Input/Output: Data x4). DQ0-DQ7 Data Input/Output: Data x4). DQ0-DQ3 Data Input/Output: Data Connect: These pins should left unconnected. Address input (A12) 256Mb 512Mb devices
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
VDDQ VSSQ
Supply Power: Isolated power improved noise immunity. Supply Ground: Isolated ground improved noise immunity. Supply Power Supply: +3.3V ±0.3V. Supply Ground.
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64Mb: SDRAM
FUNCTIONAL DESCRIPTION
general, 64Mb SDRAMs banks, banks banks) quadbank DRAMs which operate 3.3V include synchronous interface (all signals registered positive edge clock signal, CLK). Each x4's 16,777,216-bit banks organized 4,096 rows 1,024 columns bits. Each x8's 16,777,216-bit banks organized 4,096 rows columns bits. Each x16's 16,777,216-bit banks organized 4,096 rows columns bits. Read write accesses SDRAM burst oriented; accesses start selected location continue programmed number locations programmed sequence. Accesses begin with registration ACTIVE command which then followed READ WRITE command. address bits registered coincident with ACTIVE command used select bank accessed (BA0 select bank, A0-A11 select row). address bits (x4: A0-A9; A0-A8; x16: A0-A7) registered coincident with READ WRITE command used select starting column location burst access. Prior normal operation, SDRAM must initialized. following sections provide detailed information covering device initialization, register definition, command descriptions device operation.
Register Definition
MODE REGISTER mode register used define specific mode operation SDRAM. This definition includes selection burst length, burst type, latency, operating mode write burst mode, shown Figure mode register programmed LOAD MODE REGISTER command will retain stored information until programmed again device loses power. Mode register bits M0-M2 specify burst length, specifies type burst (sequential interleaved), M4-M6 specify latency, specify operating mode, specifies WRITE burst mode, reserved future use. mode register must loaded when banks idle, controller must wait specified time before initiating subsequent operation. Violating either these requirements will result unspecified operation. Burst Length Read write accesses SDRAM burst oriented, with burst length being programmable, shown Figure burst length determines maximum number column locations that accessed given READ WRITE command. Burst lengths locations available both sequential interleaved burst types, fullpage burst available sequential type. full-page burst used conjunction with BURST TERMINATE command generate arbitrary burst lengths. Reserved states should used, unknown operation incompatibility with future versions result. When READ WRITE command issued, block columns equal burst length effectively selected. accesses that burst take place within this block, meaning that burst will wrap within block boundary reached. block uniquely selected A1-A9 (x4), A1-A8 (x8) A1-A7 (x16) when burst length two; A2-A9 (x4), A2-A8 (x8) A2-A7 (x16) when burst length four; A3-A9 (x4), A3-A8 (x8) A3-A7 (x16) when burst length eight. remaining (least significant) address bit(s) (are) used select starting location within block. Full-page bursts wrap within page boundary reached.
Initialization
SDRAMs must powered initialized predefined manner. Operational procedures other than those specified result undefined operation. Once power applied VDDQ (simultaneously) clock stable (stable clock defined signal cycling within timing constraints specified clock pin), SDRAM requires 100µs delay prior issuing command other than COMMAND INHIBIT NOP. Starting some point during this 100µs period continuing least through this period, COMMAND INHIBIT commands should applied. Once 100µs delay been satisfied with least COMMAND INHIBIT command having been applied, PRECHARGE command should applied. banks must precharged, thereby placing device banks idle state. Once idle state, AUTO REFRESH cycles must performed. After AUTO REFRESH cycles complete, SDRAM ready mode register programming. Because mode register will power unknown state, should loaded prior applying operational command.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
Burst Type Accesses within given burst programmed either sequential interleaved; this referred burst type selected ordering accesses within burst determined burst length, burst type starting column address, shown Table
Table Burst Definition
Burst Length Starting Column Order Accesses Within Burst Address Type Sequential Type Interleaved A0-A9/8/7 (location 0-y) 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Supported
Figure Mode Register Definition
Address
Mode Register (Mx)
Reserved*
Mode
Latency
Burst Length
*Should program M11, ensure compatibility with future devices.
Burst Length Reserved Reserved Reserved Full Page Reserved Reserved Reserved Reserved
Full Page
Burst Type Sequential Interleaved
Latency Reserved Reserved Reserved Reserved Reserved Reserved
M6-M0 Defined
Operating Mode Standard Operation other states reserved
NOTE: full-page accesses: 1,024 (x4); (x8); (x16). burst length two, A1-A9 (x4), A1-A8 (x8), A1-A7 (x16) select block-of-two burst; selects starting column within block. burst length four, A2-A9 (x4), A2-A8 (x8), A2-A7 (x16) select block-of-four burst; A0A1 select starting column within block. burst length eight, A3-A9 (x4), A3-A8 (x8), A3-A7 (x16) select block-of-eight burst; A0A2 select starting column within block. full-page burst, full selected A0-A9 (x4), A0-A8 (x8), A0-A7 (x16) select starting column. Whenever boundary block reached within given sequence above, following access wraps within block. burst length one, A0-A9 (x4), A0-A8 (x8), A0-A7 (x16) select unique column accessed, mode register ignored.
Write Burst Mode Programmed Burst Length Single Location Access
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
Latency latency delay, clock cycles, between registration READ command availability first piece output data. latency three clocks. READ command registered clock edge latency clocks, data will available clock edge will start driving result clock edge cycle earlier provided that relevant access times met, data will valid clock edge example, assuming that clock cycle time such that relevant access times met, READ command registered latency programmed clocks, will start driving after data will valid shown Figure Table indicates operating frequencies which each latency setting used. Reserved states should used unknown operation incompatibility with future versions result. Operating Mode normal operating mode selected setting zero; other combinations values reserved future and/or test modes. programmed burst length applies both READ WRITE bursts. Test modes reserved states should used because unknown operation incompatibility with future versions result. Write Burst Mode When burst length programmed M0-M2 applies both READ WRITE bursts; when programmed burst length applies READ bursts, write accesses single-location (nonburst) accesses.
Table Latency
ALLOWABLE OPERATING FREQUENCY (MHz) SPEED LATENCY LATENCY
Figure Latency
COMMAND
READ
DOUT
Latency
COMMAND
READ
DOUT
Latency
DON'T CARE UNDEFINED
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
Commands
Truth Table provides quick reference available commands. This followed written description each command. Three additional Truth Tables appear following Operation section; these tables provide current state/next state information.
TRUTH TABLE COMMANDS OPERATION
(Note: NAME (FUNCTION) COMMAND INHIBIT (NOP) OPERATION (NOP) ACTIVE (Select bank activate row) READ (Select bank column, start READ burst) WRITE (Select bank column, start WRITE burst) BURST TERMINATE PRECHARGE (Deactivate bank banks) AUTO REFRESH SELF REFRESH (Enter self refresh mode) LOAD MODE REGISTER Write Enable/Output Enable Write Inhibit/Output High-Z
NOTE:
RAS# CAS# L/H8 L/H8
ADDR Bank/Row Bank/Col Bank/Col Code Op-Code
Valid Active Active High-Z
NOTES
HIGH commands shown except SELF REFRESH. A0-A11 define op-code written mode register. A0-A11 provide address, BA0, determine which bank made active. A0-A9 (x4), A0-A8 (x8), A0-A7 (x16) provide column address; (HIGH) enables auto precharge feature (nonpersistent), while (LOW) disables auto precharge feature; BA0, determine which bank being read from written (LOW): BA0, determine bank being precharged. HIGH: banks precharged BA0, "Don't Care." This command AUTO REFRESH (HIGH), SELF REFRESH LOW. Internal refresh counter controls addressing; inputs I/Os "Don't Care" except CKE. Activates deactivates during WRITEs (zero-clock delay) READs (two-clock delay).
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
COMMAND INHIBIT COMMAND INHIBIT function prevents commands from being executed SDRAM, regardless whether signal enabled. SDRAM effectively deselected. Operations already progress affected. OPERATION (NOP) OPERATION (NOP) command used perform SDRAM which selected (CS# LOW). This prevents unwanted commands from being registered during idle wait states. Operations already progress affected. LOAD MODE REGISTER mode register loaded inputs A0-A11. mode register heading Register Definition section. LOAD MODE REGISTER command only issued when banks idle, subsequent executable command cannot issued until tMRD met. ACTIVE ACTIVE command used open activate) particular bank subsequent access. value BA0, inputs selects bank, address provided inputs A0-A11 selects row. This remains active open) accesses until PRECHARGE command issued that bank. PRECHARGE command must issued before opening different same bank. READ READ command used initiate burst read access active row. value BA0, inputs selects bank, address provided inputs A0-A9 (x4), A0-A8 (x8), A0-A7 (x16) selects starting column location. value input determines whether auto precharge used. auto precharge selected, being accessed will precharged READ burst; auto precharge selected, will remain open subsequent accesses. Read data appears subject logic level inputs clocks earlier. given signal registered HIGH, corresponding will High-Z clocks later; signal registered LOW, will provide valid data. WRITE WRITE command used initiate burst write access active row. value BA0, inputs selects bank, address provided inputs A0-A9 (x4), A0-A8 (x8), A0-A7 (x16) selects starting column location. value input determines whether auto precharge used. auto
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
precharge selected, being accessed will precharged WRITE burst; auto precharge selected, will remain open subsequent accesses. Input data appearing written memory array subject input logic level appearing coincident with data. given signal registered LOW, corresponding data will written memory; signal registered HIGH, corresponding data inputs will ignored, WRITE will executed that byte/column location. PRECHARGE PRECHARGE command used deactivate open particular bank open banks. bank(s) will available subsequent access specified time (tRP) after PRECHARGE command issued. Input determines whether banks precharged, case where only bank precharged, inputs BA0, select bank. Otherwise BA0, treated "Don't Care." Once bank been precharged, idle state must activated prior READ WRITE commands being issued that bank. AUTO PRECHARGE Auto precharge feature which performs same individual-bank PRECHARGE function described above, without requiring explicit command. This accomplished using enable auto precharge conjunction with specific READ WRITE command. precharge bank/row that addressed with READ WRITE command automatically performed upon completion READ WRITE burst, except full-page burst mode, where auto precharge does apply. Auto precharge nonpersistent that either enabled disabled each individual READ WRITE command. Auto precharge ensures that precharge initiated earliest valid stage within burst. user must issue another command same bank until precharge time (tRP) completed. This determined explicit PRECHARGE command issued earliest possible time, described each burst type Operation section this data sheet. BURST TERMINATE BURST TERMINATE command used truncate either fixed-length full-page bursts. most recently registered READ WRITE command prior BURST TERMINATE command will truncated, shown Operation section this data sheet.
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64Mb: SDRAM
AUTO REFRESH AUTO REFRESH used during normal operation SDRAM analagous CAS#-BEFORE-RAS# (CBR) REFRESH conventional DRAMs. This command nonpersistent, must issued each time refresh required. active banks must PRECHARGED prior issuing AUTO REFRESH command. AUTO REFRESH command should issued until minimum been after PRECHARGE command shown operation section. addressing generated internal refresh controller. This makes address bits "Don't Care" during AUTO REFRESH command. 64Mb SDRAM requires 4,096 AUTO REFRESH cycles every 64ms (tREF), regardless width option. Providing distributed AUTO REFRESH command every 15.625µs will meet refresh requirement ensure that each refreshed. Alternatively, 4,096 AUTO REFRESH commands issued burst minimum cycle rate (tRC), once every 64ms. SELF REFRESH SELF REFRESH command used retain data SDRAM, even rest system powered down. When self refresh mode, SDRAM retains data without external clocking. SELF REFRESH command initiated like AUTO REFRESH command except disabled (LOW). Once SELF REFRESH command registered, inputs SDRAM become "Don't Care," with exception CKE, which must remain LOW. Once self refresh mode engaged, SDRAM provides internal clocking, causing perform AUTO REFRESH cycles. SDRAM must remain self refresh mode minimum period equal tRAS remain self refresh mode indefinite period beyond that. procedure exiting self refresh requires sequence commands. First, must stable (stable clock defined signal cycling within timing constraints specified clock pin) prior going back HIGH. Once HIGH, SDRAM must have commands issued minimum clocks) tXSR, because time required completion internal refresh progress. Upon exiting self refresh mode, AUTO REFRESH commands must issued every 15.625µs less both SELF REFRESH AUTO REFRESH utilize refresh counter.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
Operation
BANK/ROW ACTIVATION Before READ WRITE commands issued bank within SDRAM, that bank must "opened." This accomplished ACTIVE command, which selects both bank activated (see Figure After opening (issuing ACTIVE command), READ WRITE command issued that row, subject tRCD specification. tRCD (MIN) should divided clock period rounded next whole number determine earliest clock edge after ACTIVE command which READ WRITE command entered. example, tRCD specification 20ns with clock (8ns period) results clocks, rounded This reflected Figure which covers case where tRCD (MIN)/tCK (The same procedure used convert other specification limits from time units clock cycles). subsequent ACTIVE command different same bank only issued after previous active been "closed" (precharged). minimum time interval between successive ACTIVE commands same bank defined tRC. subsequent ACTIVE command another bank issued while first bank being accessed, which results reduction total row-access overhead. minimum time interval between successive ACTIVE commands different banks defined tRRD.
Figure Activating Specific Specific Bank
HIGH
RAS#
CAS#
A0-A10,
ADDRESS
BA0,
BANK ADDRESS
Example: Meeting
tRCD
Figure (MIN) When tRCD (MIN)/tCK
COMMAND
ACTIVE
READ WRITE
tRCD
DON'T CARE
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
READs READ bursts initiated with READ command, shown Figure starting column bank addresses provided with READ command, auto precharge either enabled disabled that burst access. auto precharge enabled, being accessed precharged completion burst. generic READ commands used following illustrations, auto precharge disabled. During READ bursts, valid data-out element from starting column address will available following latency after READ command. Each subsequent data-out element will valid next positive clock edge. Figure shows general timing each possible latency setting. Upon completion burst, assuming other commands have been initiated, will High-Z. full-page burst will continue until terminated. page, will wrap column continue.) Data from READ burst truncated with subsequent READ command, data from fixedlength READ burst immediately followed data from READ command. either case, continuous flow data maintained. first data element from burst follows either last element completed burst last desired data element longer burst which being truncated. READ command should issued cycles
Figure READ Command
Figure Latency
HIGH
COMMAND
READ
DOUT
RAS#
Latency
CAS#
COMMAND READ DOUT Latency DON'T CARE
A0-A9: A0-A8: A0-A7: A11: A11: A11:
COLUMN ADDRESS
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE BANK ADDRESS
UNDEFINED
BA0,1
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
before clock edge which last desired data element valid, where equals latency minus one. This shown Figure latencies three; data element either last burst four last desired longer burst. 64Mb SDRAM uses pipelined architecture therefore does require rule associated with prefetch architecture. READ command initiated clock cycle following previous READ command. Fullspeed random read accesses performed same bank, shown Figure each subsequent READ performed different bank.
Figure Consecutive READ Bursts
COMMAND
READ
READ
cycle
ADDRESS
BANK,
BANK,
Latency
DOUT
DOUT
DOUT
DOUT
DOUT
COMMAND
READ
READ
cycles
ADDRESS
BANK,
BANK,
Latency
DOUT
DOUT
DOUT
DOUT
DOUT
TRANSITIONING DATA
DON'T CARE
NOTE: Each READ command bank. LOW.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
Figure Random READ Accesses
COMMAND
READ
READ
READ
READ
ADDRESS
BANK,
BANK,
BANK,
BANK,
Latency
DOUT
DOUT
DOUT
DOUT
COMMAND
READ
READ
READ
READ
ADDRESS
BANK,
BANK,
BANK,
BANK,
Latency
DOUT
DOUT
DOUT
DOUT
TRANSITIONING DATA NOTE: Each READ command bank. LOW.
DON'T CARE
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
Data from READ burst truncated with subsequent WRITE command, data from fixedlength READ burst immediately followed data from WRITE command (subject turnaround limitations). WRITE burst initiated clock edge immediately following last last desired) data element from READ burst, provided that contention avoided. given system design, there possibility that device driving input data will Low-Z before SDRAM High-Z. this case, least single-cycle delay should occur between last read data WRITE command. input used avoid contention, shown Figures signal must asserted (HIGH) least clocks prior WRITE command (DQM latency clocks output buffers) suppress data-out from READ. Once WRITE command registered, will High-Z remain High-Z), regardless state signal, provided active clock just prior WRITE command that truncated READ command. not, second WRITE will invalid WRITE. example, during Figure then WRITEs would valid, while WRITE would invalid. signal must de-asserted prior WRITE command (DQM latency zero clocks input buffers) ensure that written data masked. Figure shows case where clock frequency allows contention avoided without adding cycle, Figure shows case where additional needed.
Figure READ WRITE
Figure READ WRITE With Extra Clock Cycle
COMMAND ADDRESS
READ
WRITE
COMMAND ADDRESS
READ
WRITE
BANK,
BANK,
BANK,
BANK,
DOUT
DOUT
TRANSITIONING DATA NOTE: DON'T CARE
TRANSITIONING DATA NOTE:
DON'T CARE
latency three used illustration. READ command bank, WRITE command bank. burst used, then required.
latency three used illustration. READ command bank, WRITE command bank.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
fixed-length READ burst followed truncated with, PRECHARGE command same bank (provided that auto precharge activated), full-page burst truncated with PRECHARGE command same bank. PRECHARGE command should issued cycles before clock edge which last desired data element valid, where equals latency minus one. This shown Figure each possible latency; data element either last burst four last desired longer burst. Following PRECHARGE command, subsequent command same bank cannot issued until met. Note that part precharge time hidden during access last data element(s). case fixed-length burst being executed completion, PRECHARGE command issued optimum time described above) provides same operation that would result from same fixed-length burst with auto precharge. disadvantage
Figure READ PRECHARGE
COMMAND
READ
PRECHARGE cycle
ACTIVE
ADDRESS
BANK
BANK all)
BANK
Latency
DOUT
DOUT
DOUT
DOUT
COMMAND
READ
PRECHARGE
ACTIVE
cycles
ADDRESS
BANK
BANK all)
BANK
Latency
DOUT
DOUT
DOUT
DOUT
TRANSITIONING DATA NOTE: LOW.
DON'T CARE
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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64Mb: SDRAM
PRECHARGE command that requires that command address buses available appropriate time issue command; advantage PRECHARGE command that used truncate fixed-length full-page bursts. Full-page READ bursts truncated with BURST TERMINATE command, fixed-length READ bursts truncated with BURST TERMINATE command, provided that auto precharge activated. BURST TERMINATE command should issued cycles before clock edge which last desired data element valid, where equals latency minus one. This shown Figure each possible latency; data element last desired data element longer burst.
Figure Terminating READ Burst
COMMAND
READ
BURST TERMINATE cycle
ADDRESS
BANK,
Latency
DOUT
DOUT
DOUT
DOUT
COMMAND
READ
BURST TERMINATE
cycles
ADDRESS
BANK,
Latency
DOUT
DOUT
DOUT
DOUT
TRANSITIONING DATA NOTE: LOW.
DON'T CARE
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WRITEs WRITE bursts initiated with WRITE command, shown Figure starting column bank addresses provided with WRITE command, auto precharge either enabled disabled that access. auto precharge enabled, being accessed precharged completion burst. generic WRITE commands used following illustrations, auto precharge disabled. During WRITE bursts, first valid data-in element will registered coincident with WRITE command. Subsequent data elements will registered each successive positive clock edge. Upon completion fixed-length burst, assuming other commands have been initiated, will remain High-Z additional input data will ignored (see Figure 14). full-page burst will continue until terminated. page, will wrap column continue.) Data WRITE burst truncated with subsequent WRITE command, data fixedlength WRITE burst immediately followed data WRITE command. WRITE command issued clock following previous WRITE command, data provided coincident with command applies command. example shown Figure Data either last burst last desired longer burst. 64Mb SDRAM uses pipelined architecture therefore does require rule associated with prefetch architecture. WRITE command initiated clock cycle following previous WRITE command. Full-speed random write accesses within page performed same bank, shown Figure each subsequent WRITE performed different bank.
Figure WRITE Burst
COMMAND
WRITE
ADDRESS
BANK,
Figure WRITE Command
HIGH
TRANSITIONING DATA
DON'T CARE
NOTE: Burst length LOW.
Figure WRITE WRITE
RAS#
CAS#
COMMAND
WRITE
WRITE
ADDRESS
A0-A9: A0-A8: A0-A7: A11: A11: A11:
ENABLE AUTO PRECHARGE COLUMN ADDRESS
BANK,
BANK,
TRANSITIONING DATA
DON'T CARE
DISABLE AUTO PRECHARGE
NOTE: LOW. Each WRITE command bank.
BA0,1
BANK ADDRESS
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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Data WRITE burst truncated with subsequent READ command, data fixedlength WRITE burst immediately followed subsequent READ command. Once READ command registered, data inputs will ignored, WRITEs will executed. example shown Figure Data either last burst last desired longer burst. Data fixed-length WRITE burst followed truncated with, PRECHARGE command same bank (provided that auto precharge activated), full-page WRITE burst truncated with PRECHARGE command same bank. PRECHARGE command should issued
Figure Random WRITE Cycles
after clock edge which last desired input data element registered. auto precharge mode requires least clock plus time, regardless frequency. addition, when truncating WRITE burst, signal must used mask input data clock edge prior clock edge coincident with, PRECHARGE command. example shown Figure Data either last burst last desired longer burst. Following PRECHARGE command, subsequent command same bank cannot issued until met. case fixed-length burst being executed completion, PRECHARGE command issued optimum time described above) provides same operation that would result from same fixed-length burst with auto precharge. disadvantage PRECHARGE command that requires that command address buses available appropriate time issue command; advantage PRECHARGE command that used truncate fixed-length full-page bursts.
COMMAND
WRITE
WRITE
WRITE
WRITE
Figure WRITE PRECHARGE
ADDRESS
BANK,
BANK,
BANK,
BANK,
tCLK 15ns
TRANSITIONING DATA
DON'T CARE
COMMAND
WRITE
PRECHARGE
ACTIVE
Figure WRITE READ
ADDRESS
BANK
BANK all)
BANK
tCLK 15ns
COMMAND
WRITE
READ
COMMAND
BANK,
WRITE
PRECHARGE
ACTIVE
ADDRESS
BANK,
ADDRESS
BANK
BANK all)
BANK
DOUT
DOUT
TRANSITIONING DATA
DON'T CARE
TRANSITIONING DATA
DON'T CARE
NOTE: could remain this example WRITE burst fixed length two.
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Fixed-length full-page WRITE bursts truncated with BURST TERMINATE command. When truncating WRITE burst, input data applied coincident with BURST TERMINATE command will ignored. last data written (provided that that time) will input data applied clock previous BURST TERMINATE command. This shown Figure where data last desired data element longer burst. PRECHARGE PRECHARGE command (Figure used deactivate open particular bank open banks. bank(s) will available subsequent access some specified time (tRP) after PRECHARGE command issued. Input determines whether banks precharged, case where only bank precharged, inputs BA0, select bank. When banks precharged, inputs BA0, treated "Don't Care." Once bank been precharged, idle state must activated prior READ WRITE commands being issued that bank. POWER-DOWN Power-down occurs registered coincident with COMMAND INHIBIT when accesses progress. power-down occurs when banks idle, this mode referred precharge power-down; power-down occurs when there active bank, this mode referred active power-down. Entering power-down deactivates input output buffers, excluding CKE, maximum power savings while standby. device remain power-down state longer than refresh period (64ms) since refresh operations performed this mode. power-down state exited registering COMMAND INHIBIT HIGH desired clock edge (meeting tCKS). Figure
Figure Terminating WRITE Burst
COMMAND
WRITE
BURST TERMINATE
NEXT COMMAND
ADDRESS
BANK,
(ADDRESS)
(DATA)
TRANSITIONING DATA NOTE: DQMs LOW.
DON'T CARE
Figure PRECHARGE Command
HIGH
Figure Power-Down
tCKS
tCKS
RAS#
COMMAND
ACTIVE
banks idle
CAS#
Input buffers gated Enter power-down mode. Exit power-down mode.
tRCD tRAS DON'T CARE
A0-A9
Banks
Bank Selected
BA0,1
BANK ADDRESS
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
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CLOCK SUSPEND clock suspend mode occurs when column access/burst progress registered LOW. clock suspend mode, internal clock deactivated, "freezing" synchronous logic. each positive clock edge which sampled LOW, next internal positive clock edge suspended. command data present input pins time suspended internal clock edge ignored; data present pins remains driven; burst counters incremented, long clock suspended. (See examples Figures 23.) Clock suspend mode exited registering HIGH; internal clock related operation will resume subsequent positive clock edge. BURST READ/SINGLE WRITE burst read/single write mode entered programming write burst mode (M9) mode register logic this mode, WRITE commands result access single column location (burst one), regardless programmed burst length. READ commands access columns according programmed burst length sequence, just normal mode operation
Figure Clock Suspend During WRITE Burst
Figure Clock Suspend During READ Burst
INTERNAL CLOCK
INTERNAL CLOCK
WRITE
COMMAND
COMMAND
BANK,
READ
ADDRESS
ADDRESS
BANK,
DOUT
DOUT
DOUT
DOUT
TRANSITIONING DATA
DON'T CARE
TRANSITIONING DATA
DON'T CARE
NOTE: this example, latency burst length greater, LOW.
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CONCURRENT AUTO PRECHARGE access command (READ WRITE) another bank while access command with auto precharge enabled executing allowed SDRAMs, unless SDRAM supports CONCURRENT AUTO PRECHARGE. Micron SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO PRECHARGE occurs defined below. READ with Auto Precharge Interrupted READ (with without auto precharge): READ bank will interrupt READ bank latency later. PRECHARGE bank will begin when READ bank registered (Figure 24). Interrupted WRITE (with without auto precharge): WRITE bank will interrupt READ bank when registered. should used clocks prior WRITE command prevent contention. PRECHARGE bank will begin when WRITE bank registered (Figure 25).
Figure READ With Auto Precharge Interrupted READ
READ BANK READ BANK
COMMAND BANK
Page Active
READ with Burst
Interrupt Burst, Precharge BANK
Idle BANK Precharge
Internal States
BANK
Page Active
READ with Burst
ADDRESS
BANK
BANK DOUT DOUT DOUT DOUT
Latency (BANK Latency (BANK
NOTE: LOW.
TRANSITIONING DATA
DON'T CARE
Figure READ With Auto Precharge Interrupted WRITE
READ BANK Page Active WRITE BANK
COMMAND BANK
READ with Burst
Interrupt Burst, Precharge BANK
Idle BANK Write-Back
Internal States
BANK
BANK
Page Active
WRITE with Burst
ADDRESS
BANK
DOUT Latency (BANK
TRANSITIONING DATA
DON'T CARE
NOTE: HIGH prevent DOUT-a+1 from contending with DIN-d
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WRITE with Auto Precharge Interrupted READ (with without auto precharge): READ bank will interrupt WRITE bank when registered, with data-out appearing latency later. PRECHARGE bank will begin after met, where begins when READ bank registered. last valid WRITE bank will data-in registered clock prior READ bank (Figure 26). Interrupted WRITE (with without auto precharge): WRITE bank will interrupt WRITE bank when registered. PRECHARGE bank will begin after met, where begins when WRITE bank registered. last valid data WRITE bank will data registered clock prior WRITE bank (Figure 27).
Figure WRITE With Auto Precharge Interrupted READ
WRITE BANK READ BANK
COMMAND BANK
Page Active
WRITE with Burst
Interrupt Burst, Write-Back BANK
Precharge BANK BANK
Internal States
BANK
Page Active
READ with Burst
ADDRESS
BANK
BANK DOUT Latency (BANK DOUT
NOTE: LOW.
TRANSITIONING DATA
DON'T CARE
Figure WRITE With Auto Precharge Interrupted WRITE
WRITE BANK WRITE BANK
COMMAND BANK
Page Active
WRITE with Burst
Interrupt Burst, Write-Back BANK
Precharge BANK BANK Write-Back
Internal States
BANK
Page Active
WRITE with Burst
ADDRESS
BANK
BANK
TRANSITIONING DATA NOTE: LOW.
DON'T CARE
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TRUTH TABLE
(Notes: 1-4) CKEn-1 CKEn CURRENT STATE Power-Down Self Refresh Clock Suspend Power-Down Self Refresh Clock Suspend Banks Idle Banks Idle Reading Writing
NOTE:
COMMANDn COMMAND INHIBIT COMMAND INHIBIT COMMAND INHIBIT AUTO REFRESH VALID Truth Table
ACTIONn Maintain Power-Down Maintain Self Refresh Maintain Clock Suspend Exit Power-Down Exit Self Refresh Exit Clock Suspend Power-Down Entry Self Refresh Entry Clock Suspend Entry
NOTES
CKEn logic state clock edge CKEn-1 state previous clock edge. Current state state SDRAM immediately prior clock edge COMMANDn command registered clock edge ACTIONn result COMMANDn. states sequences shown illegal reserved. Exiting power-down clock edge will device banks idle state time clock edge (provided that tCKS met). Exiting self refresh clock edge will device banks idle state once tXSR met. COMMAND INHIBIT commands should issued clock edges occurring during tXSR period. minimum commands must provided during tXSR period. After exiting clock suspend clock edge device will resume operation recognize next command clock edge
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TRUTH TABLE CURRENT STATE BANK COMMAND BANK
(Notes: 1-6; notes appear below next page) CURRENT STATE RAS#CAS# Idle Active Read (Auto Precharge Disabled) Write (Auto Precharge Disabled) COMMAND (ACTION) COMMAND INHIBIT (NOP/Continue previous operation) OPERATION (NOP/Continue previous operation) ACTIVE (Select activate row) AUTO REFRESH LOAD MODE REGISTER PRECHARGE READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE (Deactivate bank banks) READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE (Truncate READ burst, start PRECHARGE) BURST TERMINATE READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE (Truncate WRITE burst, start PRECHARGE) BURST TERMINATE NOTES
NOTE: This table applies when CKEn-1 HIGH CKEn HIGH (see Truth Table after tXSR been previous state self refresh). This table bank-specific, except where noted; i.e., current state specific bank commands shown those allowed issued that bank when that state. Exceptions covered notes below. Current state definitions: Idle: bank been precharged, been met. Active: bank been activated, tRCD been met. data bursts/accesses register accesses progress. Read: READ burst been initiated, with auto precharge disabled, terminated been terminated. Write: WRITE burst been initiated, with auto precharge disabled, terminated been terminated. following states must interrupted command issued same bank. COMMAND INHIBIT commands, allowable commands other bank should issued clock edge occurring during these states. Allowable commands other bank determined current state Truth Table according Truth Table Precharging: Starts with registration PRECHARGE command ends when met. Once met, bank will idle state. Activating: Starts with registration ACTIVE command ends when tRCD met. Once tRCD met, bank will active state. Read w/Auto Precharge Enabled: Starts with registration READ command with auto precharge enabled ends when been met. Once met, bank will idle state. Write w/Auto Precharge Enabled: Starts with registration WRITE command with auto precharge enabled ends when been met. Once met, bank will idle state.
(Continued next page)
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NOTE (continued):
following states must interrupted executable command; COMMAND INHIBIT commands must applied each positive clock edge during these states. Refreshing: Starts with registration AUTO REFRESH command ends when met. Once met, SDRAM will banks idle state. Accessing Mode Register: Starts with registration LOAD MODE REGISTER command ends when tMRD been met. Once tMRD met, SDRAM will banks idle state. Precharging All: Starts with registration PRECHARGE command ends when met. Once met, banks will idle state. states sequences shown illegal reserved. bank-specific; requires that banks idle. bank-specific; banks precharged, must valid state precharging. bank-specific; BURST TERMINATE affects most recent READ WRITE burst, regardless bank. READs WRITEs listed Command (Action) column include READs WRITEs with auto precharge enabled READs WRITEs with auto precharge disabled. Does affect state bank acts that bank.
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TRUTH TABLE CURRENT STATE BANK COMMAND BANK
(Notes: 1-6; notes appear below next page) CURRENT STATE RAS# CAS# Idle Activating, Active, Precharging Read (Auto Precharge Disabled) Write (Auto Precharge Disabled) Read (With Auto Precharge) Write (With Auto Precharge) COMMAND (ACTION) COMMAND INHIBIT (NOP/Continue previous operation) OPERATION (NOP/Continue previous operation) Command Otherwise Allowed Bank ACTIVE (Select activate row) READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE ACTIVE (Select activate row) READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE ACTIVE (Select activate row) READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE ACTIVE (Select activate row) READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE ACTIVE (Select activate row) READ (Select column start READ burst) WRITE (Select column start WRITE burst) PRECHARGE NOTES
NOTE: This table applies when CKEn-1 HIGH CKEn HIGH (see Truth Table after tXSR been previous state self refresh). This table describes alternate bank operation, except where noted; i.e., current state bank commands shown those allowed issued bank (assuming that bank such state that given command allowable). Exceptions covered notes below. Current state definitions: Idle: bank been precharged, been met. Active: bank been activated, tRCD been met. data bursts/accesses register accesses progress. Read: READ burst been initiated, with auto precharge disabled, terminated been terminated. Write: WRITE burst been initiated, with auto precharge disabled, terminated been terminated. Read w/Auto Precharge Enabled: Starts with registration READ command with auto precharge enabled, ends when been met. Once met, bank will idle state. Write w/Auto Precharge Enabled: Starts with registration WRITE command with auto precharge enabled, ends when been met. Once met, bank will idle state.
(Continued next page)
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NOTE (continued):
AUTO REFRESH, SELF REFRESH LOAD MODE REGISTER commands only issued when banks idle. BURST TERMINATE command cannot issued another bank; applies bank represented current state only. states sequences shown illegal reserved. READs WRITEs bank listed Command (Action) column include READs WRITEs with auto precharge enabled READs WRITEs with auto precharge disabled. CONCURRENT AUTO PRECHARGE: Bank will initiate auto precharge command when burst been interrupted bank burst. Burst bank continues initiated. READ without auto precharge interrupted READ (with without auto precharge), READ bank will interrupt READ bank latency later (Figure READ without auto precharge interrupted WRITE (with without auto precharge), WRITE bank will interrupt READ bank when registered (Figures 10). should used clock prior WRITE command prevent contention. WRITE without auto precharge interrupted READ (with without auto precharge), READ bank will interrupt WRITE bank when registered (Figure 17), with data-out appearing latency later. last valid WRITE bank will data-in registered clock prior READ bank WRITE without auto precharge interrupted WRITE (with without auto precharge), WRITE bank will interrupt WRITE bank when registered (Figure 15). last valid WRITE bank will data-in registered clock prior READ bank READ with auto precharge interrupted READ (with without auto precharge), READ bank will interrupt READ bank latency later. PRECHARGE bank will begin when READ bank registered (Figure 24). READ with auto precharge interrupted WRITE (with without auto precharge), WRITE bank will interrupt READ bank when registered. should used clocks prior WRITE command prevent contention. PRECHARGE bank will begin when WRITE bank registered (Figure 25). WRITE with auto precharge interrupted READ (with without auto precharge), READ bank will interrupt WRITE bank when registered, with data-out appearing latency later. PRECHARGE bank will begin after met, where begins when READ bank registered. last valid WRITE bank will data-in registered clock prior READ bank (Figure 26). WRITE with auto precharge interrupted WRITE (with without auto precharge), WRITE bank will interrupt WRITE bank when registered. PRECHARGE bank will begin after met, where begins when WRITE bank registered. last valid WRITE bank will data registered clock prior WRITE bank (Figure 27).
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ABSOLUTE MAXIMUM RATINGS*
Voltage VDD, VDDQ Supply Relative +4.6V Voltage Inputs, Pins Relative +4.6V Operating Temperature, (commercial) +70°C Operating Temperature, (extended; parts) -40°C +85°C Storage Temperature (plastic) -55°C +150°C Power Dissipation *Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only, functional operation device these other conditions above those indicated operational sections this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
ELECTRICAL CHARACTERISTICS OPERATING CONDITIONS
(Notes: notes appear page 35); VDD, VDDQ +3.3V ±0.3V PARAMETER/CONDITION Supply Voltage Input High Voltage: Logic inputs Input Voltage: Logic inputs Input Leakage Current: input (All other pins under test Output Leakage Current: disabled; VOUT VDDQ Output Levels: Output High Voltage (IOUT -4mA) Output Voltage (IOUT 4mA) SYMBOL VDD, VDDQ -0.3 UNITS NOTES
SPECIFICATIONS CONDITIONS
(Notes: notes appear page VDD, VDDQ +3.3V ±0.3V PARAMETER/CONDITION Operating Current: Active Mode; Burst READ WRITE; (MIN) Standby Current: Power-Down Mode; banks idle; Standby Current: Active Mode; HIGH; HIGH; banks active after tRCD met; accesses progress Operating Current: Burst Mode; Page burst; READ WRITE; banks active Auto Refresh Current: HIGH; HIGH Self Refresh Current: 0.2V
tRFC tRFC
SYMBOL IDD1 IDD2 IDD3
UNITS NOTES
IDD4 IDD5 IDD6 IDD7
tRFC (MIN) 15.625µs
Standard power
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CAPACITANCE
(Note: notes appear page PARAMETER Input Capacitance: Input Capacitance: other input-only pins Input/Output Capacitance: SYMBOL UNITS NOTES
ELECTRICAL CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS
(Notes: notes appear page 35); VDD, VDDQ +3.3V ±0.3V
CHARACTERISTICS PARAMETER Access time from (pos. edge) Address hold time Address setup time high-level width low-level width Clock cycle time SYMBOL UNITS NOTES tAC(3) tAC(2) tCK(3) tCK(2) tCKH tCKS tCMH tCMS tHZ(3) tHZ(2) tRAS 120,000 120,000 120,000 120,000 tRCD tREF tRFC tRRD 7.5ns tXSR
hold time setup time CS#, RAS#, CAS#, WE#, hold time CS#, RAS#, CAS#, WE#, setup time Data-in hold time Data-in setup time Data-out high-impedance time Data-out low-impedance time Data-out hold time (load) Data-out hold time load) ACTIVE PRECHARGE command ACTIVE ACTIVE command period ACTIVE READ WRITE delay Refresh period (4,096 rows) AUTO REFRESH period PRECHARGE command period ACTIVE bank ACTIVE bank command Transition time WRITE recovery time
Exit SELF REFRESH ACTIVE command
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FUNCTIONAL CHARACTERISTICS
(Notes: notes appear page VDD, VDDQ +3.3V ±0.3V
PARAMETER READ/WRITE command READ/WRITE command clock disable power-down entry mode clock enable power-down exit setup mode input data delay data mask during WRITEs data high-impedance during READs WRITE command input data delay Data-in ACTIVE command Data-in PRECHARGE command Last data-in burst STOP command Last data-in READ/WRITE command Last data-in PRECHARGE command LOAD MODE REGISTER command ACTIVE REFRESH command Data-out high-impedance from PRECHARGE command SYMBOL tCCD tCKED tPED tDQD tDQM tDQZ tDWD tDAL tDPL tBDL tCDL tRDL tMRD tROH(3) tROH(2) UNITS NOTES
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NOTES
voltages referenced VSS. This parameter sampled. VDD, VDDQ +3.3V; MHz, 25°C; under test biased 1.4V. dependent output loading cycle rates. Specified values obtained with minimum cycle time outputs open. Enables on-chip refresh address counters. minimum specifications used only indicate cycle time which proper operation over full temperature range (0°C +70°C -40°C +85°C parts) ensured. initial pause 100µs required after powerup, followed AUTO REFRESH commands, before proper device operation ensured. (VDD VDDQ must powered simultaneously. VSSQ must same potential.) AUTO REFRESH command wake-ups should repeated time tREF refresh requirement exceeded. characteristics assume 1ns. addition meeting transition rate specification, clock must transit between between VIH) monotonic manner. Outputs measured 1.5V with equivalent load: specifications tested after device properly initialized. Timing actually specified tCKS; clock(s) specified reference only minimum cycle rate. Timing actually specified plus tRP; clock(s) specified reference only minimum cycle rate. Timing actually specified tWR. Required clocks specified JEDEC functionality dependent timing parameter. current will increase decrease proportionally according amount frequency alteration test condition. Address transitions average transition every clocks. must toggled minimum times during this period. Based 10ns tCK=7.5ns -7E, overshoot: (MAX) VDDQ pulse width 3ns, pulse width cannot greater than third cycle rate. undershoot: (MIN) pulse width 3ns. clock frequency must remain constant (stable clock defined signal cycling within timing constraints specified clock pin) during access precharge states (READ, WRITE, including tWR, PRECHARGE commands). used reduce data rate. Auto precharge mode only. precharge timing budget (tRP) begins 6ns/7ns/7.5ns/7ns after first clock delay, after last WRITE executed. Precharge mode only. JEDEC PC100 specify three clocks. -75/-7E with load 4.6ns guaranteed design. Parameter guaranteed design. PC100 specifies maximum 4pF. PC100 specifies maximum 5pF. PC100 specifies maximum 6.5pF. -8E, 10ns; -75, 7.5ns; -7E, 7.5ns; 6ns. HIGH during refresh command period tRFC (MIN) else LOW. IDD6 limit actually nominal value does result fail value.
50pF
defines time which output achieves open circuit condition; reference VOL. last valid data element will meet before going High-Z. timing tests have with timing referenced 1.5V crossover point. input transition time longer than then timing referenced (MAX) (MIN) longer 1.5V crossover point. should always 1.5V referenced crossover. Refer Micron Technical Note TN-48-09 Other input signals allowed transition more than once every clocks otherwise valid levels.
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64Mb: SDRAM
INITIALIZE LOAD MODE REGISTER
tCKS
tCKH
tCMS tCMH
AUTO REFRESH
tCMS tCMH COMMAND
tCMS tCMH
PRECHARGE
AUTO REFRESH
LOAD MODE REGISTER
ACTIVE
DQML, DQMH
A0-A9,
CODE
BANKS SINGLE BANK
CODE
BA0,
BANKS
BANK
100µs Power-up: stable
High-Z
tRFC tRFC tMRD
Precharge banks
AUTO REFRESH
AUTO REFRESH
Program Mode Register DON'T CARE
TIMING PARAMETERS
UNITS UNITS
SYMBOL*
tCK(3) tCK(2) tCKH
SYMBOL*
tCKS tCMH tCMS tMRD3 tRFC
*CAS latency indicated parentheses. NOTE: HIGH clock HIGH time, commands applied NOP. mode register loaded prior AUTO REFRESH cycles desired. JEDEC PC100 specify three clocks. Outputs guaranteed High-Z after command issued.
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64Mb: SDRAM
POWER-DOWN MODE
tCKS tCKS tCKH
tCKS
tCMS tCMH COMMAND
PRECHARGE
ACTIVE
DQML, DQMH
A0-A9,
BANKS
SINGLE BANK
BA0,
BANK(S)
High-Z
BANK
clock cycles Precharge active banks banks idle, enter power-down mode
Input buffers gated while power-down mode banks idle Exit power-down mode DON'T CARE
TIMING PARAMETERS
UNITS UNITS
SYMBOL*
tCK(3)
SYMBOL*
tCK(2) tCKH tCKS tCMH tCMS
*CAS latency indicated parentheses. NOTE: Violating refresh requirements during power-down result loss data.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
CLOCK SUSPEND MODE
tCKS tCKH tCKS tCKH
tCMS tCMH COMMAND
READ WRITE
tCMS tCMH DQML, DQMH A0-A9,
COLUMN
COLUMN
BA0,
BANK BANK
DOUT
DOUT
DON'T CARE UNDEFINED
TIMING PARAMETERS
UNITS UNITS
SYMBOL* tAC(3) tAC(2)
tCK(3) tCK(2) tCKH
SYMBOL* tCKS tCMH tCMS
tHZ(3) tHZ(2)
*CAS latency indicated parentheses. NOTE: this example, burst length latency auto precharge disabled. x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
AUTO REFRESH MODE
COMMAND
AUTO REFRESH
PRECHARGE
AUTO REFRESH
ACTIVE
DQML, DQMH
A0-A9,
BANKS
SINGLE BANK BA0,
BANK(S)
RFC1 RFC1
BANK
High-Z
Precharge active banks
DON'T CARE
TIMING PARAMETERS
UNITS UNITS
SYMBOL*
tCK(3) tCK(2)
SYMBOL*
tCKH tCKS tCMH tCMS tRFC
*CAS latency indicated parentheses. NOTE: Each AUTO REFRESH command performs refresh cycle. Back-to-back commands required.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
SELF REFRESH MODE
tCKS
tRAS(MIN)1
tCKS tCMS COMMAND tCKH tCMH
AUTO REFRESH
PRECHARGE
COMMAND
INHIBIT
AUTO REFRESH
DQM/ DQML, DQMH
A0-A9,
BANKS
SINGLE BANK
BA0,
BANK(S)
High-Z Precharge active banks
tXSR2 Enter self refresh mode Exit self refresh mode (Restart refresh time base) DON'T CARE
stable prior exiting self refresh mode
TIMING PARAMETERS
SYMBOL*
tCK(3) tCK(2) tCKH
UNITS
SYMBOL*
tCKS tCMH tCMS tRAS tXSR
UNITS 120,000
120,000 120,000 120,000
*CAS latency indicated parentheses.
NOTES: maximum time limit Self Refresh mode. tRAS(MAX) applies non-Self Refresh mode. tXSR requires minimum clocks regardless frequency timing.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
READ WITHOUT AUTO PRECHARGE
tCKS tCMS tCMH COMMAND ACTIVE READ tCMS tCMH DQML, DQMH A0-A9, BA0, BANK DISABLE AUTO PRECHARGE BANK DOUT DOUT SINGLE BANKS BANK(S) DOUT DOUT BANK
COLUMN
tCKH
PRECHARGE
ACTIVE
BANKS
tRCD tRAS Latency
DON'T CARE UNDEFINED
TIMING PARAMETERS
SYMBOL*
tAC(3) tAC(2) tCK(3) tCK(2) tCKH tCKS
UNITS
SYMBOL* tCMH
tCMS tHZ(3) tHZ(2) tRAS tRCD
UNITS 120,000 120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length latency READ burst followed "manual" PRECHARGE. x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
READ WITH AUTO PRECHARGE
tCKS tCMS tCMH COMMAND
ACTIVE READ ACTIVE
tCKH
tCMS DQML, DQMH A0-A9,
tCMH
COLUMN
ENABLE AUTO PRECHARGE
BA0,
BANK BANK
BANK
tRCD tRAS Latency
DOUT
DOUT
DOUT
DOUT
DON'T CARE UNDEFINED
TIMING PARAMETERS
SYMBOL* tCMH tCMS
tHZ(3) tHZ(2) tRAS tRCD
SYMBOL* tAC(3) tAC(2)
tCK(3) tCK(2) tCKH tCKS
UNITS
UNITS 120,000
120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length latency x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
SINGLE READ WITHOUT AUTO PRECHARGE
tCKS tCMS tCMH COMMAND ACTIVE READ tCMS DQML, DQMH A0-A9, BA0, BANK DISABLE AUTO PRECHARGE BANK SINGLE BANKS BANK(S) BANK
COLUMN
tCKH
NOP3
PRECHARGE
ACTIVE
tCMH
BANKS
tRCD tRAS Latency
DOUT
DON'T CARE UNDEFINED
TIMING PARAMETERS
SYMBOL* tAC(3)
tAC(2) tCK(3) tCK(2) tCKH tCKS
UNITS
SYMBOL* tCMH
tCMS tHZ(3) tHZ(2) tRAS tRCD
UNITS 120,000
120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length latency READ burst followed "manual" PRECHARGE. x16: "Don't Care" "Don't Care" "Don't Care" PRECHARGE command allowed else tRAS would violated.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
SINGLE READ WITH AUTO PRECHARGE
tCKS tCMS tCMH COMMAND
ACTIVE
tCKH
NOP2
NOP2
READ
ACTIVE
tCMS DQML, DQMU A0-A9,
tCMH
COLUMN
ENABLE AUTO PRECHARGE
BA0,
BANK BANK
BANK
tRCD tRAS Latency
DOUT
DON'T CARE UNDEFINED
TIMING PARAMETERS
UNITS 120,000 120,000 120,000 UNITS
SYMBOL* tAC(3) tAC(2)
tCK(3) tCK(2) tCKH tCKS
SYMBOL* tCMH tCMS
tHZ(3) tHZ(2) tRAS tRCD
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length latency READ command allowed tRAS would violated. x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03 Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
ALTERNATING BANK READ ACCESSES
tCKS tCMS COMMAND tCMH
READ ACTIVE READ ACTIVE
tCKH
ACTIVE
tCMS DQML, DQMH A0-A9,
tCMH
COLUMN
COLUMN
ENABLE AUTO PRECHARGE
ENABLE AUTO PRECHARGE
BA0,
BANK BANK BANK BANK
BANK
tRCD BANK tRAS BANK BANK tRRD Latency BANK
DOUT
DOUT
DOUT
DOUT
DOUT
BANK
tRCD BANK
tRCD BANK
Latency BANK
DON'T CARE UNDEFINED
TIMING PARAMETERS
SYMBOL* tAC(3)
tAC(2) tCK(3) tCK(2) tCKH tCKS
UNITS
tCMH tCMS tRAS tRCD tRRD
UNITS 120,000
SYMBOL* 120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length latency x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
READ FULL-PAGE BURST
tCKS tCMS COMMAND tCMH
READ
tCKH
ACTIVE
BURST TERM
tCMS DQML, DQMH A0-A9,
tCMH
COLUMN
BA0,
BANK
BANK
tRCD Latency
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
(x16) locations within same (x8) locations within same 1,024 (x4) locations within same Full page completed Full-page burst does self-terminate. BURST TERMINATE command.
DON'T CARE UNDEFINED
TIMING PARAMETERS
SYMBOL*
tAC(3) tAC(2) tCK(3) tCK(2) tCKH
SYMBOL*
tCKS tCMH tCMS tHZ(3) tHZ(2) tRCD
UNITS
UNITS
*CAS latency indicated parentheses. NOTE: this example, latency x16: "Don't Care" "Don't Care" "Don't Care" Page left open; tRP.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
READ OPERATION
tCKS tCMS COMMAND tCMH
READ
tCKH
ACTIVE
tCMS DQML, DQMH A0-A9,
tCMH
COLUMN ENABLE AUTO PRECHARGE
BA0,
BANK
DISABLE AUTO PRECHARGE BANK
tRCD Latency
DOUT
DOUT
DOUT
DON'T CARE UNDEFINED
TIMING PARAMETERS
UNITS UNITS
SYMBOL* tAC(3) tAC(2)
tCK(3) tCK(2) tCKH
SYMBOL*
tCKS tCMH tCMS tHZ(3) tHZ(2) tRCD
*CAS latency indicated parentheses. NOTE: this example, burst length latency x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
WRITE WITHOUT AUTO PRECHARGE
tCKS tCMS COMMAND tCMH
WRITE PRECHARGE ACTIVE
tCKH
ACTIVE
tCMS tCMH DQML, DQMH A0-A9,
COLUMN BANKS DISABLE AUTO PRECHARGE BANK SINGLE BANK BANK BANK
BA0,
BANK
tRCD tRAS
DON'T CARE
TIMING PARAMETERS
SYMBOL*
tCK(3) tCK(2) tCKH tCKS tCMH
UNITS
SYMBOL* tCMS
tRAS tRCD
120,000
UNITS 120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length WRITE burst followed "manual" PRECHARGE. 15ns required between <DIN PRECHARGE command, regardless frequency. x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
WRITE WITH AUTO PRECHARGE
tCKS tCMS COMMAND tCMH
WRITE ACTIVE
tCKH
ACTIVE
tCMS tCMH DQML, DQMH A0-A9,
COLUMN ENABLE AUTO PRECHARGE
BA0,
BANK BANK
BANK
tRCD tRAS
DON'T CARE
TIMING PARAMETERS
SYMBOL* UNITS
tCK(3) tCK(2) tCKH tCKS tCMH
SYMBOL*
tCMS tRAS tRCD
7.5ns 120,000
UNITS 120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
SINGLE WRITE WITHOUT AUTO PRECHARGE
tCKS tCMS COMMAND tCMH
WRITE NOP4 NOP4 PRECHARGE ACTIVE
tCKH
ACTIVE
tCMS tCMH DQML, DQMH A0-A9,
COLUMN BANKS DISABLE AUTO PRECHARGE BANK SINGLE BANK BANK BANK
BA0,
BANK
tRCD tRAS
DON'T CARE
TIMING PARAMETERS
SYMBOL*
tCK(3) tCK(2) tCKH tCKS tCMH
UNITS
SYMBOL*
tCMS tRAS tRCD
120,000
UNITS 120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length WRITE burst followed "manual" PRECHARGE. 15ns required between <DIN PRECHARGE command, regardless frequency. x16: "Don't Care" "Don't Care" "Don't Care" PRECHARGE command allowed else tRAS would violated.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
SINGLE WRITE WITH AUTO PRECHARGE
tCKS tCMS COMMAND tCMH
NOP3 NOP3 NOP3 WRITE ACTIVE
tCKH
ACTIVE
tCMS DQML, DQMH A0-A9,
tCMH
COLUMN ENABLE AUTO PRECHARGE
BA0,
BANK BANK
BANK
tRCD tRAS
DON'T CARE
TIMING PARAMETERS
SYMBOL* UNITS
tCK(3) tCK(2) tCKH tCKS tCMH
SYMBOL*
tCMS tRAS tRCD
120,000 7.5ns
UNITS 120,000
120,000
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length x16: "Don't Care" "Don't Care" "Don't Care" WRITE command allowed else tRAS would violated.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
ALTERNATING BANK WRITE ACCESSES
tCKS tCMS COMMAND tCMH
WRITE ACTIVE WRITE ACTIVE
tCKH
ACTIVE
tCMS DQML, DQMH A0-A9,
tCMH
COLUMN
COLUMN
ENABLE AUTO PRECHARGE
ENABLE AUTO PRECHARGE
BA0,
BANK BANK BANK BANK
BANK
tRCD BANK tRAS BANK BANK tRRD
BANK
tRCD BANK
BANK
tRCD BANK
BANK
DON'T CARE
TIMING PARAMETERS
SYMBOL*
tCK(3) tCK(2) tCKH tCKS tCMH tCMS
UNITS
SYMBOL*
tRAS tRCD tRRD
UNITS 120,000
120,000
120,000
7.5ns
120,000
*CAS latency indicated parentheses. NOTE: this example, burst length x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
WRITE FULL-PAGE BURST
tCKS tCMS COMMAND tCMH
WRITE
tCKH
ACTIVE
BURST TERM
tCMS tCMH DQML, DQMH A0-A9,
COLUMN
BA0,
BANK
BANK
tRCD
Full-page burst does self-terminate. BURST TERMINATE command stop.2,
(x16) locations within same (x8) locations within same 1,024 (x4) locations within same
Full page completed
DON'T CARE
TIMING PARAMETERS
UNITS SYMBOL* tCKS tCMH
tCMS tRCD
SYMBOL*
tCK(3) tCK(2) tCKH
UNITS
*CAS latency indicated parentheses. NOTE: x16: "Don't Care" "Don't Care" "Don't Care" must satisfied prior PRECHARGE command. Page left open; tRP.
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
WRITE OPERATION
tCKS tCMS COMMAND tCMH
WRITE
tCKH
ACTIVE
tCMS tCMH DQML, DQMH A0-A9,
COLUMN ENABLE AUTO PRECHARGE
BA0,
DISABLE AUTO PRECHARGE BANK
BANK
tRCD
DON'T CARE
TIMING PARAMETERS
UNITS UNITS
SYMBOL*
tCK(3) tCK(2) tCKH
SYMBOL*
tCKS tCMH tCMS tRCD
*CAS latency indicated parentheses. NOTE: this example, burst length x16: "Don't Care" "Don't Care" "Don't Care"
64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.
64Mb: SDRAM
54-PIN PLASTIC TSOP (400 mil)
22.22 ±.08 .375 ±.075 (2X) DETAIL
2.80 11.76 ±.20
10.16 ±.08
(2X) 1.00 (2X)
+.03 -.02
+.10 -.05 ±.10 DETAIL
NOTE: dimensions millimeters. Package width length include mold protrusion; allowable mold protrusion 0.25mm side.
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64Mb: SDRAM 64MSDRAM_F.p65 Rev. Pub. 1/03
Micron Technology, Inc., reserves right change products specifications without notice. ©2003, Micron Technology, Inc.

SYNCHRONOUS DRAM PC66-, PC100-, PC133-compliant Fully synchronous

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