omponents 21201 Itasca Street Chatsworth MPSA55 MPSA56 Capab

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omponents 21201 Itasca Street Chatsworth MPSA55 MPSA56 Capab

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omponents 21201 Itasca Street Chatsworth
MPSA55 MPSA56
Capable 1.5Watts Power Dissipation. Collector-current 500mA Collector-base Voltage Operating storage junction temperature range: -55OC +150
Configuration Bottom View
Silicon Amplifier Transistor
TO-92
Maximum Ratings
Symbol TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation =25OC Derate above 25OC Total Device Dissipation =25OC Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage(1) (IC=1.0mAdc, MPSA55 MPSA56 Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCE=60Vdc, Collector Cutoff Current (VCB=60Vdc, MPSA55 (VCB=80Vdc, MPSA56 Current Gain (IC=10mAdc, CE=1.0Vdc) Current Gain (IC=100mAdc, CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, CE=1.0Vdc) Rating +150 +150 Unit Units
Electrical Characteristics 25OC Unless Otherwise Specified
CHARACTERISTICS
V(BR)CEO uAdc
V(BR)EBO ICES ICBO
uAdc
CHARACTERISTICS
hFE(1) hFE(2) VCE(sat) VBE(on) 0.25
DIMENSIONS INCHES .175 .175 .500 .016 .135 .095 4.45 4.46 12.7 0.41 3.43 2.42
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product (IC=100mAdc, CE=1.0Vdc, f=100MHz) MPSA55 MPSA56 Pulse Test: Pulse Width<300us, Duty Cycle<2.0% defined frequency which extrapolates unity.
.185 .185 -.020 .145 .105
4.70 4.70 -0.63 3.68 2.67
NOTE
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omponents 21201 Itasca Street Chatsworth MPSA55 MPSA56 Capab

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