MMBT2907AWT1 These transistors designed general purpose mplifier
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Preliminary Information General Purpose Transistor
MMBT2907AWT1
These transistors designed general purpose mplifier applications. They housed SOT-323/ SC-70 package which designed power surface mount applications.
COLLECTOR BASE
EMITTER
CASE 419-02 STYLE SOT-323
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol Value Unit mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Board, 25°C Thermal Resistance, Junction Ambient Junction Storage Temperature Symbol Tstg +150 Unit °C/W
DEVICE MARKING
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted.)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) mAdc, Collector-Emitter Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage -10µAdc, Base Cutoff Current -30Vdc, EB(OFF) -0.5Vdc Collector Cutoff Current -30Vdc, EB(OFF) -0.5Vdc FR-5 0.75 0.062 Pulse Test: Pulse Width Duty Cycle 2.0%.
(BR)CBO
(BR)CEO
-5.0
nAdc nAdc
(BR)EBO
K2-1/2
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol VCE(sat)
BE(sat)
Unit
CHARACTERISTICS
Current Gain(1) =-0.1 mAdc, =-10 Vdc) -1.0 mAdc, Vdc) mAdc, Vdc) -150mAdc, -10Vdc) -500mAdc, =-10 Vdc) Collector-Emitter Saturation Voltage(1) -150 mAdc, mAdc) -500 mAdc, mAdc) Base-Emitter Saturation Voltage(1) -150 mAdc, -15mAdc) -500mAdc, -50mAdc -0.4 -1.6 -1.3 -2.6
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(4) -50mAdc, 20Vdc, 100MHz) Output Capacitance Vdc, MHz) Input Capacitance -2.0Vdc, MHz)
SWITCHING CHARACTERISTICS
Turn-On Time Vdc, Delay Time -150 mAdc, mAdc) Rise Time Storage Time -6.0 Vdc, Fall Time -150 mAdc,I mAdc) Turn-Off Time Pulse Test: Pulse Width <300 Duty Cycle <2.0%.
K2-2/2
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