Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data

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Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data

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Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices Motorola recommended choices future best overall value.
POWER DISSIPATION (WATTS)
Darlington Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction Case
Operating Storage Junction Temperature Range
Total Device Dissipation 25_C Derate above 25_C
Base Current
Collector Current Continuous Peak
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Rating
Characteristic
Symbol
Tstg
VCEO
MJH6282 MJH6285
Symbol
CASE TEMPERATURE (°C)
Figure Power Derating
MJH6283 MJH6286
1.28
0.78
MJH6284 MJH6287
_C/W
Watts
W/_C
Unit
Unit
DARLINGTON AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS WATTS
MJH6282 MJH6283* MJH6284* MJH6285 MJH6286* MJH6287
*Motorola Preferred Device
CASE 340D-01
Order this document MJH6282/D
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
Pulse test: Pulse Width Duty Cycle 2.0%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
APPROX
APPROX
VARIED OBTAIN DESIRED CURRENT LEVELS MUST FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE MSD6100 USED BELOW
Collector-Emitter Saturation Voltage Adc, mAdc) Collector-Emitter Saturation Voltage Adc, mAdc)
Fall Time
Storage Time
Rise Time
Delay Time
Small-Signal Current Gain Adc, Vdc, kHz)
Output Capacitance (VCB Vdc, MHz)
Current-Gain Bandwidth Product Adc, Vdc, MHz)
Base-Emitter Saturation Voltage Adc, mAdc)
Base-Emitter Voltage Adc, Vdc)
Current Gain Adc, Vdc) Current Gain Adc, Vdc)
Emitter Cutoff Current (VBE Vdc,
Collector Cutoff Current (VCE Rated VCB, VBE(off) Vdc) (VCE Rated VCB, VBE(off) Vdc, 150_C)
Collector Cutoff Current (VCE Vdc, (VCE Vdc, (VCE Vdc,
Collector-Emitter Sustaining Voltage Adc,
DUTY CYCLE 1.0% test circuit reverse diode voltage polarities.
Figure Switching Times Test Circuit
Vdc, Duty Cycle 1.0%
Resistive Load
Characteristic
disconnected
SCOPE
MJH6282, MJH6285 MJH6283, MJH6286 MJH6284, MJH6287
MJH6282, MJH6285 MJH6283, MJH6286 MJH6284, MJH6287
MJH6282, MJH6285,
BASE
MJH6282 MJH6283 MJH6284
Motorola Bipolar Power Transistor Device Data Figure Darlington Schematic
COLLECTOR VCEO(sus) EMITTER VCE(sat) VBE(sat) VBE(on) Symbol Symbol ICEO IEBO ICEX BASE Typical MJH6285 MJH6286 MJH6287 18,000 COLLECTOR EMITTER mAdc mAdc mAdc Unit Unit
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RJC(t) r(t) 0.78°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t) TIME (ms) P(pk)
DUTY CYCLE, t1/t2 1000
0.02 0.03
0.05
Figure Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 0.05 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 150°C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE
0.05 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR CURRENT (AMPS) 150°C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE
0.05 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 150°C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE
Figure MJH6282, MJH6285
Figure MJH6283, MJH6286
Figure MJH6284, MJH6287
COLLECTOR CURRENT (AMPS)
IC/IB 25°C VBE(off) DUTY CYCLE
FORWARD BIAS There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based J(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided J(pk) J(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
MJH6282, 6285 MJH6283, 6286 MJH6284, 6287
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Maximum RBSOA, Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
3000 2000 hFE, CURRENT GAIN hFE, CURRENT GAIN 150°C 1000 25°C 55°C 3000 2000 5000 150°C 25°C
1000 55°C
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000 25°C
1000
BASE CURRENT (mA)
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS)
25°C
VOLTAGE (VOLTS)
VBE(sat) IC/IB VCE(sat) IC/IB
VBE(sat) IC/IB VBE(on)
VCE(sat) IC/IB
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure "On" Voltages
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
STYLE
CASE 340D-01 ISSUE
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
reach EUROPE: Motorola Literature Distribution; P.O. 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data
*MJH6282/D*
MJH6282/D

Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data

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