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Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Designer's Data "Worst Case" Conditions Designer's Data Sheet permits design most circuits entirely from information presented. Limit curves representing boundaries device characteristics given facilitate "worst case" design.
Switchmode Series
Silicon Power Transistor
Designer's
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
SWITCHMODE trademark Motorola, Inc.
Features: High VCEV Capability (1800 Volts) Saturation Voltage 100_C Performance Specified for: Reverse-Biased with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents
This transistor designed high-voltage, power switching inductive circuits where RBSOA breakdown voltage critical. They particularly suited line-operated switchmode applications.
Typical Applications: Fluorescent Lamp Ballasts Inverters Solenoid Relay Drivers Motor Controls Deflection Circuits
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature Soldering Purposes: from Case Seconds
Thermal Resistance, Junction Case
Operating Storage Junction Temperature Range
Total Power Dissipation 25_C 100_C Derate above 25_C
Base Current Continuous Peak(1)
Collector Current Continuous Peak(1)
Emitter Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Data Sheet
Characteristic
Rating
10%.
VCEO(sus)
Symbol
Symbol
Tstg
VCEV
Value
1800
1.56
0.64
POWER TRANSISTOR AMPERES VOLTS WATTS
MJE1320
CASE 221A-06 TO-220AB
Order this document MJE1320/D
Watts
W/_C
_C/W
Unit
Unit
MJE1320
Pulse Test: Pulse Width Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS(1) SECOND BREAKDOWN CHARACTERISTICS
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Fall Time
Crossover Time
Storage Time
Crossover Time
Storage Time
Inductive Load, Clamped (Table
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table
Output Capacitance (VCB Vdc, ftest MHz)
Base-Emitter Saturation Voltage Adc, Adc) Adc, Adc) Adc, Adc, 100_C)
Collector-Emitter Saturation Voltage Adc, Adc) Adc, Adc) Adc, Adc, 100_C)
Current Gain (VCE Vdc)
Clamped Inductive with Base Reverse Biased
Second Breakdown Collector Current with base forward biased
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (VCEV Rated Value, VBE(off) Vdc) (VCEV Rated Value, VBE(off) Vdc, 100_C)
Collector-Emitter Sustaining Voltage
Vclamp Vdc, VBE(off) Vdc, Vdc, Duty Cycle Characteristic
100_C
25_C
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICEV IS/b 0.15 0.18 Figure Figure 10.5 0.25 0.25 mAdc mAdc Unit
MJE1320
TYPICAL STATIC CHARACTERISTICS
COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, CURRENT GAIN 0.05 0.07 100°C 25°C BASE CURRENT (AMP) 25°C
COLLECTOR CURRENT (AMPS)
Figure Current Gain
Figure Collector Saturation Region
COLLECTOR-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
IC/IB 25°C
IC/IB
100°C
100°C
25°C 0.25
0.25
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure Collector-Emitter Saturation Voltage
Figure Base-Emitter Saturation Voltage
COLLECTOR CURRENT CAPACITANCE (pF) 150°C 125°C 100°C 75°C 25°C REVERSE FORWARD
25°C
VBE, BASE-EMITTER VOLTAGE (VOLTS)
REVERSE VOLTAGE (VOLTS)
Figure Collector Cutoff Region
Figure Capacitance Variation
Motorola Bipolar Power Transistor Device Data
MJE1320
TYPICAL DYNAMIC CHARACTERISTICS
VCE(pk) VCE(pk) STORAGE TIME (µs) IC(pk) 100°C IC/IB1 TIME COLLECTOR CURRENT (AMPS) VBE(off)
VCE(pk)
Figure Inductive Switching Measurements
CROSSOVER TIME VBE(off) FALL TIME
Figure Inductive Storage Time
VBE(off)
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure Inductive Crossover Time Table Resistive Load Switching
Figure Inductive Fall Time
2N6191 H.P. EQUIV. P.G. T.U.T. 0.02 0.02 2N5337
H.P. EQUIV. P.G. T.U.T.
*Tektronix AM503 *P6302 Equivalent
VBE(off) Note: Adjust obtain desired VBE(off) Point
Motorola Bipolar Power Transistor Device Data
MJE1320
Table Inductive Load Switching
0.02 H.P. EQUIV. P.G. 0.02 T.U.T. MR856 Lcoil (ICpk) Vclamp RBSOA Volts selected desired VCE(pk) IC(pk) 2N5337
2N6191
adjusted obtain IC(pk) V(BR)CEO Volts Inductive Switching Volts selected desired Scope Tektronix 7403 Equivalent
*Tektronix *P-6042 *Equivalent
Note: Adjust obtain desired VBE(off) Point
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C; J(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Second breakdown limitations derate same thermal limitations. Allowable current voltages shown Figure found case temperature using appropriate curve Figure J(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown. REVERSE BIAS inductive loads, high voltage high current must sustained simultaneously during turn-off, most cases, with base-to-emitter junction reverse biased. Under these conditions collector voltage must held safe level below specific value collector current. This accomplished several means such active clamping, snubbing, load line shaping, etc. safe level these devices specified Reverse Bias Safe Operating Area represents voltage-current condition allowable during reverse biased turnoff. This rating verified under clamped conditions that device never subjected avalanche mode. Figure gives RBSOA characteristics.
Motorola Bipolar Power Transistor Device Data
MJE1320
GUARANTEED SAFE OPERATING AREA
SECOND BREAKDOWN DERATING COLLECTOR CURRENT (AMPS) 0.05 0.02 0.01 CASE TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 25°C
POWER DERATING FACTOR
THERMAL DERATING
Figure Power Derating
Figure Maximum Rated Forward Bias Safe Operating Area
COLLECTOR CURRENT (AMPS)
IC/IB
100°C VBE(off)
IC/IB
1200 1500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1800
Figure Maximum Rated Reverse Bias Safe Operating Area
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.05 0.02 ZJC(t) r(t) 1.56°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) TIME (ms) P(pk)
0.01 0.01 0.01 SINGLE PULSE
DUTY CYCLE, t1/t2
Figure Thermal Response
Motorola Bipolar Power Transistor Device Data
MJE1320
PACKAGE DIMENSIONS
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION DEFINES ZONE WHERE BODY LEAD IRREGULARITIES ALLOWED. INCHES 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 MILLIMETERS 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04
STYLE
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE
Motorola Bipolar Power Transistor Device Data
MJE1320
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
reach EUROPE: Motorola Literature Distribution; P.O. 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data
*MJE1320/D*
MJE1320/D
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