49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Cha
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HUF75329G3, HUF75329P3, HUF75329S3S
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs manufactured using innovative UltraFET® process. This advanced process technology achieves lowest possible on-resistance silicon area, resulting outstanding performance. This device capable withstanding high energy avalanche mode diode exhibits very reverse recovery time stored charge. designed applications where power efficiency important, such switching regulators, switching converters, motor drivers, relay drivers, lowvoltage switches, power management portable battery-operated products. Formerly developmental type TA75329.
Features
49A, Ultra On-Resistance, rDS(ON) 0.024 Temperature Compensating PSPICE® SABERModels Available www.Intersil.com Thermal Impedance PSPICE SABER Models Peak Current Pulse Width Curve Rating Curve Related Literature TB334, "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER HUF75329G3 HUF75329P3 HUF75329S3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75329G 75329P 75329S
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, e.g., HUF75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
DRAIN (TAB)
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
Product reliability information found severe environments, Automotive HUFA series. Intersil semiconductor products manufactured, assembled tested under ISO9000 QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3SOGM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified Figure Figures 0.86 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous (Figure Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation Derate Above 25oC Operating Storage Temperature .TJ, TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER STATE SPECIFICATIONS
25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
Drain Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
250µA, (Figure 50V, 45V, 150oC ±20V VDS, 250µA (Figure 49A, (Figure
±100
Gate Source Leakage Current STATE SPECIFICATIONS Gate Source Threshold Voltage Drain Source Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS
VGS(TH) rDS(ON)
0.020
0.024
oC/W oC/W oC/W
(Figure TO-247 TO-220, TO-263
1.17
SWITCHING SPECIFICATIONS (VGS 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge Threshold Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge Qg(TOT) Qg(10) Qg(TH) 30V, 49A, 0.61 Ig(REF) 1.0mA (Figure td(ON) td(OFF) tOFF 30V, 49A, 0.61, 10V,
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3S
Electrical Specifications
PARAMETER CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS 25V, 1MHz (Figure 1060 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL 49A, dISD/dt 100A/µs 49A, dISD/dt 100A/µs TEST CONDITIONS 1.25 UNITS
Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 10-1
SINGLE PULSE 0.01 10-4
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
DRAIN CURRENT
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3S Typical Performance Curves
1000
(Continued)
25oC
IDM, PEAK CURRENT
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5 10-4 10-3 10-2 PULSE WIDTH 10-1
FIGURE PEAK CURRENT CAPABILITY
100µs
IAS, AVALANCHE CURRENT
RATED 25oC
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
DRAIN CURRENT
STARTING 25oC
OPERATION THIS AREA LIMITED rDS(ON)
VDSS(MAX)
10ms
STARTING 150oC
VDS, DRAIN SOURCE VOLTAGE
0.001
0.01 tAV, TIME AVALANCHE (ms)
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE FORWARD BIAS SAFE OPERATING AREA FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
DRAIN CURRENT
DRAIN CURRENT
PULSE TEST PULSE DURATION 80µs DUTY CYCLE 0.5%
-55oC
175oC
PULSE DURATION 80µs 25oC
25oC
VDS, DRAIN SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3S Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE 80µs PULSE TEST 10V, NORMALIZED GATE THRESHOLD VOLTAGE
(Continued)
VDS, 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
1800 1500
CAPACITANCE (pF)
1MHz CISS CRSS COSS CISS
1200
COSS CRSS
DRAIN SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
GATE SOURCE VOLTAGE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
WAVEFORMS DESCENDING ORDER: 36.75A 24.5A 12.25A
GATE CHARGE (nC)
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3S Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3S PSPICE Electrical Model
.SUBCKT HUF75329P
1.72e-9 1.52e-9 9.61e-10
LDRAIN
6/19/97
DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD EBREAK 58.13 EVTHRES EVTEMP LDRAIN 1e-9 LGATE 2.86e-9 LSOURCE 2.69e-9 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD RBREAK RBREAKMOD RDRAIN RDRAINMOD 1e-3 RGATE 1.52 RLDRAIN RLGATE 26.9 RLSOURCE 28.6 RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 13.85e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
GATE RLGATE
DPLCAP
RLDRAIN DBREAK EBREAK
DRAIN RSLC1 ESLC
RSLC2
LGATE EVTEMP RGATE EVTHRES
MSTRO LSOURCE RSOURCE RLSOURCE RBREAK RVTEMP SOURCE
VBAT ESLC .MODEL DBODYMOD 7.50e-13 5.05e-3 TRS1 2.21e-3 TRS2 1.02e-6 1.51e-9 4.05e-8 0.5) .MODEL DBREAKMOD 2.14e-1 TRS1 9.62e-4 TRS2 1.23e-6) .MODEL DPLCAPMOD (CJO 13.5e-10 1e-30 0.85) .MODEL MMEDMOD NMOS (VTO 3.25 2.50 1e-30 1.52) .MODEL MSTROMOD NMOS (VTO 3.80 70.0 1e-30 .MODEL MWEAKMOD NMOS (VTO 2.91 0.06 1e-30 15.2 0.1) .MODEL RBREAKMOD (TC1 1.05e-3 1.94e-7) .MODEL RDRAINMOD (TC1 8.04e-2 1.37e-4) .MODEL RSLCMOD (TC1 4.83e-3 1.16e-6) .MODEL RSOURCEMOD (TC1 .MODEL RVTHRESMOD -3.43e-3 -1.63e-5) .MODEL RVTEMPMOD (TC1 -1.35e-3 1.16e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2BMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -7.90 VOFF= -4.90) -4.90 VOFF= -7.90) -0.50 VOFF= 2.50) 2.50 VOFF= -0.50)
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
RDRAIN
DBODY
MWEAK MMED
VBAT
RVTHRES
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3S SABER Electrical Model
June 1997 template huf75329p electrical iscl d.model dbodymod 7.50e-13, 1.51e-9, 4.05e-8, 0.5) d.model dbreakmod d.model dplcapmod (cjo 13.5e-10, 1e-30, 0.85) m.model mmedmod (type=_n, 3.25, 2.50, 1e-30, m.model mstrongmod (type=_n, 3.80, 1e-30, m.model mweakmod (type=_n, 2.91, 0.06, 1e-30, sw_vcsp.model s1amod (ron 1e-5, roff 0.1, -7.90, voff -4.90) sw_vcsp.model s1bmod (ron 1e-5, roff 0.1, -4.90, voff -7.90) sw_vcsp.model s2amod (ron 1e-5, roff 0.1, -0.50, voff 2.50) sw_vcsp.model s2bmod (ron 1e-5, roff 0.1, 2.50, voff -0.50) c.ca 1.72e-9 c.cb 1.52e-9 c.cin 9.61e-10
LDRAIN DPLCAP RSLC1 RSLC2 ISCL RLDRAIN RDBREAK DBREAK MWEAK MMED MSTRO EBREAK RDBODY DRAIN
LGATE GATE RLGATE EVTEMP RGATE EVTHRES
RDRAIN
d.dbody model=dbodymod d.dbreak model=dbreakmod d.dplcap model=dplcapmod i.it
DBODY
l.ldrain 1e-9 l.lgate 2.86e-9 l.lsource 2.69e-9 k.k1 i(l.lgate) i(l.lsource) l(l.lgate), l(l.lsource), 0.0085
LSOURCE RLSOURCE
SOURCE
RSOURCE RBREAK RVTEMP
m.mmed model=mmedmod, m.mstrong model=mstrongmod, m.mweak model=mweakmod, res.rbreak 1.05e-3, 1.94e-7 res.rdbody 5.05e-3, 2.21e-3, 1.02e-6 res.rdbreak 2.14e-1, 9.62e-4, 1.23e-6 res.rdrain 1e-3, 8.04e-2, 1.37e-4 res.rgate 1.52 res.rldrain res.rlgate 26.9 res.rlsource 28.6 res.rslc1 1e-6, 4.83e-3, 1.16e-6 res.rslc2 res.rsource 13.85e-3, res.rvtemp -1.35e-3, 1.16e-6 res.rvthres -3.43e-3, -1.63e-5 spe.ebreak 58.13 spe.eds spe.egs spe.esg spe.evtemp spe.evthres sw_vcsp.s1a model=s1amod sw_vcsp.s1b model=s1bmod sw_vcsp.s2a model=s2amod sw_vcsp.s2b model=s2bmod v.vbat
VBAT
RVTHRES
equations (n51->n50) iscl iscl: v(n51,n50) 3.5))
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
HUF75329G3, HUF75329P3, HUF75329S3S SPICE Thermal Model
February 1999 HUF75329P CTHERM1 2.80e-3 CTHERM2 1.00e-2 CTHERM3 6.80e-3 CTHERM4 7.00e-3 CTHERM5 2.2e-2 CTHERM6 5.1e-2 RTHERM1 7.94e-3 RTHERM2 1.98e-2 RTHERM3 5.57e-2 RTHERM4 3.13e-1 RTHERM5 4.61e-1 RTHERM6 7.26e-2
RTHERM1 CTHERM1 JUNCTION
RTHERM2
CTHERM2
RTHERM3
CTHERM3
SABER Thermal Model
SABER thermal model HUF75329P template thermal_model thermal_c ctherm.ctherm1 2.80e-3 ctherm.ctherm2 1.00e-2 ctherm.ctherm3 6.80e-3 ctherm.ctherm4 7.00e-3 ctherm.ctherm5 2.2e-2 ctherm.ctherm6 5.1e-2 rtherm.rtherm1 7.94e-3 rtherm.rtherm2 1.98e-2 rtherm.rtherm3 5.57e-2 rtherm.rtherm4 3.13e-1 rtherm.rtherm5 4.61e-1 rtherm.rtherm6 7.26e-2
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
CASE
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev.
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First Production
Identification Needed
Full Production
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Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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