CHANNEL 800V 5.4A TO-247/ISOWATT218 FAST POWER TRANSISTOR TYPE 6N

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CHANNEL 800V 5.4A TO-247/ISOWATT218 FAST POWER TRANSISTOR TYPE 6N

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STW6NA80 STH6NA80FI
CHANNEL 800V 5.4A TO-247/ISOWATT218 FAST POWER TRANSISTOR
TYPE 6NA80 STH6NA80FI
DS(on)
TYPICAL RDS(on) AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION
TO-247
ISOWATT218
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS REGULATORS DC-DC DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value W6NA80 Drain-source Voltage Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Insulation ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
STH6NA80F 0.48 4000
Pulse width limited safe operating area
October 1998
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STW6NA80-STH6NA80FI
THERMAL DATA
TO-247 -case -amb thc-sink Thermal Resistance Junction-case 0.83 ISOW T218 2.08
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Repetitive Avalanche Energy (pulse width limited max, Avalanche Current, Repetitive Not-Repetitive pulse width limited max, Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Max. Unit
Rating Zero Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Test ditions Min. 2.25
Max. 3.75
Unit
Static Drain-source Resistance
State Drain Current ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test ditions ID(o DS(on Min. 1250 1700 Max. Unit
2/10
STW6NA80-STH6NA80FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) (di/dt) Parameter Turn-on Time Rise Time Turn-on Current Slope Test ditions (see test circuit, figure (see test circuit, figure Min. Max. Unit A/µs
Total Gate Charge Gate-Source Charge Gate-Drain Charge
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test ditions (see test circuit, figure Min. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 15.2 di/dt A/µs (see test circuit, figure Test ditions Min. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area TO-247
Safe Operating Area ISOWATT218
3/10
STW6NA80-STH6NA80FI
Thermal Impedance TO-247 Thermal Impedance ISOWATT218
Derating Curve TO-247
Derating Curve ISOWATT218
Output Characteristics
Transfer Characteristics
4/10
STW6NA80-STH6NA80FI
Transconductance Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
5/10
STW6NA80-STH6NA80FI
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
STW6NA80-STH6NA80FI
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
7/10
STW6NA80-STH6NA80FI
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
8/10
STW6NA80-STH6NA80FI
ISOWATT218 MECHANICAL DATA
DIM. MIN. 5.35 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 TYP. MAX. 5.65 2.08 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
P025C
9/10
STW6NA80-STH6NA80FI
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com
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CHANNEL 800V 5.4A TO-247/ISOWATT218 FAST POWER TRANSISTOR TYPE 6N

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