Infineon Technologies Villach Vertrieb Operngasse A-1040 Wien (+43) 87

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Published Infineon Technologies
Ordering B173-H7467-G2-x-7600 Printed Germany 09002.5
Never stop thinking.
GaAs PRODUCTS
producers wireless (WS) components, Infineon Technologies (IFX, formerly Siemens Semiconductor Group) Product Division stands continuous commitment innovative technologies products combined with volume strategy, permanent effort attain cost leadership, flexible service privileged supply conditions customers partners. objective IFX's technology product roadmap offer complete system solutions chip sets well standard customized components enhanced GaAs hetero materials (SiGe HBT, GaAs HEMT, GaAs HBT). core competence production components surface-mounted technology (SMT). been active produce high-volume GaAs-based discrete components MMICs (Monolithic Microwave ICs), modules, well high-speed logic circuits enhanced technologies. This brochure focuses GaAs technology products, presenting roadmaps, resources, product portfolios, quality general business philosophy. production GaAs semiconductor components since 1978. These include low-noise (LN) power field effect transistors, Hall sensors transceiver MMICs frequency range GHz. world's first commercial GaAs MMIC, broadband amplifier produced Infineon 1981, underlines long-term commitment success. indispensable part major applications wireless communications. They intended substitute devices, instead represent valuable supplement covering about 15-20% applications. From this perspective GaAs technology, because contributes major system innovations mobile telephones, satellite communication, short-haul communications (WLAN, WLL, PT(M)P, LMDS) well traffic security. follow vision providing market-leading system solutions universal wireless personal communication system (e.g. UMTS/W-CDMA), combining telephone, fax, e-mail, also with Bluetooth technology. such applications require high-grade components GaAs materials. GaAs will dominate applications which require very noise figure (NF), high linearity, most importantly, very good (Power Added Efficiency) supply voltages below). This GaAs components contribute optimizing sensitivity, efficiency, power consumption finally size economy communication equipment.
Technology Generation
GaAs Player Power Amplifiers
30-3 30GHz 20W/10GHz
(hetero bipolar transistor, Fig. process based AlGaAs/InGaP hetero layers deposited with (molecular beam epitaxy) MOCVD (metalorganic chemical vapor deposition) GaAs substrates combines III/V material advantages with benefits bipolar transistor: high gain stage, good phase noise especially unipolar supply voltage. optimized large volume
HEMT 0.18µm 60GHz 1W/40GHz
30GHz 2W/2GHz
30-2 30GHz 5W/6GHz
applications with special emphasis thermal heat dissipation. Production start CDMA applications scheduled 2000.
HEMT LN60 0.18µm 60GHz NF0, 4dB/12GHz
HEMT 0.5µm 30GHz Power
HEMT 0.13µm 110GHz mmWave
HEMT M30E Enhancement 0.5µm 30GHz
DIOM 1.0µm 15GHz Power
DIOM 18LVM 0.8µm 18GHz Power
DIOM Power 0.5µm 20GHz 10W/10GHz
DIOM LVM-3 Enhancement 0.4µm 25GHz
DIOM LVM-2 0.6µm 20GHz Power
Gate
Source
GaAs HEMT
Fig. GaAs technology cross-section
Drain
1997
1998
1999
2000
2001
2002
Figure shows GaAs technology roadmap including MESFET (DIOM), different versions upgrades.
Fig. GaAs Technology roadmap
GaAs DIOM MESFET: Unique Process
MESFET process (Fig. 2a). Infineon's MESFET process DIOM 15/18/20 with gate lengths between optimized applications microwave frequency range GHz. DIOM process (Double Ge/Si Contact Implantation, Ohmic/Gate Metal) exceptional, self-aligned (patent-protected), cost-effective process. Application benefits compared with conventional recessed chips excellent power amplifier linear circuit capabilities comparable high breakdown voltage good performance near pinch-off combined with high uniformity. DIOM 15/20 process normally used base-station, Cable phased array radar components. DIOM-LVM (Low Voltage Mobile) variants optimized low-voltage mobile phone equipment, i.e. MMICs cellular cordless telephones WLAN/W-CDMA supply voltages down
(high electron mobility transistor, Fig. process uses pseudomorphic AlGaAs/InGaAs (molecular beam epitaxy) layers with gate lengths down 0.13 comparison with competition, Infineon HEMT process based exclusively standard production technologies. sub-0.5 gates realized i-line stepper lithography combination with phase shift masks self-aligned spacer processes. This, together with special refractory gate metal passivation layers, results superior performance quality, which eventually development world's first space-qualified HEMT component 1994. different process variants optimized specific frequency ranges applications: HEMT (mobile communication), HEMT (mm-wave, GHz) finally HEMT (automotive radar GHz). addition, program been launched develop enhancement mode HEMT M30E process mobile communication circuits.
Source
Gate
Drain
n-GaAs n+-GaAs
Passivation
Airbridge
Interconnect
s.i. GaAs
GaAs MESFET
Fig. GaAs technology cross-section
GaAs
Fig. GaAs technology cross-section
APPLICATION FIELDS PRODUCT OVERVIEW
GaAs application fields GaAs compo-
Multichip Modules TSSOP-10
HF/PA MMIC's
nents mobile telephone systems such cordless cellular, PT(M)P radio links, satellite tuners, WLAN&WLL systems, Mil/HiRel such phased array radar systems distance radars (Fig. concentrating resources mainly cellular mobile phones 2500 MHz, tuner GHz, point-to-multipoint (LMDS) automotive cruise control systems GHz. Below short summary available products each individual system.
Discrete
Sot-89
SOT-223 SOT-143
C-LCC-8 SCT-598 SCT-595
SOT-363/ SC88
VQFN-20/ 24/32
Bare Die/ FlipChip Bare Die/ FlipChip TSFP4 TSLP TSFP3
HF/PA MMIC's Multichip
Fig. Application fields
GaAs Technology
SOT-343/ SC82A
MESFET HEMT 6-inch wafer production
GaAs Tuners Cable Mobile Telephone Cell. Mobile Telephone Cordl. WLAN, WLL, Bluetooth PTMP Radio SATCOM Distance Radar Mil. Radar (PAR) Space Others Total Market without Digital Gain [dB] Market mio$ GaAs MESFET 2003 1477 3233 Package GaAs Technology GaAs HEMT
Discrete Transistors
1999
Fig. Wireless Products Package roadmap GaAs 06/00
2000
2001
Source: Strategy Analytics 12/99
MMICs Productts Receiver MMICs Power FETs Noise FETs 1985 1990 1995
Switches Mobile Phone Modules LMDS Modules Flip Chip Production 2000 2005
Packages Modules
technology roadmap covers packaging resources strategy. Low-cost packages with pins required today's GaAs chips. special focus packages with heat sink technology. GaAs MMIC packages (Fig. (SOT derivative, W/12 pins), (TQFP derivative, W/16 pins), (SOT derivative, MMICs). very interesting packages, again derived from especially suitable DECT/Cordless MMICs. These packages only quarter size current counterparts exhibit excellent price-performance ratios. TSSOP TSSOP packages were introduced 1998 heat-sink versions. Linear power amplifiers mixer cell CMH0 CDMA applications will leadless VQFN packages with pins. addition, package will house GaAs switches. TSFP will used generation GaAs low-noise transistors LNBs. with input/output matching including active passive components, preferably chip form, desirable applications mobile communication (Infineon began with these developments with goal going into production 2000).
Cellular Mobile Telephones
Power Amplifier (PA) MMICs Modules cellular telephones whether GSM/PCN U.S., Korean, Nippon CDMA TDMA system module with input/output matching designed single dual/triple bands based ceramic/FR4 substrates with metal plastic molding. system specifications such GPRS, EDGE UMTS (and W-CDMA) require different power amplifier modules. GSM/PCN/PCS market right with CMG20G, dual/triple band MESFET module (Table using ceramic substrate metal lid. CGM20G will production January 2001, first samples will available October final samples December 2000. Further modules using technology planned GSM/EDGE/UMTS market. development US-CDMA market single band modules called CGM800C CGM1900C, using ceramic substrate plastic molding.
CGM800C designed US-CDMA/AMPS frequency band CGM1900C 1900 band. First samples CGM800C available, production will start 2001. CGM1900C follows this time schedule months. meet Nippon-CDMA Korean-PCS requirements, plan introduce modules (CGM801C CGM1901C) with optimized output power linearity performance. State-of-the-art power-added-efficiency performance given Infineon's PAs. will addressed with tri-band module CGM22TA (800&1900TDMA/GSM/AMPS). This module base platform further design steps such TDMA/EDGE requirements. Production planned third quarter 2001 first samples will available 2000. wireless module vision design produce complete transmit receive module which also includes antenna switch, antenna filtering.
Cellular Power Amplifier (PA) MMIC's mobile telephones extremely dynamic. Infineon's broad range MMICs covers well-established telephone standards. Infineon introduced broadband especially GSM/PCN/ AMPS applications. They called CGY98 (MESFET, 595) CGY99 (MESFET, P-TSSOP 10-2), listed Table below. show excellent both frequency ranges (GSM/PCN). They recommended candidates very high-volume production their excellent price-performance ratio.
Product CGY98
Freq [MHz] 1800
Pout [dBm]
Gain [dB]
Package
Technology MESFET
Product CGM2OG CGM800C CGM1900C CGM22TGA
Application PCN/PCS CDMA AMPS CDMA TDMA/GSM/AMPS TDMA
Freq [MHz] 1800/1900 1900 1900
Pout [dBm] 34.5 33.5 30.0 32.0 29.0 29.0 29.0
Gain [dB] 31.3
Supply Voltage 3.2V 3.2V 3.2V 3.2V
Technology MESFET
CGY99
1800
P-TSSOP10-2
MESFET
Table Typical data GaAs broadband
Cordless Power Amplifier MMICs portfolio cordless applications summarized Table most popular currently production CGY196, 3-stage MMIC package. first real 2-battery-cell CGY197, currently ramping
Table Power amplifier modules
Product CGY196 CGY197
Application CDMA CDMA
Freq [MHz] 1900
Pout [dBm]
Gain [dB]
Package VQFN24 VQFN24
Technology InGaP-HBT InGaP-HBT
Table Cordless power amplifier
Linear Power Amplifier MMICs (PAs) becoming more more important future mobile phone systems W-CDMA EDGE. These highly linear systems only addressed GaAs power amplifiers. High Power Added Efficiency (PAE) also required achieve long standby, talk data transfer times with communicators. Both requirements fulfilled with GaAs Hetero Bipolar Transistors (HBTs).
optimized linear systems (Table CGB91 CGB191 2-stage 3-stage cellular bands, respectively, with integrated input matching chip reduce part count. Both chips optimized supply voltage idle current high Power Added Efficiencies. improve low-power mode, mode switch been integrated chip. CGB93 spin-off from CGB91, optimized CGB192 also fulfils requirements phone standards W-CDMA UMTS. HBT-PAs recommended low-cost, high-volume products come leadless VQFN 20/24 package. These VQFN 20/24 package represent cost-effective alternative previously mentioned modules.
version T628 with chip dimensions only (Fig. achieves same performance CGB240 comes with leadless bumps optimized mounting ceramic modules. Please Table details.
FlipChip Dimensions:
Solder Bump Under Bump Metallization Metallization Chip Passivation GaAs
Product CGB91
Application CDMA TDMA AMPS EDGE CDMA TDMA EDGE N-CDMA W-CDMA UMTS
Freq [MHz] 1900 1900 1900 1950
Pout [dBm] 29.5 29.5 27.5 26.5
Gain [dB] 26.5
Package VQFN24
Technology
InGaP-HBT
Bluetooth T628B flip-chip bumps
CGB191
VQFN24
InGaP-HBT
Receiver Switch Solutions CGB93 CGB192 VQFN24 VQFN20 InGaP-HBT InGaP-HBT mixer MMIC normally driven BFP520 SIEGET low-noise amplifier transistor. July 2000 successor product CMY212, which combines CMY210 mixer cell with integrated amplifier, introduced used many major CDMA terminals. CMY212 combines excellent (typically input) with LO-power demand typically conversion gain typically specific internal switch circuit Bluetooth Power Amplifiers consumer market long-range Bluetooth applications (class high-volume market GaAs power amplifiers. better performance GaAs compared with SiGe PAs, longer battery life achieved. Bluetooth HBT-PA with analog input address four power steps dBm, low-power mode (class CGB240 shown excellent values more than 2400 very idle currents low-power modes. harmonics less than offer possibility low-cost filters. CMY91 Pout [dBm] [mA] CMY210 CMY212 CGB240 T628B Bluetooth Bluetooth 2400 2400 2400 2400 2400 TSSOP10 Flip-chip InGaP-HBT CMY213 InGaP-HBT CMY82 CMHO819 CDMA N-CDMA CDMA 50.2500 1900 22.5 26.5 26.5 -9.8 -9.8 SCT598 VQFN24 VQFN24 VQFN24 MESFET MESFET HEMT HEMT TDMA/ CDMA CDMA CDMA 800.2500 500.2500 50.2500 Product Appl. Freq [MHz] Conversion Gain [dB] LoDrive [dBm] Level [dBm] Noise figure [dB] 8.10.5 Package Technology SCT598 MESFET MESFET MESFET configuration (Table Also first samples next generation receiver MMIC CDMA, fully integrated dual-band tri-mode receiver CMH0819 (leadless VQFN-24 package) available now. This device based HEMT technology assure highest linearity power consumption LO-input-power levels.
Table Linear power amplifier MMICs
Product
Application
Freq [MHz]
Gain [dB]
Package
Technology
Table Bluetooth
Table GaAs mixer receiver MMICs
switch MMICs ultra-small package SOT-363 (for SP2T leadless package MLF-16 (for SP4T/SP5T) realization phase (samples available 2000). switch MMICs based multigate HEMT-FETs, optimized power handling, insertion loss high isolation. These switches perfectly suited GSM/PCN antenna switches well switching between different bands modes within chain transceivers. Please Table product details.
Product CSY210 (SP2T) CSH210 (SP2T) CSH210P (SP2T) CSH410 (SP4T) CSH510 (SP5T)
Application Multi-purpose
Freq [MHz] 900/1800
Insertion loss [dB] 0.6/0.9
Rx/Tx Isolation [dB] 17/13
P-1dB [dB] Input 36/36
Package SOT598 SOT363 SOT363 MLF16 MLF16
Technology MESFET HEMT HEMT HEMT HEMT
Multi-purpose/ 800.1000 1000.2000 Multi-purpose 800.1000 power/GSM 1000.2000 GSM900 DCS1800 GSM900 DCS1800 1000 2000 1000 2000
Wireless Local Loop (Bluetooth) also engaged wireless local loop (WLL). This last-mile technology predicted have strong growth over next several years. offers numerous benefits over competitive wireless solutions. drivers technology feature faster deployment, reduced capital expense, better coverage flexibility, easy transition mobile service. Infineon developed chip including three-stage linear CGY353, up-converter (CGY340) with on-chip attenuator finally CGY360, down-converter with similar circuit configuration (Table Derivatives down-converters optimized lower frequency applications also available.
Table GaAs switches
Low-Noise Transistors CFH400T CFH800T developed first stage CDMA/PCS UMTS mobile phone applications base stations. Also low-noise amplifier called CFH120 based former HEMTs CFY77/CFH77. This device useful CFH120-08 version second stage (low-noise block satellite receivers). CFH120-10 version used mixer GHz. Table presents whole low-noise amplifier family.
Product CFH400T CFH800T CFH120-08 CFH120-10
Application CDMA/PCS/UMTS CDMA/PCS/UMTS i.e. Sat-com i.e. Sat-com
Frequency
Gain [dB] 16.5 16.5
[dB]
Package TSFP4 TSFP4
Technology HEMT HEMT HEMT HEMT
Product CGY340 CGY353 CGY360
Type Up-converter Down-converter
RF-Freq (GHz)
(MHz) 1300
Linear Pout (dBm)
Gain (dB) -50/-29
Package MV16
Technology MESEFET MESEFET MESEFET
1300
-13/3/19
MW16 MV16
development, CFH120 TSFP4
Table Typical data GaAs chip
Table Low-noise GaAs HEMTs
Point Multi-Point (LMDS) (LMDS) broadband wireless access technology (24-42 GHz) "last mile". provides wide range high-value quality services like high-speed Internet access, video-ondemand, videoconferencing, corporate access telephony homes businesses. complete chip sets (Table application LMDS transceiver systems. Both chip sets 24-27 27-31 comprise two-stage high-power amplifier (HPA) offering output power compression (small signal gain dB), two-stage medium-power amplifier (MPA) small signal gain), three-stage with noise figure below conjunction with gain, single balanced mixer with conversion loss frequency multipliers (doubler 24-27 tripler 27-31 GHz). Both microstrip coplanar technologies used these millimeter-wave MMIC chip sets. third complete chip 38-42 broadband wireless access systems will available beginning 2001. millimeter-wave transceiver architecture including MMICs, filters, couplers, etc. shown Fig.
Mixer
IF-Amp.
Rx-IF
Product Mixer Application LMDS balanced mixer Frequency multiplier Low-noise amplifier Medium-power amplifier High-power amplifier Freq [GHz] P-1dB [dBm] 24-27 27-31 24-28 27-33 24-32 24-27 27-31 24-27 27-31 -15dBc -17dBc 12.0 12.0 22.0 22.0 27.0 27.0 Gain [dB] -8.0 -12.0 20.0 20.0 15.0 15.0 11.0 11.0 Diverse Package bare Technology HEMT HEMT HEMT HEMT HEMT
Multiplier
Doubler Tripler 3-stage
12-14 bare 9-11 bare bare bare
Hybrid
Tx-IF
IF-Amp.
2-stage 2-stage
Mixer
Table LMDS chip
Detector
Temp. sense
Fig. LMDS block circuit diagram
Distance Radar
future safety systems pioneering distance radar, which allows detection pedestrian distance even under critical weather conditions. equipment, used upper-class cars, based hybrid circuits waveguide technology varactortuned Gunn elements source, cost-effective second generation based pure planar technology been developed large-volume applications. intensive work, Infineon Technologies realized complete planar FMCW front-end. chip consists different GaAs HEMT MMICs, MPA, Schottky diodes used harmonic mixer double-balanced mixer diodes, finally (see Table 11). complete multi-chip module includes master board with bias control, described chip set, patch antenna passive components (see block circuit diagram distance radar Fig. This first single-lens radar showed impressive performance during on-road system tests. MMICs production now.
Product TX-MMIC Doubler-38/77 TwinMPA-77 VCO-38 MPA-2 VCO-3 BAT14-077S/D
Application Transmit MMIC Frequency doubler Twin medium-power amplifier Voltage controlled oscillator Medium-power amplifier Voltage controlled oscillator mixer diode/ harmonic mixer
Freq [GHz] 38/77
Pout [dBm]
Gain [dB] conversion gain
Technology HEMT HEMT HEMT HEMT HEMT HEMT Silicon Schottky diode
Table GaAs chips diode application (bare dies, package)
MMIC Power Splitter MMIC
Transfer Mixer Path Antenna
Space
than years been involved development production phased array radar (PAR) space components such LNAs, switches, phase shifters, variable-gain amplifiers, high-power amplifiers (HPAs) driver amplifiers bands. core competence here implementation
Other Channels
Channel
HPAs with output power 8-10 three frequency bands. outstanding quality DIOM MESFET process major characteristic solution.
Foundry Service Custom Design
VTune
Channel 15.1
long-term partnership with customers, offer foundry service customized specific design GaAs components. This particularly attractive, Infineon offer enhanced Si/SiGe GaAs MESFET/HEMT/HBT processes from single source, guaranteeing optimum choice certain application.
Harmonic Mixer
Fig. distance radar block circuit diagram
streamlined requirement 9000 (certification received 1997) incorporates methodology objectives EFQM model. strongly influenced demands automotive industry. ensure robust processes designs, modern methods quality management, such FMEA (failure mode effect analysis), (statistical process control) (design experiments) govern daily work cross-functional qualification teams. Products released delivery still subjected periodic reliability monitoring.
Infineon's 6-inch GaAs Wafer
GaAs producers confronted with truly global market extraordinary dynamic business segment, namely wireless communication. specific features permanent system innovations, steep production ramp-up curves price levels consumer market. successful approach, i.e. 100% production orientation flexibility combined with innovation leadership, meet this challenge. Today Infineon handful other suppliers U.S.A. Japan achieve annual production volumes 50,000 four-inch wafer starts. This resulted more than million components 1999, which were MMICs. requirements, i.e. exceed market CAGR that predicted, develop leading position area products, Infineon opened 6-inch GaAs plant 1999. started January 1999 full-scale production will achieved September 2000. plant located Munich, where Infineon concentrates wafer facilities. Production synergies SiGe bipolar/MOS/BICMOS lines sensor micro-machining lines part business strategy. three GaAs process technologies MESFET, HEMT transferred 6-inch production equipment, while HEMT will still produced 4-inch wafers until middle next year.
Logistics
than billion Discrete components million GaAs components 1999 global market business environment, logistics major business processes. Some most important challenges summarized below:
Major emphasis been directed link wafer fabrication facilities Munich (Germany) Villach (Austria) backend facilities Regensburg (Germany), Singapore Malacca (Malaysia) with Logistic Headquarters Regensburg. This means that worldwide request customers delivery ability permanently optimized guarantee short response time maximum delivery flexibility.
meet market requirements, have installed worldwide online software network combined with specific customer-oriented logistic management. progress measured continuously with well-defined performance indicators.
Individual strategies supply chains, finally, arranged agreed cooperation with customers.
product portfolio with manufacturing start GaAs development start GaAs modules. result, major GaAs products based MESFET, HEMT,
Quality Management Business Philosophy
management policy pursue based essentially following four mainstays:
technology delivered discrete components MMICs enhanced packages, dies, modules certain applications. addition, 6-inch wafer started production. Broad application know-how been built tuner cable cellular cordless phones, WLAN WLL, PT(M)MP automotive radar circuits, plus professional applications such space. business wireless fixed communication, maintain strong, continuous commitment anticipating meeting needs expectations customers worldwide. manufacturer both enhanced GaAs components, able guarantee very best products service. With worldwide presence, Infineon Technologies assures excellent product, application system support wherever solutions chosen.
Customer Orientation; this includes continuous improvements quality standards services. Staff Management Orientation; this calls consistent education training leaders members. Process Orientation; cross-functional bottom-up teamwork understand, describe improve processes. Strength Competitive Position; this includes permanent benchmarking working become Number One.

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