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April 2000 PRELIMINARY FDS6609A P-Channel Logic Level PowerT
Top Searches for this datasheetFDS6609A April 2000 PRELIMINARY FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required. Features -6.3 RDS(ON) 0.032 RDS(ON) 0.05 -4.5 gate charge Fast switching speed High performance trench technology extremely RDS(ON) High power current handling capability Applications DC/DC converter Load switch Motor Drive SO-8 Absolute Maximum Ratings Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TA=25oC unless otherwise noted Parameter Ratings (Note Units -6.3 +150 Power Dissipation Single Operation (Note (Note (Note TSTG Operating Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note (Note °C/W °C/W Package Marking Ordering Information Device Marking FDS6609A Device FDS6609A Reel Size 13'' Tape width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS6609A FDS6609A Electrical Characteristics Symbol BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on) 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note Test Conditions -250 -250 Referenced 25°C Units Characteristics -100 -1.5 0.027 0.04 0.04 14.5 -7.2 -2.1 (Note mV/°C mV/°C 0.032 0.05 0.54 Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note VGS, -250 -250 Referenced 25°C -7.0 -5.5 -4.5 -7.0A, TJ=125°C -7.0 ID(on) Ciss Coss Crss td(on) td(off) Dynamic Characteristics Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN Drain-Source Diode Characteristics Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage -0.76 -1.2 Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design. 50°/W when mounted copper 105°/W when mounted copper 125°/W when mounted minimum pad. Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% FDS6609A) FDS6609A Typical Characteristics -10.0V -5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -3.5V -4.0V -4.5V -ID, DIRAIN CURRENT -5.0V -6.0V -7.0V -8.0V -9.0V -10.0V -4.5V -4.0V -ID, DRAIN CURRENT -3.5V -3.0V -VDS, DRAIN SOURCE VOLTAGE Figure On-Region Characteristics. Figure On-Resistance Variation with Drain Current Gate Voltage. 0.15 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V -3.6A 0.12 0.09 0.06 0.03 -VGS, GATE SOURCE VOLTAGE JUNCTION TEMPERATURE Figure On-Resistance Variation with Temperature. -ID, DRAIN CURRENT -VGS, GATE SOURCE VOLTAGE Figure On-Resistance Variation with Gate-to-Source Voltage. -IS, REVERSE DRAIN CURRENT 0.01 0.001 -VSD, BODY DIODE FORWARD VOLTAGE Figure Transfer Characteristics. Figure Body Diode Forward Voltage Variation with Source Current Temperature. FDS6609A) FDS6609A Typical Characteristics -7.2A -15V -10V 1500 CISS 1200 COSS CRSS GATE CHARGE (nC) -VDS, DRAIN SOURCE VOLTAGE Figure Gate Charge Characteristics. RDS(ON) LIMIT 100µs 10ms 100ms -10V SINGLE PULSE 0.01 -VDS, DRAIN-SOURCE VOLTAGE Figure Capacitance Characteristics. SINGLE PULSE 125°C/W 25°C 0.001 0.01 TIME (sec) 1000 Figure Maximum Safe Operating Area. Figure Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE RJA(t) r(t) 0.05 0.02 0.01 SINGLE PULSE P(pk) RJA(t) Duty Cycle, 0.01 0.001 0.0001 0.001 0.01 TIME (sec) 1000 Figure Transient Thermal Response Curve. Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design. FDS6609A) SO-8 Tape Reel Data Package Dimensions SOIC(8lds) Packaging Configuration: Figure Packaging Description: ROST DEVICES ROST ADIO NUMB PEEL STREN _gms Antistatic Cover Tape Label SOIC-8 parts shipped tape. carrier tape made from dissipative (carbon filled) polycarbonate resin. cover tape multilayer film (Heat Activated Adhesive nature) primarily composed polyester film, adhesive layer, sealant, anti-static sprayed agent. These reeled parts standard option shipped with 2,500 units 330cm diameter reel. reels dark blue color made polystyrene plastic (antistatic coated). Other option comes units 177cm diameter reel. This some other options further described Packaging Information table. These full reels individually barcode labeled placed inside standard intermediate (illustrated figure 1.0) made recyclable corrugated brown paper. contains reels maximum. these boxes placed inside barcode labeled shipping which comes different sizes depending number parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 9959 F852 9959 F852 9959 F852 9959 SOIC (8lds) Packaging Information Packaging Option Packaging type Reel/Tube/Bag Reel Size Dimension (mm) Weight unit (gm) Weight Reel (kg) Note/Comments Standard flow code) 2,500 343x64x343 5,000 0.0774 0.6060 L86Z Rail/Tube 530x130x83 30,000 0.0774 F011 4,000 343x64x343 8,000 0.0774 0.9696 D84Z 184x187x47 1,000 0.0774 0.1182 F852 9959 SOIC-8 Unit Orientation 343mm 342mm 64mm Standard Intermediate Label F63TNR Label sample LOT: CBVK741B019 FSID: FDS9953A QTY: 2500 SPEC: F63TNLabel F63TN Label Label (F63TNR)3 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: SOIC(8lds) Tape Leader Trailer Configuration: Figure Carrier Tape Cover Tape Components Trailer Tape 640mm minimum empty pockets Leader Tape 1680mm minimum empty pockets July 1999, Rev. SO-8 Tape Reel Data Package Dimensions, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure User Direction Feed Dimensions millimeter type SOIC(8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 10.25 5.50 +/-0.05 +/-0.1 +/-0.1 +/-0.10 0.450 +/0.150 +/-0.3 0.06 +/-0.02 Notes: dimensions determined with respect EIA/Jedec RS-481 rotational lateral movement requirements (see sketches maximum Typical component cavity center line 0.5mm maximum maximum component rotation 0.5mm maximum Sketch (Side Front Sectional View) Component Rotation Sketch (Top View) Typical component center line Sketch (Top View) Component lateral movement SOIC(8lds) Reel Configuration: Figure Component Rotation Measured detail Diameter Option detail Diameter Option Measured DETAIL Dimensions inches millimeters Tape Size 12mm Reel Option 7.00 177.8 13.00 0.059 0.059 +0.020/-0.008 +0.5/-0.2 +0.020/-0.008 +0.5/-0.2 0.795 20.2 0.795 20.2 2.165 7.00 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.724 18.4 (LSL-USL) 0.469 0.606 11.9 15.4 0.469 0.606 11.9 15.4 12mm 1998 Fairchild Semiconductor Corporation July 1999, Rev. SO-8 Tape Reel Data Package Dimensions, continued SOIC-8 Code Scale letter size paper Dimensions shown below inches [millimeters] Part Weight unit (gram): 0.0774 September 1998, Rev. TRADEMARKS following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. Quiet SeriesFAST® DISCLAIMER QFETQSQT OptoelectronicsQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHC VCX FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. 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Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. Preliminary First Production Identification Needed Full Production Obsolete Production This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only. Rev. Other recent searchesWS02-SGWC1 - WS02-SGWC1 WS02-SGWC1 Datasheet WP1533AA - WP1533AA WP1533AA Datasheet SRD-W152 - SRD-W152 SRD-W152 Datasheet PES3T3 - PES3T3 PES3T3 Datasheet AS138-59 - AS138-59 AS138-59 Datasheet 2SD2106 - 2SD2106 2SD2106 Datasheet
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