MIE-544L3 infrared emitting diode GaAlAs GaAlAs technology molded wate
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GaAlAs HIGH POWER PACKAGE INFRARED EMITTING DIODE
MIE-544L3 infrared emitting diode GaAlAs GaAlAs technology molded water clear plastic package.
7.62 (.300)
MIE-544L3
Unit (inches
Package Dimensions
5.05 (.200)
5.47 (.215)
5.90 (.230)
1.00 (.040) FLAT DENOTES CATHODE
Features
23.40 MIN. (.920) 0.50 TYP. (.020)
High radiant power high radiant intesity Suitable high pulse current operation Standard 5mm) package Peak wavelength =880 Good spectral matching Si-Photodetecto Radiant angle
2.54 (.100) 1.00MIN (.040)
Notes Tolerance 0.25 (.010") unless otherwise noted. Protruded resin under flange (.059") max. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings TA=25oC
Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating +100 +100 260oC seconds
Unit
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-544L3
Optical-Electrical Characteristics TA=25oC
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Min. Max. Unit mW/sr
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity
Forward Current (mA)
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION Output Power Value IF=20mA
Ambient Temperature (oC) FIG.2 FORWARD CURRENT AMBIENT TEMPERATURE
Forward Current (mA)
Forward Voltage FIG.3 FORWARD CURRENT FORWARD VOLTAGE Output Power Relative Value F=20mA Relative Radiant Intensity
Ambient Temperature FIG.4 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE
Forward Current (mA) FIG.5 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.6 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
11/17/2000
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