MIE-534H4 GaAlAs infrared having peak wavelength 850nm. features ultra
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GaAlAs HIGH POWER PACKAGE INFRARED EMITTING DIODE
MIE-534H4 GaAlAs infrared having peak wavelength 850nm. features ultra-high power, high response speed molded package with higher radiant intensity. addition improving ratio applied optical systems, MIE-534H4 greatly improved long-distance characteristics well significantly increased range applicability
NOTE 1.00 (.040) 7.62 (.300) 5.05 (.200)
MIE-534H4
Unit: (inches)
Package Dimensions
5.47 (.215)
5.90 (.230)
FLAT DENOTES CATHODE
Features
Ultra-High radiant intensity High response speed Standard 5mm) package Peak wavelength =850 Radiant angle
0.50 TYP. (.020)
23.40 (.920)
1.00MIN. (.040) 2.54NOM. (.100) NOTE
Application
Data communication
Notes Tolerance 0.25 (.010") unless otherwise noted. Protruded resin under flange (.059") max. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings TA=25oC
Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating +100 +100 260oC seconds
Unit
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-534H4
Optical-Electrical Characteristics TA=25oC
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Rise Time Fall Time
Relative Radiant Intensity
Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA IF=50mA IF=50mA
Symbol
Min.
Max.
Unit mW/sr nsec nsec
Typical Optical-Electrical Characteristic Curves
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION
Forward Current (mA)
Output Power Value IF=20mA
Forward Voltage FIG.2 FORWARD CURRENT FORWARD VOLTAGE
Ambient Temperature FIG.3 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE
Output Power Relative Value IF=20mA
Relative Radiant Intensity
Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
11/17/2000
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