MIE-514H4 GaAlAs infrared having peak wavelength feature ultra-high po
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GaAlAs HIGH POWER PACKAGE INFRARED EMITTING DIODE
MIE-514H4 GaAlAs infrared having peak wavelength feature ultra-high power, high response speed molded water clear plastic package, MIE-514H4 have greatly improved long-distance characteristics well significantly increased range applicability.
1.00 (.040) NOTE 7.62 (.300) 5.05 (.200)
MIE-514H4
Unit: (inches)
Package Dimensions
5.47 (.215)
5.90 (.230)
Features
FLAT DENOTES CATHODE
Ultra-High radiant incidence High response speed High modulation bandwidth Standard package Radiation angle Peak wavelength
1.00MIN. (.040) 2.54NOM. (.100) NOTE 0.50 TYP. (.020) 23.40 (.920)
Applications
Free transmission systems with high -speed response
NOTES Tolerance 0.25 (.010") unless otherwise noted. Protruded resin under flange (.059") max. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings TA=25oC
Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating +100 -55oC +100oC 260oC seconds
Unit
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-514H4
Optical-Electrical Characteristics TA=25oC
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth Half View Angle Rise Time Fall Time
Relative Radiant Intensity
Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA IF=50mA IF=50mA
Symbol
Min.
Typ.
Max.
Unit mW/sr nsec nsec
21/2
Typical Optical-Electrical Characteristic Curves
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION
Forward Current (mA)
Output Power Value IF=20mA
Forward Voltage(V) FIG.2 FORWARD CURRENT FORWARD VOLTAGE Output Power Relative Value IF=20mA Relative Radiant Intensity
Ambient Temperature FIG.3 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE
Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
11/17/2000
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