MIE-406L3U infrared emitting diode with GaAlAs GaAlAs technology molde
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GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
MIE-406L3U infrared emitting diode with GaAlAs GaAlAs technology molded pastel blue transparent plastic package.
MIE-406L3U
Unit (inches
4.75 (.187)
Package Dimensions
CATHODE INDICATOR
5.60 (.221)
(.028) (.059 25.00 (.984) TYP. (.020) 1.00 (.040) 2.54 (.100) 5.46 (.215)
Features
Standard TO-46 package Peak wavelength Good spectral matching si-photodetector Radiant angle
Notes Tolerance 0.25 (.010") unless otherwise noted. Protruded resin under flange (.059") max. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings TA=25oC
Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating +100 -55oC +100oC 260oC seconds
Unit
Unity Opto Technology Co., Ltd.
11/18/2000
MIE-406L3U
Optical-Electrical Characteristics TA=25oC
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA IF=20mA IF=20mA IF=20mA Symbol 21/2
Forward Current (mA)
Min.
Max. 1.70
Unit mW/sr deg.
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity
1040 Wavelength FIG.1 SPECTRAL DISTRIBUTION
Output Power Value =20mA
Forward Current (mA)
Ambient Temperature TA(oC) FIG.2 FORWARD CURRENT AMBIENT TEMPERATURE
Forward Voltage FIG.3 FORWARD CURRENT FORWARD VOLTAGE Output Power Relative Value =20mA
Ambient Temperature FIG.4 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE
Relative Radiant Intensity
Forward Current (mA) FIG.5 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.6 RADIATION DIAGRAM
11/18/2000
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