MIE-404L3 infrared emitting diode with GaAlAs GaAlAs technology molded
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GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE
MIE-404L3 infrared emitting diode with GaAlAs GaAlAs technology molded water clear plastic package.
5.60 (.221) 4.75 (.187)
MIE-404L3
Unit (inches
CATHODE INDICATOR
Package Dimensions
(.028) 5.46 (.215)
(.059
Features
25.00 (.984)
TYP. (.020)
Standard TO-46 package Peak wavelength Good spectral matching si-photodetector Radiant angle
2.54 (.100) 1.00 (.040)
Notes Tolerance .010" unless otherwise noted. Protruded resin under flange .031"max. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings
TA=25 Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating +100 +100 260oC seconds
Unit
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-404L3
Optical-Electrical Characteristics
TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA IF=20mA IF=20mA IF=20mA Symbol 21/2 Min. Max. 1.70 Unit mW/sr deg.
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity Forward Current (mA)
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION Relative Radiant Intensity
Ambient Temperature TA(oC) FIG.2 FORWARD CURRENT AMBIENT TEMPERATURE
Forward Current (mA)
Forward Voltage FIG.3 FORWARD CURRENT FORWARD VOLTAGE Relative Radiant Intensity
Ambient Temperature (oC) FIG.4 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE Relative Radiant Intensity
Forward Current (mA) FIG.5 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.6 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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