MIE-184H4K GaAlAs infrared having peak wavelength 850nm. features ultr
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GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
MIE-184H4K GaAlAs infrared having peak wavelength 850nm. features ultra-high power, high response speed molded package with higher radiant intensity. addition improving ratio applied optical systems, MIE-184H4K greatly improved long-distance characteristics well significantly increased range applicability
3.00 (.118) 3.30 (.130) 1.40 (.055) 1.60 (.063) 1.70 (.067) 1.80 (.071) 2.40 (.094)
MIE-184H4
Package Dimensions
Unit (inches
NOTE
Features
Ultra-High radiant intensity High response speed Special 1.8mm package, radiant angle Peak wavelength =850
2.54 NOM. (.100) 0.50 TYP. (.020)
25.40MIN. (1.000)
1.00MIN. (.040)
NOTE
Application
Data communication
Notes Tolerance 0.25 (.010") unless otherwise noted. Protruded resin under flange (.015") max. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings
TA=25 Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating +100 -55oC +100oC 260oC seconds
Unit
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-184H4K
Optical-Electrical Characteristics
TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Rise Time Fall Time Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA IF=50mA IF=50mA Symbol Min. Max. Unit mW/sr nsec nsec
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity
Forward Current (mA)
Output Power Value IF=20mA
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION
Forward Voltage FIG.2 FORWARD CURRENT FORWARD VOLTAGE Output Power Relative Value IF=20mA
Ambient Temperature FIG.3 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE
Relative Radiant Intensity
Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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