MIE-144H4 GaAlAs infrared emitting diode, molded clear, lensed side lo
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GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-144H4 GaAlAs infrared emitting diode, molded clear, lensed side looking package. MIE-144H4 provides broad range intensity selection.
1.22 (.048) 1.66±0.08 (.065±.003) 0.80 (.032) 214.30MIN. (.563) 0.5TYP. (.020) 4.00±0.08 (.156±.003) 1.80 1.80 (.071) (.071) 4.12 (.162) 1.50 (.059)
MIE-144H4
Unit: inches
1.50 (.059)
Package Dimensions
1.10 (.043) 0.75 (.030)
Features
Selected specific on-line intensity radiant intensity ranges
1.0MIN. (.039) 2.54±0.08 (.100±.003) (SEE NOTE
cost plastic side looking package
Notes dimensions millimeters.(inches). Protruded resin under flange (0.059") max. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings
TA=25oC Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating +100 -55oC +100oC 260oC seconds
Unit
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-144H4
Optical-Electrical Characteristics
TA=25oC Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth Half View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbol 21/2 Min. Max. Unit mW/cm2
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION Relative Radiant Intensity
Forward Current (mA)
Forward Voltage FIG.2 FORWARD CURRENT FORWARD VOLTAGE Relative Radiant Intensity Relative Radiant Intensity
Ambient Temperature FIG.3 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE
Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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