MIE-114H4 AlGaAs infrared emitting diode molded clear, lensed side loo

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MIE-114H4 AlGaAs infrared emitting diode molded clear, lensed side loo

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AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114H4 AlGaAs infrared emitting diode molded clear, lensed side looking package MIE-114H4 provides broad range intensity selection
5.72±0.2 (.225±.008)
MIE-114H4
Unit: inches
Package Dimensions
4.45±0.20 (.175±.008) 2.22 (.087) (.087) 1.22±0.10 (.048±.004) 1.55±0.02 (.061±.008) 0.76±0.10 (.030±.008)
12.7 MIN. (.500)
Features
CATHODE
TYP. (.020) MIN. (.040) 2.54 NOM. (.100) NOTE
High power Mechanically spectrally matched MID-11422 phototransistor
NOTES Tolerance 0.25 (.010") unless otherwise noted. Lead spacing measured where leads emerge from package.
Absolute Maximum Ratings
TA=25 Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating -55oC 100oC seconds
Unit
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-114H4
Optical-Electrical Characteristics
TA=25oC Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbol 21/2 Min. Max. Unit mW/cm2
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION Relative Radiant Intensity
Forward Current (mA)
Forward Voltage FIG.2 FORWARD CURRENT FORWARD VOLTAGE Relative Radiant Intensity Relative Radiant Intensity
Ambient Temperature FIG.3 RELATIVE RADIANT INTENSITY AMBIENT TEMPERATURE
Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002

MIE-114H4 AlGaAs infrared emitting diode molded clear, lensed side loo

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