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Integrated Relay / Solenoid Driver

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MDC3105LT1 / D
Advance Information
Integrated Relay / Solenoid Driver
Rating Power Supply Voltage Recommended Operating Supply Voltage Input Voltage Reverse Input Voltage Output Sink Current Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Symbol VCC VCC Vin(fwd) Vin(rev) IO TJ TA Tstg
MDC3105LT1
Motorola Preferred Device
RELAY / SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
INTERNAL CIRCUIT DIAGRAM Vout Vin 1.0 k 6.8 V (1) 33 k GND (2) (3)
Value 6.0 2.0-5.5 6.0 -0.5 300 150 -40 to +85 -65 to +150
Unit Vdc Vdc Vdc Vdc mA °C °C °C
THERMAL CHARACTERISTICS
Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol PD RqJA
Max 225 556
MDC3105LT1
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS
TYPICAL APPLICATION-DEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS
Characteristic Propagation Delay Times: High to Low Propagation Delay Figures 1, 2 (5.0 V 74HC04) Low to High Propagation Delay Figures 1, 2 (5.0 V 74HC04) High to Low Propagation Delay Figures 1, 3 (3.0 V 74HC04) Low to High Propagation Delay Figures 1, 3 (3.0 V 74HC04) High to Low Propagation Delay Figures 1, 4 (5.0 V 74LS04) Low to High Propagation Delay Figures 1, 4 (5.0 V 74LS04) Transition Times: Fall Time Figures 1, 2 (5.0 V 74HC04) Rise Time Figures 1, 2 (5.0 V 74HC04) Fall Time Figures 1, 3 (3.0 V 74HC04) Rise Time Figures 1, 3 (3.0 V 74HC04) Fall Time Figures 1, 4 (5.0 V 74LS04) Rise Time Figures 1, 4 (5.0 V 74LS04) Input Slew Rate(1) Symbol tPHL tPLH tPHL tPLH tPHL tPLH tf tr tf tr tf tr V / t in VCC 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 Min - - - - - - - - - - - - TBD Typ 55 430 85 315 55 2385 45 160 70 195 45 2400 - Max - - - - - - ns - - - - - - - V / ms Units ns
1. Minimum input slew rate must be followed to avoid overdissipating the device.
tr VCC GND VZ VCC GND
Figure 1. Switching Waveforms
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ + AROMAT TX2-L2-3 V
Vout (3) MDC3105LT1 Vin (1) 1k 6.8 V 33 k 6.8 V
Vout (3) MDC3105LT1 1k 33 k Vin (1)
74HC04 OR EQUIVALENT
GND (2)
Figure 2. A 3.0-V, 200-mW Dual Coil Latching Relay Application with 5.0 V-HCMOS Interface
+3.0 VDD +3.75 Vdc +4.5 VCC +5.5 Vdc
+ + AROMAT TX2-L2-3 V
Vout (3) MDC3105LT1 Vin (1) 1k 6.8 V 33 k 6.8 V
Vout (3) MDC3105LT1 1k 33 k Vin (1)
74HC04 OR EQUIVALENT
GND (2)
Figure 3. A 3.0-V, 200-mW Dual Coil Latching Relay Application with 3.0 V-HCMOS Interface
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ + AROMAT TX2-L2-3 V
Vout (3) MDC3105LT1 BAL99LT1 1k 6.8 V 33 k Vin (1) 6.8 V
Vout (3) MDC3105LT1 1k 33 k Vin (1) BAL99LT1
74LS04
GND (2)
Figure 4. A 3.0-V, 200-mW Dual Coil Latching Relay Application with TTL Interface
+4.5 TO +5.5 Vdc
+ AROMAT R1 TX2-5 V - R2
+ AROMAT TX2-5 V -
74HC04 OR EQUIVALENT
Vin (1)
86 mA 300 mA Max Io spec. GND (2)
Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MDC3105LT1
TYPICAL OPERATING WAVEFORMS
(Circuit of Figure 5)
3.5 V in (VOLTS) IC (mA) 10 30 50 TIME (ms) 70 90
25 10 30 50 TIME (ms) 70 90
Figure 6. 20 Hz Square Wave Input
Figure 7. 20 Hz Square Wave Response
7 Vout (VOLTS) IZ (mA) 10 30 50 TIME (ms) 70 90
12 10 30 50 TIME (ms) 70 90
Figure 8. 20 Hz Square Wave Response
Figure 9. 20 Hz Square Wave Response
0 1E-5
1E-4 1E-3 INPUT CURRENT
Figure 10. Pulsed Current Gain Motorola Small-Signal Transistors, FETs and Diodes Device Data
Figure 11. Collector Saturation Region 5
MDC3105LT1
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
inches mm
SOT-23 SOT-23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less. · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. · The soldering temperature and time shall not exceed 260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling. Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The 556°C / W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MDC3105LT1
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
CASE 318-08 ISSUE AE
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MDC3105LT1
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JAPAN: Nippon Motorola Ltd. Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd. 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
Motorola Small-Signal Transistors, FETs and Diodes MDC3105LT1 / D Device Data
MDC3105LT1 / D