ECO7806 Wide-band linear power amplifiers (470 MHz) with transist
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
ECO7806
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
CONTENTS 10.1 ABSTRACT INTRODUCTION THEORETICAL CONSIDERATIONS equivalent circuit transistor input output BLW32 BLW33 output networks input networks SINGLE AMPLIFIERS WITH BLW32 BLW33 Practical considerations Practical optimization method Measured results COMBINED AMPLIFIER WITH BLW32 BLW33 Practical considerations Measured results CONCLUSIONS REFERENCES RECOMMENDATIONS LIST COMPONENTS BLW32 amplifiers BLW33 AMPLIFIER PRINTED-CIRCUIT BOARDS 1/16 INCH PFTE DOUBLE CLAD BLW32 BLW33 AMPLIFIERS
Application Note ECO7806
1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
ABSTRACT
Application Note ECO7806
application T.V. transposers band IV/V (470 MHz) some wideband linear power amplifiers have been made with BLW32 BLW33. single stage amplifier with BLW32 gave minimum output power peak sync. 2-tone i.m.d. power gain 11.4 ±0.55 similar amplifier with BLW33 produced minimum output peak sync. same i.m.d. power gain 10.4 ±0.85 2-stage amplifier with BLW32 driver BLW33 output showed minimum output power peak sync. i.m.d. with overall power gain 22.5 INTRODUCTION
This report describes theoretical aspects practical realisation some wide-band power amplifiers transposer service bands (470 MHz). amplifiers designed with BLW32 BLW33 transistors. These devices intended resp. peak sync output developed ultra linear applications. this purpose transistors have operate class transistors encapsulated inch capstan envelope with ceramic cap. Because their high gain they excellently suited realisation wide-band type amplifiers. THEORETICAL CONSIDERATIONS equivalent circuit transistor input output BLW32 BLW33
class operation BLW32 BLW33 specified follows: BLW32: BLW33: Although power gain, input impedance optimum narrow band load impedance versus frequency given Data sheets above operating points, actual class operation points chosen differ somewhat circuits described this report. Namely, from earlier investigations known that wide-band properties more favourable lower load impedances. have chosen following class operation points: BLW32: 22.5 BLW33: 22.5 corresponding typical gain, input load impedances have been calculated. values thus obtained three frequencies given Tables
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Table BLW32 gain (dB) 16.5 14.0 11.4 (SERIES) 4.59 4.42 4.12 (SERIES) 1.67 3.61 5.86
Application Note ECO7806
(MHz) Table BLW33
(SERIES) 41.5 28.9 17.7
(SERIES) 39.4 38.0 33.0
(MHz)
gain (dB) 15.0 12.5 10.1
(SERIES) 3.60 3.45 3.19
(SERIES) 1.90 3.26 4.90
(SERIES) 27.1 21.0 14.5
(SERIES) 17.4 18.4 17.3
facilitate calculations approximate equivalent circuits transistor input output impedances given. They shown Figs
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0.90 4.42
0.27
MGM416
Fig.1 BLW32.
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0.82 3.45
0.47
MGM417
Fig.2 BLW33.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
output networks
Application Note ECO7806
circuits will designed printed circuit boards with P.T.F.E.-fibre-glass dielectric with 2.74 thickness 1/16 inch. input output network start with piece stripline having width being width base collector leads. dielectric 1/16 inch characteristic impedance 37.6 length collector leads amounts base leads different length. output impedance both transistors rather high Chebyshev bandpass-filter configuration will chosen match load. will shown later elements sufficient obtain acceptable VSWR through band. bandpass filter derived from low-pass prototype having cut-off frequency equal bandwidth final filter, i.e. characteristic resistance (see Ref.1). transformation procedure depicted Figs These figures BLW32. determine Fig.3 have keep mind that input (and output) RC-product remains constant with impedance transformation, 4.2/50 Next, determine quantity being equal which cut-off frequency low-pass prototype already mentioned time constant, 1,183 Then calculated according 0,75 which characteristic resistance filter being 1,183 22,46 1,399 transformation from low-pass bandpass made Shunting each capacitor inductor Putting capacitor series with each inductor, such that resonance obtained geometric mean frequency band: 860.470 635.8
1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
handbook, halfpage
MGM418
Fig.3
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MGM419
Fig.4
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MGM420
Fig.5
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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MGM421
Fig.6
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MGM422
Fig.7
This means Fig.4 that: 9.081 2.79 transform input part filter actual output impedance transistor (see Fig.5). This done with ideal transformer having primary inductance, 82/50.9.081 14.89 transformation ratio which which 1.281
This ideal transformer subjected Norton transformation (see Fig.6) which inductances become 3.27 11.62 -2.55 resp. final situation then depicted Fig.7 with 3.27 11.62 2.55 22.46 2.55 19.91 resulting maximum VSWR equal {(x3 1)/(x3 1)}2 which: filter this becomes: 1.22, which very acceptable value justifying conclusion that number filter elements sufficient. next step transformation this filter stripline circuit. transmission line shorter than wavelength following equivalence reasonably accurate (see Fig.8):
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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MGM423
Fig.8
which propagation speed being 3.108 air-line. Starting from Fig.7 must keep mind that part (viz. 0.27 inside transistor. inductors then replaced striplines. consequence this transformation that some points circuit parasitic capacitances introduced. This corrected adjusting values second reason correcting latter parasitic series inductance. remaining part composed pieces stripline with different characteristics impedances. part with lower serves accomodate collector lead transistor. parasitic series inductance appr. which must subtracted from L2'. remaining part split equal pieces both sides result transformation described above shown Fig.9 Table
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4.55 0.27
37.6
,,,,,
output
MGM424
Fig.9 also Table
exact analysis this circuit results maximum output VSWR 1.66 which rather high. Therefore complete circuit subjected computer optimization procedure with object reduce maximum output VSWR lowest possible value. results given Table 1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Table ELEMENT Smax 7.15 28.4 27.8 2.79 27.8 26.7 5.14 1.66 BEFORE OPTIM. 6.84 27.7 29.8 2.76 29.8 33.4 4.01 1.35 AFTER OPTIM.
Application Note ECO7806
UNIT
final step practical dimensions striplines must determined. printed-circuit board material P.T.F.E. fibre-glass with thickness 1/16 inch dielectric constant 2.74. lines with must have width length reduction factor 1.43. collector 37.6 must have width length reduction factor 1.52. results latter transformation found final circuit diagram parts list. input networks
approach followed these networks rather similar those described Refs However, there exception: Because higher input impedance BLW32, compared BLW98, smaller amount transformation required. consequence this single section matching network sufficient. Generally speaking said that this section must have loaded Q-factor appr. produce required gain compensation. This means that total inductive reactance transistor matching network) must times input resistance transistor (see Fig.10).
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transistor input
MGM425
Fig.10
tuning this circuit then appr. MHz. single section transforms transistor impedance value above that some `back-transformation' required. This done reducing value blocking capacitor (8.2 instead pF). case BLW33 input impedance somewhat lower, section network advisable. Here, blocking capacitor final steps same previous section, viz. transformation stripline computer optimization. results again found circuit diagrams. 1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
SINGLE AMPLIFIERS WITH BLW32 BLW33 Practical considerations
Application Note ECO7806
previous pages theoretical approach been discussed. practice intention realize small compact amplifiers printed-circuit board with input output terminals in-line easy cascading several amplifiers. printed-circuit board needs double copper clad P.T.F.E. fibre-glass dielectric losses UHF. With typical 2.74 choice between thickness 1/16 1/32 inch. principle 1/32 inch possible especially lines this design become narrow, that risk under etching high. have decided dielectric 1/16 inch, what means that these lines wide. Another problem being with application 1/32 inch very small surface soldering multi-layer chips also unusual ratio between width chip track. Figure shows circuit diagram BLW32 class amplifier with biasing, whilst Fig.12 circuit drawn BLW33. Both circuits contain bias network with transistor type BD136. lists components given Tables printed-circuit boards Figs correct earthing upper earth sheet parts directly connected lower sheet soldering copper straps edges printed-circuit board. emitters were grounded short possible applying copper straps under emitter leads. that reason holes board were square instead round. components situated side board viz. side tracks. transistors were screwed extruded aluminium heatsink, resulting average stud temperature appr. both circuits tuning capacitors applied. They film dielectric type with three tags. Both earth terminals through holes soldered upper lower earth plane. experimental phase, coupling capacitors collector bandpass sections `Micro thin-trim' type Later, they probably replaced fixed multilayer chip capacitors. coaxial connectors type. They soldered upper lower earth plane. general, earth connections have made short possible. Practical optimization method
Both prototypes were built according result theoretical part. proved that such theoretical approach very valuable. led, some relatively small modifications ultimate design. Optimization small signal basis been done with circuits inserted network analyzer chain, having swept (scattering)-parameter facilities. From this set-up examine under dynamical conditions effect power gain (represented S21), input- output impedances (resp. S22) feedback (S12) tuning modifications circuit amplifier. correction power gain over whole range arranged applying appropriate mismatch. resulting high VSWR, especially frequency, reduced equalizer. tuning S-parameter set-up means that optimized flat gain, same time input reflection damping tuned minimum highest frequency MHz.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Measured results
Application Note ECO7806
Figures show practical results resp. BLW32 BLW33 amplifiers. results units both given. They numbered (2). clear interpretation readings expression reflection damping some figures given Table Table Refl. damping 1)/(S which voltage standing wave ratio (VSWR) REFL. DAMPING (dB) 0.631 0.398 0.251 0.158 0.063 0.04 REFL. COEFF. 4.42 2.32 1.67 1.38 1.22 1.13 1.08
Examining Figs will that both cases, reflection damping about input VSWR about near MHz, whilst output VSWR, with respect varies between 1.06 over band. After optimization small signals, i.m.d. been measured 2-tone set-up. Although advised apply 3-tone test method determining i.m.d. case systems, 2-tone test shows good correlation with former (see Ref.3). practice this means that 3-tone test with tones below peak sync. level, in-band i.m. product least down, whilst same amplifier show distance i.m. products least with respect equal tones case 2-tone test with equal peak output power. results given curves Figs these amplifiers, which each have been constructed measured, results according expected ones wide-band operation. three channels peak sync power 3-tone i.m.d. -60, been measured too. Table gives impression average results BLW32 BLW33. Table CHANNEL (471.25 MHz) (615.25 MHz) (863.25 MHz) BLW32 1286 1308 BLW33
sync. i.m.d. (average amplifiers) Tables show more complete test results. Comparing afore mentioned 3-tone (-60 results with 2-tone (-47 figures appears that: single amplifiers typical frequency decoupling elements divided over bias circuit amplifier circuit. This done because case concentrating low-frequency decoupling elements bias board, parasitic oscillations occurred.
1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
some idea reproducibility practical amplifiers, equivalent units have been built. They screwed heatsinks having thermal resistance appr. °C/W. average ambient temperature stud temperature rises about power dissipation about 11.5 single amplifiers described, straight forward method small signal tuning S-parameter equipment afterwards 2-tones test followed. this method reliable results could obtained. However case double amplifier appeared rather difficult find optimum between acceptable flat gain curve sufficient output power with i.m.d. Because there correlation between single tone compression point i.m.d. linear amplifier, following dynamic tuning applied: BLW33 compression starts around output. gain complete amplifier appr. appr. (+13 dBm) drive power should sufficient. This amount swept power available from sweep oscillator HP8620C combination with plug-in unit HP86222A. Because internal swept output power level very stable almost unaffectable strong input VSWR variation BLW32 amplifier. BLW32, channel results somewhat better 18%) when measured under 3-tone conditions, whilst channel figures about lower. case BLW33, 3-tone results somewhat different both tested units. average they between those 2-tone test. gain figures about same. description 2-tone 3-tone test chain testing referred Ref.3. COMBINED AMPLIFIER WITH BLW32 BLW33 Practical considerations
experiment both amplifiers, being tuned optimum performance, were cascaded. that case output BLW32 accept mismatch, specially lower frequencies, caused BLW33 amplifier. gain (S21) becomes appr. whilst input output reflection damping combination show somewhat different values. However, trend same. From this experiment idea came integrate both amplifiers printed-circuit board. easiest solution direct connection striplines, maintaining blocking capacitor (see Fig.12) concentrating elements (see Fig.11) (see Fig.12) single tuning element. Figure shows total circuit diagram, Fig.15 printed-circuit board amplifier part Table list components. create amplitude variation sweep generator amplitude modulated input) with square wave pulse generated with PM5715 pulse generator. output amplifier under test again attenuated (about dB), detected supplied oscilloscope being horizontally driven means available sweep output HP8620C. Figure shows block diagram measuring set-up, Figs screen pictures swept output power different input levels (+7, dBm) which compression clearly shown. From above mentioned experiments appeared that blocking capacitor, Fig.26, better could decreased Measured results
Being tuned good large signal behaviour i.m.d. results both amplifiers constructed given Figs Figures resp. show gain curves input power dBm) Figs S-parameter results. peak sync. power 3-tone i.m.d. -60, been measured three channels. Table shows results combination (2). 1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Table CHANNEL (471.25 MHz) (615.25 MHz) (863.25 MHz) sync i.m.d. (amplifier Table shows more complete test results. Comparing 2-tone (-47 3-tone (-60 results appears that: 1045
Application Note ECO7806
BLW32 BLW33
combination BLW32/33 shows appr. equal results channels However channel results somewhat lower. gain figures about same. CONCLUSIONS
preceding pages theoretical practical designs have been described some wide-band (470 MHz) high quality linear amplifiers, utilizing BLW32 BLW33 transistors operating class class operation points, these wide-band applications, differ somewhat from those being published data sheets narrow band applications. This better wide-band loading, what again resulted better i.m.d. performance. flatness power gain versus frequency obtained applying increasing amount mismatch when frequency becomes lower. This seen disadvantage system, because preceding driver stage accept that mismatch. present combination, however, driver large that difficulties experienced. RECOMMENDATIONS
flat power gain characteristic combined with input VSWR obtained Applying equalizing network input. coaxial isolator circulator input. However, these devices have restricted bandwidths. Applying method which equal amplifiers have been connected parallel with wide-band coaxial hybrids basis. that configuration output power will nearly doubled, whilst input VSWR system becomes max. value mainly given properties these devices. reflected power will absorbed resistor matching isolated port. suitable type hybrid ultra-miniature coupler, model 10264-3 (range GHz) 0264-3 (range 0.44 0.88 GHz) from Anaren Microwave Inc. Compared with rest components such arrangement rather expensive. wishes construct couplers oneself done with `wire-line' type Sage. assembling, however, asks special tools. this report number measuring methods given. could considered apply swept compression test method with external wide-band amplifier need linearity) external possibility testing amplifiers asking more drive power.
1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
REFERENCES
Application Note ECO7806
Ref.1: G.L. Matthaei, Young E.M.T. Jones Microwaves filters, impedance-matching networks, coupling structures. Graw-Hill Book Company, York. Ref.2: Pitzalis, R.A. Gilson Tables impedance matching networks with approximate prescribed attenuation versus frequency slopes. IEEE Transactions microwave theory techniques, Vol. MTT-19, April 1971, 381-386. Ref.3: M.J. Wide-band linear power amplifier (470 MHz) with transistors BLW98; appl. report ECO7905.
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BLW32
22.5 BD136
BAW62
MGM426
Fig.11 BLW32 circuit.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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BLW33
22.5
BAW62
BD136
MGM427
Fig.12 BLW33 circuit.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Table Table List components BLW32 amplifier (Figs stripline stripline stripline stripline stripline (±5%) (±5%) (±5%) (±5%) (±5%)
Application Note ECO7806
multilayer ceramic chip capacitor, (Amercian Technical Ceramics) type 100A-8R2-J-Px-50 film dielectric trimmer (cat. 2222 05001) polyester capacitor multilayer ceramic chip capacitor (cat. 2222 13101) polyester capacitor electrolytic capacitor micro thin-trim, Tekelec Airtronic part AT9401-4-SL1 width microchoke 20.8 19.3 23.4 carbon resistor CR25 type carbon resistor CR25 type power metal film resistor PR37 type power metal film resistor PR52 type cermet preset potentiometer carbon resistor CR25 type carbon resistor CR25 type BAW62
stripline 37.6 11.5 stripline 37.6
List components BLW33 amplifier (Figs stripline stripline stripline stripline stripline multilayer ceramic chip capacitor (cat. 2222 13101) multilayer ceramic chip capacitor, type 100A-2R7-B-Px-50 film dielectric trimmer (cat. 2222 05001) polyester capacitor polyester capacitor electrolytic capacitor micro thin-trim, Tekelec Airtronic part 9401-4-SL1 width microchoke 16.2 21.7 20.4
stripline 37.6 stripline 37.6
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
(±5%) (±5%) (±5%) (±5%) (±5%) (±5%) (±5%) carbon resistor CR25 type carbon resistor CR25 type power metal film resistor PR37 type enamelled wire-wound resistor WR0617E style carbon resistor CR25 style cermet preset potentiometer carbon resistor CR25 style carbon resistor CR25 style BAW62
Application Note ECO7806
Printed-circuit boards 1/16 inch PFTE double clad
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34.5
MGM429
Fig.13 Printed-circuit board BLW32.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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34.5
MGM430
Fig.14 Printed-circuit board BLW33.
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34.5
MGM441
Fig.15 Printed-circuit board BLW32-33.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
MGM431
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(dB)
(MHz)
Fig.16 BLW32.
MGM432
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(dB)
(MHz)
Fig.17 BLW32.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
MGM433
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(dB)
(MHz)
Fig.18 BLW32.
MGM434
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(dB)
(MHz)
Fig.19 BLW33.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
MGM435
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(dB)
(MHz)
Fig.20 BLW33.
MGM436
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(dB)
(MHz)
Fig.21 BLW33.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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MGM437
(mW)
BLW32
(MHz)
1000
Fig.22 Ampl. no.1.
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MGM438
(mW)
BLW32
(MHz)
1000
Fig.23 Ampl. no.2.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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1600
MGM439
(mW) 1200
BLW33
(MHz)
1000
Fig.24 Ampl. no.1.
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2000
MGM440
(mW) 1600
1200
BLW33
(MHz)
1000
Fig.25 Ampl. no.2.
1998
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BLW32 22.5 BD136
Philips Semiconductors
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
BLW33
22.5 BAW62
BAW62
BD136
MGM428
Application Note ECO7806
Fig.26 BLW32 BLW33 circuit.
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Table List components BLW32 BLW33 amplifier (Figs stripline stripline stripline stripline stripline stripline stripline stripline stripline (±5%) (±5%) (±5%) (±5%) (±5%) (±5%) (±5%) (±10%)
Application Note ECO7806
multilayer ceramic chip capacitor, type 100A-8R2-J-Px-50 film dielectric trimmer (cat.no. 2222 05001) polyester capacitor multilayer ceramic chip capacitor (cat.no. 2222 13101) polyester capacitor electrolytic capacitor micro thin-trim, Tekelec Airtronic part 9401-4-SL1 width microshoke 20.8 19.3 23.4 21.7 16.2 20.4 carbon resistor CR25 type carbon resistor CR25 type power metal film resistor PR37 type power metal film resistor PR52 type cermet preset potentiometer carbon resistor CR25 style carbon resistor CR25 style enamelled wire-wound resistor 0617E style carbon resistor CR25 type BAW62
stripline 37.6 11.5 stripline 37.6
stripline 37.6
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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DYNAMIC COMPRESSION TEST SET-UP
SWEEP OSCILLATOR HP8620
86222A
D.U.T.
ATTENUATOR Watts)
COAXIAL DETECTOR PM7520 (negative)
(BLW32/33)
PULSE GENERATOR PM5715 rep. time: 20-100 nsec delay time: nsec duration time: µsec ramp time: nsec output: impedance:
sweep SCOPE
(PM3260)
MGM442
Fig.27 Dynamic compression test set-up.
MGM443
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(MHz)
Fig.28 Compression.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
MGM444
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(MHz)
Fig.29 Compression.
MGM445
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(MHz)
Fig.30 Compression.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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1600
MGM446
(mW) 1200
BLW32/BLW33
(MHz)
1000
Fig.31 Ampl. no.1.
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1600
MGM447
(mW) 1200
BLW32/BLW33
(MHz)
1000
Fig.32 Ampl. no.2.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
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1600
MGM448
(mW) 1200
BLW32/BLW33 1000
(MHz)
Fig.33 Ampl. no.1.
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1600
MGM449
(mW) 1200
BLW32/BLW33 1000
(MHz)
Fig.34 Ampl. no.2.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
MGM450
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(dB)
(MHz)
Fig.35 BLW32 BLW33.
MGM451
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(dB)
(MHz)
Fig.36 BLW32 BLW33.
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Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Application Note ECO7806
MGM452
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(dB)
(MHz)
Fig.37 BLW32 BLW33.
Table BLW32 I.M.D. (dB) SYNC. (mW) 1(1) 1245 1007 1189 1021 10.8 11.3 11.7 11.15 12.0 GAIN (dB) 12.3
CHANNEL Note
Corresponding amplifier number.
1998
Wide-band linear power amplifiers (470 MHz) with transistors BLW32 BLW33
Table BLW33 I.M.D. (dB) 1132 1775 2263 1161 1762 2293 1342 2014 SYNC. (mW) 1440 1916 2246 1454 1902 2321 1063 1580 2265 10.6 10.7
Application Note ECO7806
CHANNEL
GAIN (dB) 10.3
10.25
Table BLW32 BLW33 I.M.D. (dB) SYNC. (mW) 1045 1706 2311 1440 2014 1384 GAIN (dB) 21.65 21.40 19.75
CHANNEL
1998
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1010, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 0044 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580920 France: Carnot, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Vicente Pinzon, 173, floor, 04547-130 PAULO, Brazil, Tel. 2333, Fax. 2382 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 3263 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2865, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1998
Internet:
SCA57
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
Date release: 1998
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