ADE-508-016 Rev.0 Aug. 2001 Hitachi Hitachi neither warrants gran

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Diodes Mobile Communications
ADE-508-016 Rev.0 Aug. 2001 Hitachi
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such fail-safes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Preface
Thank purchasing Hitachi semiconductor products. recent years, development information technology (IT) industry become prominent. Specifically, mobile communication spreading widely improvements such compact, light-weight devices with multi-functions. These improvements were widely adopted information-data communications other than telecommunication because their full reservation communication capacity, improvement communication quality, high-privacy function. With ample product lineup, Hitachi diodes mobile communications widely used various electronic devices. application notes Hitachi mobile communications describes electrical characteristics, maximum ratings, packages, reliability, applications, etc., that necessary user select appropriate type their needs. There demand smaller, lighter, lower priced digital mobile phones with longer battery life. Lower loss also demanded antenna switching circuits which largest cause high-frequency electrical loss well lower prices. Note that technical information this document describes general characteristics product. detailed data, please contact Hitachi sales office. Product specifications modified improvement, please check latest information website Semiconductor Integrated Circuits Group. Typical applications include for:
Digital mobile phones, digital cordless phones, Various radio equipment (hand transceivers, mobile transceivers), Antenna switches PCS, shifting frequency CDMA, other communication devices.
Rev.0, Aug. 2001, page
Rev.0, Aug. 2001, page
Contents
Section Discrete Products Mobile Phones. Section Variable Capacitance Diodes Section Hitachi Diodes Mobile Communications
3.10 3.11 3.12 3.13 3.14 3.15 3.16 Characteristics Variable Capacitance Diode Standard Characteristics Variable Capacitance Diodes. Digital Cellular Phone System Configuration Example System Configuration Example Diodes Switching Antenna Characteristics Diode Standard. Characteristics Diodes Schottky Barrier Diode. Characteristics Schottky Barrier Diode Standard. Characteristics Schottky Barrier Diodes Power Control Circuit Mobile Phones. Characteristics Zener Diodes Surge Absorption. Main Characteristics Zener Diodes Surge Absorption Example Using Zener Diode Surge Absorption Arrangement
Section Standard Dimensions Diode Packages. Section Structure Diodes. Section Quality Control Reliability.
Hitachi Diode Manufacturing Process Quality Control. Periodic Reliability Tests Periodic Reliability Data Precautions Storage Precautions Transportation Precautions Soldering Cleaning Genaral Precautions Circuit Mounting General Precautions (General Precautions Circuit Designing) Characteristic Parameters their Relation Reliability.
Section Precautions Application.
Section Product Shipment After-Sales Service
Taping Specifications After-Sales Service System
Rev.0, Aug. 2001, page
Described Products
Variable capacitance diodes.
HVU17 HVU350B HVU355B HVU359 HVU383B HVC350B HVC355B HVC358B HVC359 HVC362 HVC365 HVC366 HVC368B HVC369B HVC372B HVC374B HVC375B HVC376B HVC379B HVC381B HVC383B HVC386B HVD350B HVD355B HVD358B HVD359 HVD365 HVD368B HVD369B HVD372B HVD381B
Diodes
HVU131 HVU132 HVU133 HVC131 HVC132 HVC133 HVC134 HVC135 HVC136 HVD131 HVD132 HVD133 HVD135 HVD136 HVD141 HVD142
Schottky barrier diodes
HSU88 HSU227 HSU276A HSC88 HSC226 HSC276A HSC278 HSD278 HSM88AS HSM88ASR HSM88WA HSM88WK HSM198S HSM276AS HSM276ASR HSB88AS HSB88YP HSB88WK HSB88WA HSB226S HSB226WK HSB226YP HSB276AS HSB276AYP HSB0104YP HRC0103A HRC0203B
Zener diodes surge absorption.
HZU-G Series HZM5.6ZFA HZM6.2ZFA HZM6.2ZWA HZM6.8ZMFA HZM6.8MFA HZM6.8MWA HZM6.8ZMWA
Rev.0, Aug. 2001, page
Section Discrete Products Mobile Phones
Mixer
Quad demodulator
Antenna
Buffer amplifier
Antenna switch
Quad demodulator
TCXO
High-frequency detector stage
line
Surge absorption
power management power-supply control Battery Interface connector port
Battery charger switching circuit
Main applications
Antenna switching circuit Frequency signal detection circuit Reverse current prevention circuit Serge absorption circuit
diodes Variable capacitance diodes Schottky barrier diodes Schottky barrier diodes Zener diodes
Rev.0, Aug. 2001, page
Section Variable Capacitance Diodes
High-frequency front-end block diagram
Mixer
Quad demodulator
Antenna
Buffer amplifier
Quad demodulator
TCXO
circuit example
Colpitts oscillator
Output Package Type HVC380B HVC381B HVD355B HVD369B Variable capacitance diode HVD372B
Vcont
Rev.0, Aug. 2001, page
Application Type
Test Condition Test Condition Test Condition Test Condition Test Condition Test Condition
Absolute Maximum Rating 25°C) VR(V) IR(nA) Package Type
Electrical Characteristics 25°C) C(pF) rs()
(°C) C(VR)/C(VR) f(MHz) 1/4.5 HVU17
Tstg (°C)
HVU17
HVU350B
HVU350B HVU355B HVU359 HVU383B
HVU355B
HVU359
HVU383B
HVC350B
HVC350B HVC355B HVC358B HVC359 HVC362 HVC365 HVC366 HVC368B
HVC355B
HVC358B
HVC359
HVC362
HVC365
HVC366
HVC368B
HVC369B
HVC369B HVC372B HVC374B HVC375B
HVC372B
Characteristics Variable Capacitance Diode Standard
HVC374B
Section Hitachi Diodes Mobile Communications
Rev.0, Aug. 2001, page
HVC375B
min. IR(µA) max. VR(V) Ta(°C) min. VR(V) f(MHz) max. VR(V) f(MHz) min. max. VR(V) f(MHz) min. max. 50.00 85.00 +125 5.60 16.10 27.30 5.23 8.84 +125 15.50 17.00 2.80 5.00 6.00 +125 6.40 7.20 2.20 2.55 2.95 +125 24.80 29.80 3.00 6.00 8.30 +125 19.00 21.00 2.00 8.50 10.00 3.50 4.50 5.50 +125 15.50 17.00 2.00 5.00 6.00 +125 6.40 7.20 2.20 2.55 2.95 +125 19.50 21.00 2.20 8.00 9.30 +125 24.80 29.80 3.00 6.00 8.30 +125 41.60 49.90 3.00 10.10 14.80 +125 27.05 28.55 3.00 6.05 7.55 +125 6.30 6.80 1.39 4.35 4.95 +125 15.00 16.50 2.20 9.00 10.20 5.00 6.00 +125 4.65 5.15 2.30 1.85 2.15 +125 15.00 17.00 2.00 7.00 8.50 +125 21.50 24.00 1.68 1.75 12.50 14.50 +125 15.00 16.50 4.00 5.00 6.00 3.30 4.00
Application Type Tstg (°C) C(VR)/C(VR) f(MHz) 0.5/2.5
Test Condition Test Condition Test Condition Test Condition Test Condition Test Condition
Absolute Maximum Rating 25°C) VR(V) IR(nA) Package Type
Electrical Characteristics 25°C) C(pF) rs()
(°C)
HVC376B
+125
HVC376B HVC379B HVC381B HVC383B
HVC379B
HVC381B
HVC383B
min. IR(µA) max. VR(V) Ta(°C) +125 +125 +125
Rev.0, Aug. 2001, page
HVC386B HVD350B HVD355B HVD358B HVD359 HVD365 HVD368B HVD369B HVD372B HVD381B min. VR(V) f(MHz) max. VR(V) f(MHz) min. max. VR(V) f(MHz) min. max. 25.00 28.50 4.30 4.80 6.80 2.90 3.20 1.80 1.25 1.53 10.00 11.00 1.65 5.80 6.40 19.00 21.00 2.00 8.50 10.00 3.50 4.50 5.50 43.00 49.00 1.80 18.50 25.50 15.50 17.00 2.80 5.00 6.00 6.40 7.20 2.80 2.55 2.95 19.50 21.00 2.20 8.00 9.30 24.80 29.80 3.00 6.00 8.30 27.05 28.55 3.00 6.05 7.55 15.00 16.50 2.20 9.00 10.20 5.00 6.00 4.65 5.15 2.30 1.85 2.15 15.00 17.00 2.00 7.00 8.50 10.00 11.00 1.65 5.80 6.40
HVC386B
+125
HVD350B
+125
HVD355B
+125
HVD358B
+125
HVD359
+125
HVD365
+125
HVD368B
+125
HVD369B
+125
HVD372B
+125
Characteristics Variable Capacitance Diode Standard (cont)
HVD381B
+125
Characteristics Variable Capacitance Diodes
HVC362
HVU17 HVC386B
HVC376B
Capacitance between pins (pF)
HVC383 HVC375B HVC368B HVC350B HVC372B HVC358B HVC359 HVC365 HVC374B
HVC381B HVC369B HVC355B HVC366
HVC380B HVC379B
Reverse voltage
Rev.0, Aug. 2001, page
Digital Cellular Phone
noise amplifier Antenna Receive mixer
HVC132 HVC136 HVD131 HVD132 HVD136
TCXO
Control signal
HVC359 HVD359, etc.
HSC88 HSC278 HSC276A Power amplifier
Speech/data Transmit mixer
Variable Capacitance Diodes
1000 Digital cordless phones Marine satellite communications HVU355B HVC355B HVD355B HVC369B HVD369B HVC379B HVC372B, HVD372B HVC380B
Cordless phones Pagers Marine telecoms
Cordless phones Vehicle phones Taxi radios Mobile phones
HVU359 HVC359 HVD359 HVC362 HVU369B HVC374B HVC376B
HVC350B, HVU350B, HVC375B, HVC368B HVC359, HVU359, HVD369B HVC358B
Rev.0, Aug. 2001, page
Diversity antenna
System Configuration Example
Down converter
IF-IC
Baseband Modem Speech CODEC Audio Channel CODEC
Main antenna
MMIC Antenna switch Buffer PLL-IC Buffer Quadrature modulation
Data CBIC (User logic)
Memory (ROM/RAM)
driver
0123456789 HITACHI
Diodes
Block power control discrete Product HSB276AS, HSC278, HSC88, etc. HVC350B/358B/372B HVC355B/369B antenna switch diversity antenna switch (reel type) Surge protection data input/output part HVC131 134/135/136 HVD131, etc. HZM6.8ZMFA, etc. Features small package Variable capacitance diodes with high capacitance change ratio serial resistance
loss, small package (PIN diodes)
capacitance, high surge tolerance, ample lineup
Rev.0, Aug. 2001, page
System Configuration Example
Quadrature demodulator Equalizer Speech CODEC
PRE-LTP
Antenna switch
user logic (modem-Rx) user logic (modem-Tx)
PLL-IC
User logic (channel CODEC)
Data
module Phase Quadrature comparator modulator Memory (ROM/RAM) driver
0123456789 HITACHI
Diodes
Block power control discrete Product HSB276A, HSC278, HSC88, etc. HVC350B/358B/372B HVC355B/369B, etc. antenna switch Surge protection data input/output part HVC131 134/135/136 HZM6.8ZMFA, etc. Features small package Variable capacitance diodes with high capacitance change ratio serial resistance loss, small package (PIN diodes) capacitance, high surge tolerance, ample lineup
Rev.0, Aug. 2001, page
Diodes Switching Antenna
diode switching sharing antenna
Mixer
Quad demodulator
Antenna
Buffer amplifier
Quad demodulator
TCXO
Antenna switching circuit example
Antenna
Antenna switching circuit example
Antenna Resonance circuit
Package Type HVC135 HVC136 HVD131 HVD132 HVD133 HVD135 HVD136 HVD141 HVD142
diodes diodes
Rev.0, Aug. 2001, page
Absolute Maximum Rating 25°C) VR(V) rf() Package Type
Test Condition Test Condition Test Condition Test Condition Test Condition
Application (mA) (mW) (°C) Tstg (°C) +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 0.55 0.85 0.55 0.85 min. IR(µA) max. VR(V) max. IF(mA) 0.85 typ. 0.55 max. IF(mA) (MHz) HVU131 HVU132 HVU133 HVC131 HVC132 HVC133 HVC134 HVC135 HVC136 HVD131 HVD132 HVD133 HVD135 HVD136 HVD141 HVD142
Type
Electrical Characteristics 25°C) IR(µA) VF(V) C(pF)
switching antenna
HVU131 HVU132 HVU133
Rev.0, Aug. 2001, page
max. VR(V) (MHz) 0.80 0.50 1.00 0.90 0.80 0.50 1.00 0.90 0.40 0.60 0.45 0.80 0.50 1.00 0.90 0.60 0.45 0.82 0.35
HVC131 HVC132 HVC133
HVC134 HVC135 HVC136 HVD131 HVD132 HVD133
Characteristics Diode Standard
HVD135 HVD136 HVD141 HVD142
Characteristics Diodes
High-frequency forward resistance
HVC134 HVC131 HVD131 HVC132 HVD132 HVD141
HVD142
HVC1
HVC133 HVD133
10-1 10-5
10-4
10-3
10-2
Forward current
Rev.0, Aug. 2001, page
Schottky Barrier Diode
Antenna
Receiver high-frequency signal processing unit amplifier Quad demodulator
Duplexer
High-frequency detection circuit example
circuit
High-frequency detection circuit example Antenna Package
circuit
Type HSC88 HSC276A HSC278
CMPAK
HSB88AS HSB276AS
CMPAK-4 HSB226YP HSB88YP Schottky barrier diode
Rev.0, Aug. 2001, page
Absolute Maximum Rating 25°C) VR(V) IR(µA) Package
Test Condition Test Condition Test Condition Test Condition Test Condition Test Condition f(MHz) max. VR(mA) f(MHz) max. IF(mA)
3.10
Application Type Tstg (°C) 0.85 0.85 0.85 0.90 0.90 +125 +125 +125 +125 +125 2.80 0.45 0.45 0.90 0.85 0.85 1.50 0.85 1.50 MPAK MPAK MPAK MPAK MPAK MPAK MPAK CMPAK
Test Condition min. IR(mA)
IF(mA)
Electrical Characteristics 25°C) VF(mV) C(pF) C(pF) VF(mV)
VRRM IFSM (mA) (mA) (mA) (mA) (°C) +125 +125 +125 3(A) 3(A) 3(A) +125 +100 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 typ. max. VR(V) 2.45
HSU88 Schottky barrier HSU227 HSU276A HSC88
HSC226
typ. max. VR(V) 0.45
HSC276A HSC278
HSD278
HSM88AS
HSM88ASR
HSM88WA
HSM88WK
HSM198S HSM276AS HSM276ASR HSB88AS
HSB88YP
CMPAK-4 CMPAK CMPAK CMPAK CMPAK CMPAK-4 CMPAK CMPAK-4 CMPAK-4
HSB88WK
HSB88WA
Characteristics Schottky Barrier Diode Standard
HSB226S
0.45
HSB226WK
HSB226YP
Rev.0, Aug. 2001, page
HSB276AS HSB276AYP HSB0104YP HRC0103A HRC0203B
min. max. VF(V) min. typ. max. IF(mA) 0.29 0.35 0.33 0.38 0.58 0.44 0.52
3.11
10-2
Characteristics Schottky Barrier Diodes
HSM198S HSC278 HSC226 HSB0104YP HSC276A HSB88WA
HRC0103A HRC0203A Pulse measurement HSB0104YP
Forward current
Forward current
10-2 10-3 10-4 10-5
10-4
10-5
10-6
Forward voltage
10-6
Forward voltage
10-6
1MHz
Capacitance between pins (pF)
Reverse current
10-7
10-8
HSC8
HSC2 HSC27
10-9
HSC88
HSM198S
10-1
Reverse voltage
10-10
Reverse voltage
Rev.0, Aug. 2001, page
3.12
Power Control Circuit Mobile Phones
Antenna Receiver
Transmitter Isolator
Baseband
Small Signal Schottky Barrier Diodes Mobile Communications
(1406) Type HS276A HS88 HSC276A HSU276A HSB276AS HSC88 HSU88 HSB88AS HSB88WA HSB88WK HSB226S HSB226WK
(Top view)
(1608)
(2512)
CMPAK-3 (SC-70)
CMPAK-4 (SC-70M)
MPAK-3 (SC-59A) Application
HSB276AYP HSM276AS Signal processing HSM276ASR HSB83YP HSB88YP HSM88ASS HSM88ASR HSM88WA HSM88WK Signal processing, reverse current protection Signal processing, reverse current protection
(Top view)
HS226 HS227 HS278 arrangement
HSC226 HSU227 HSD278 HSC278
(Top view)
HSB226YP
(Top view)
Rev.0, Aug. 2001, page
3.13
Type
Characteristics Zener Diodes Surge Absorption
Absolute maximum ratings 25°C) (mW)
(°C)
Tstg (°C) +150
HZU-G Series HZM5.6ZFA HZM6.2ZFA HZM6.2ZWA HZM6.8ZMFA HZM6.8MFA HZM6.8MWA HZM6.8ZMWA
Notes: figure section 3.14. figure section 3.14. figure section 3.14.
Electrical Characteristics 25°C) Zener Voltage Type HZU5.1G HZU5.6G HZU6.2G HZU6.8G HZU7.5G HZU8.2G HZU9.1G HZU10G HZM5.6ZFA HZM6.2ZFA HZM6.2ZWA HZM6.8ZMFA HZM6.8MFA HZM6.8MWA
Test Condition
Reverse Current
Test Condition
Operating Resistance
Test Condition
Static electricity destroy voltage (kV)
(mA)
(mA)
Failure determination criteria
4.84 5.37 5.31 5.92 5.86 6.53 6.47 7.14 7.06 7.84 7.76 8.64 8.56 9.55 9.45 10.55 5.31 5.92 5.90 6.50 5.90 6.50 6.47 7.00 6.47 7.00 6.47 7.00
standard used
HZM6.8ZMWA 6.47 7.00
Notes: value 40-ms pulse. forward reverse currents applied times each. Surge tolerance between cathode anode.
Rev.0, Aug. 2001, page
3.14
Main Characteristics Zener Diodes Surge Absorption
Polyimide board 0.8t
1.0mm
Power dissipation (mW)
Power dissipation (mW)
Copper foil
Unit:
Printed board size 1.6t Material: Glass epoxy copper foil
0.6mm
Ambient temperature (°C)
Ambient temperature (°C)
Figure Power dissipation Ambient temperature
1.0mm
0.8mm
Figure Power dissipation Ambient temperature
Copper foil
Power dissipation (mW)
Printed board size 1.6t Material: Glass epoxy copper foil
Ambient temperature (°C)
Figure Power dissipation Ambient temperature
Rev.0, Aug. 2001, page
3.15
Example Using Zener Diode Surge Absorption
Mobile Cellular Phone
Terminal Connector
Terminal Connector
HZB6.8ZMFA
Interface
3.16
Arrangement
MPAK CMPAK MPAK-5 CMPAK-5
Cathode Anode (Top view) Cathode Cathode Anode Cathode Cathode Cathode Anode Cathode
(Top view)
(Top view)
Rev.0, Aug. 2001, page
Section Standard Dimensions Diode Packages
Note: description dimensions footprint (land), pages
0.05 0.05
0.10 0.10
Unit:
0.13 0.05
0.05 0.10
0.10 0.10
0.55
Unit:
0.13 0.05
0.10
Unit:
0.15
0.10
1.25 0.15
0.15 0.15
0.15
Rev.0, Aug. 2001, page
0.10 0.05
(0.65)
0.16 0.06
0.10
Unit:
0.15
0.10
(0.95) (0.95)
(0.3)
(0.95)
(0.95)
0.16
0.05
(0.65)
Unit:
(0.6)
(0.6)
0.05
(0.3)
0.05
(0.425)
0.10
Unit:
0.16 0.06
(0.425) 1.25
0.05
0.05
Rev.0, Aug. 2001, page
(0.2)
(0.65) (0.65)
0.05
(0.65) (0.65)
0.05
(0.425)
Unit:
0.16- 0.06
(0.425) 1.25
0.05
0.05
(0.65) (0.65)
(0.65)
(0.65)
(0.425)
(0.2)
Unit:
0.13- 0.03
0.12
1.25
(0.2)
(0.425)
0.05
Rev.0, Aug. 2001, page
Section Structure Diodes
Assembly structure
Diode chip
Epoxy resin Bonding wire Lead frame
Assembly structure
Bonding wire Epoxy resin
Lead frame
Diode chip
Assembly structure MPAK CMPAK
Epoxy resin Bonding wire Lead frame
Diode chip
Rev.0, Aug. 2001, page
Section Quality Control Reliability
Hitachi Diode Manufacturing Process Quality Control
Hitachi makes every possible effort maintain quality diodes from manufacturing shipment, pays strict attention quality control production process. Meticulous care over each manufacturing process enables timely detection faults, helps maintain stable quality control. Figure shows manufacturing process, Figure shows details quality control.
Process
Quality Control
Method
Materials, parts Materials, parts
Materials parts inspection
Characteristics test materials parts semiconductor devices Production equipment, environment,auxiliary materials, workers administration
Sampling judgment, Quality level affirmation Quality level affirmation
Manufacturing
Screening
Process Quality Control
Sampling judgment, Quality level affirmation Classification, inspection
100% inspection Products Product inspection
100% inspection appearance electrical characteristics
Sampling inspection appearance electrical characteristics
Sampling judgment
Reliability test
Reliability level affirmation
Warehouse Information feedback Shipping Quality information Claims Field record Other general quality information
Customers
Figure Manufacturing Process Quality Control Flowchart
Rev.0, Aug. 2001, page
Process Name Diffusion Wafer Photolithography Metallization
Main Equipment
Control Item
Remarks
Metallurgical wafer/batch Diffusion depth microscope Resistivity Resistivity meter Metallurgical External appearance wafers microscope
Metallurgical microscope
External appearance lots/day
Dicing
Pellet grading Stereoscopic microscope Stereoscopic microscope
External appearance units
External appearance lots/day
Assembly Frame bonding wire
Tension gage Stereoscopic microscope
Wire bonding strength External appearance
Molding
Soldering process Marking
Disconnection Forming Stereoscopic microscope Automatic measuring equipment Tension gage External appearance
Total inspection Packing material Taping Packing Inspection
Electrical characteristics Cover tape Peeling strength
units
time/day/machine
Equipment each type inspection
Electrical 9015 characteristics Major 0.1% External appearance Minor 1.0% dimensions
Warehouse Work process work Inspection process
Figure Quality Control Flowchart Diodes Mobile Communications
Rev.0, Aug. 2001, page
Periodic Reliability Tests
Periodic reliability tests performed guarantee reliability Hitachi diodes mobile communications. Table
Test Items Operation life test High temp./humidity storage Temp. cycling Pressure cooker Solder heat resistance
Periodic Reliability Tests (Examples)
Conditions Max, 125°C, 1000 85°C, 85%R.H., 1000 +150°C, cycles 121°C, 100%R.H., 260°C,
Periodic Reliability Data
Examples reliability test data shown table 6.2.
Table
Classification Mechanical tests
Reliability Test Results MPAK, CMPAK, URP, UFP,
Test Items Terminal strength Terminal strength Shock test Drop test Variable frequency vibration Conditions 15°, bebding, time (MPAK, CMPAK, URP) Static load, (MPAK) 1500 times each directions Height: Onto thick maple board 2000 direction +150°C, cycles 260°C 5°C, 235°C 5°C, 100°C, cycles +65°C, R.H. 90°C, cycles 121°C, 100%R.H., 125°C, 1000 -55°C, 1000 85°C, 85%R.H., 1000 25°C, Max, 1000
Result 0/15 0/15 0/15 0/100 0/15 0/450 0/280 0/360 0/160 0/40 0/360 0/120 0/120 0/400 0/45
Environmental tests
Temp. cycling Solder heat resistance Solderability Thermal shock Temp. humidity cycling
Life tests
High temp. storage temp. storage High temp. humidity storage Operation life
Rev.0, Aug. 2001, page
Section Precautions Application
Precautions Storage
Although general precautions storage transportation electronic components applied they semiconductor devices, latter require certain special precautions addition these. following account includes includes general precautions. Storage Semiconductor Devices following methods storage advisable semiconductor devices. precuations observed, faults electrical characteristics, solderability, external appearance other attributes occur. some cases, failure also result. Precautions storage follows: storage location should kept within optimum ranges temperature humidity: 35°C R.H. optimal conditions. atmosphere storage location should contain noxious gases, amound dust should minimal. Storage containers should susceptible static electricity. Semiconductor devices should subjected loads. When storing long periods, store non-processed state. When leads have already been formed, corrosion their bent portion leads occur. sure that sudden temperature changes sufficient cause condensation occur during storage devices.
Precautions Transportation
When transporting semiconductor devices their assembly units subsystems, same precautions other electronic components should taken. items listed section have followed. Transportation containers, jigs etc., should pick static charge vibration route. Persons handling semiconductor devices should grounded high resistance discharge static electricity that adhering their clothing. resistance value should around other person should come between person being discharged ground (GND). When transporting semiconductor devices PCBs, keep mechanical vibration shocks absolute minimum.
Rev.0, Aug. 2001, page
Precautions Soldering
diodes formed consideration mountability, mounted without modification. When mounting PCB, adhesive used temporarily hold diodes place before solder applied. When diode held adhesive, sure that subjected undue stress. Using mounter diodes result bending leads, make sure that force more than applied. also required apply force leads being mounted, especially UFP, package. time mounting, nozzle's presser force should exceed Since diodes come small package, aware thermal stress from soldering. Soldering should done short time possible. conditions high-temperature soldering, please contact individual basis.
When flow solder used: 260°C less, less When soldering iron used: 350°C less, less When high-temperature atmosphere used: 235°C less, less apply high-temperature soldering using soldering iron etc. package since
puts large heat stress package. reflow method mounting packages. Surface Mounting Diode (SMD) recommended conditions soldering diodes shown table 7.1. Table
Package MPAK-5
Soldering Mounting Inset Conditions
Footprint (land) Dimensions
0.95 0.95
Cream Solder Thickness 0.15 0.30
MPAK
0.95 0.95
0.15 0.30
Rev.0, Aug. 2001, page
Table
Package CMPAK-4
Soldering Mounting Inset Conditions (cont)
Footprint (land) Dimensions
Cream Solder Thickness 0.15 0.30
CMPAK
0.65 0.65
0.15 0.30
CMPAK-5
0.65 0.65
0.15 0.30
0.15 0.30
0.15 0.30
0.15 0.30
Notes: Footprint (land) dimension units: Cream solder thickness reflow installation.
Cleaning
Fading Marking Color Codes Clearness markings color-fastness color codes lost cleaning. sure check these after using cleaning agents.
Rev.0, Aug. 2001, page
Electrical mechanical characteristics (discoloration, deformation, denaturation, etc.) After cleaning PCB, some corrosive material contained cleaning agent flux remain semiconductor devices, causing corrosion device wiring leads with resulting loss reliablility. Thorough cleaning therefore required PCBs. recommended that level purity after cleaning should conform with standard below. Table
Item Remaining volume Resistance solvent (after extraction)
Level Purity After Cleaning
Standard
g/cm
Notes: surface area: Both sides mounted components. Extract solvent: Isopropyl alcohol (Resistance solvent before extraction Extraction method: Clean both sides with ml/2.54 2.54 (minimum minute) Measuring extracted solvent resistance: Conductivity meter MIL-P-28809A details standard.
Ultrasonic cleaning should avoid resonant devices. recommend following conditions.
SMD, etc. Frequency Time Others (device should resonant) Make sure that neither devices come into contact with vibration source. Ultrasonic power output time)
Genaral Precautions Circuit Mounting
Matching circuit design initial standards prerequisite regards reliability design, while margin must allowed consideration deratings fluctuations characteristics. Reliability problems involve wiring, external surge, reactance load, noise margin, area safe operation (ASO), reverse bias, flyback pulse, static electricity pulse stress more.
Rev.0, Aug. 2001, page
General Precautions (General Precautions Circuit Designing)
Important factors achieving specified system reliability using devices within parameter specifications shown catalog observing following points, taking account influence peripheral components. Keep peripheral temperature possible order avoid high temperatures vicinity semiconductor elements. Ensure that power supply voltage, input voltage, power consumption, etc., within specification, degrading. Ensure that excessive voltage applied caused input, output, power supply, other pins. Also ensure that these pins subjected strong electromagnetic waves. Ensure that static electricity generated during use. When using high-speed elements, which have extremely fine structure, either provide protection circuitry, etc., input section, else ensure that electrostatic pulses applied. When power turned off, ensure that voltage application does become unbalanced. example, excessive stress will exerted voltage applied input power supply pins, etc., when circuit ground pins floating. Note electromagnetic wave environments source strong electromagnetic waves vicinity Zener diode alter characteristics diode. example, drop breakdown voltage been reported when portable wireless unit (144 MHz, MHz) with output brought within distance from diode. Please consult Hitachi there risk exposure strong electromagnetic waves operating environment. About traceability help handle customer inquiries smoothly, please write down following labels component's package reels before using diode products. Type number (INT.C/TYPE) number (LOT) Weekly code (W/C)
Rev.0, Aug. 2001, page
Characteristic Parameters their Relation Reliability
Each semiconductor device characteristic parameters prescribed accoding function application. Each these parameters predetermined range which should matched. system design, significance these parameters varies great deal depending application, design must project margin initial characteristics regards critical parameters, derating must carried out. former case, device should selected with regard limit operation range system. statistical design method should employed, reliability testing well failure criteria Hitachi semiconductor devices should also taken into consideration. case derating, refer derating applications given under Hitachi Semiconductor Device Reliability. Since majority parameter fluctuations cannot foreseen under conditions use, althouth design employing initial standards considered justifiable many cases, design with reference failure criteria needed regards significant system items items with margin. following points consideration with regard parameters.
Whether significance parameter extends system failure. state parameter's initial value margin. Does parameter change over time, change direction margin? change permissible device with other devices? redundant design possible? possible introduce statistical design method parameters?
Rev.0, Aug. 2001, page
Section Product Shipment After-Sales Service
Taping Specifications
Table list taping specifications. Table
Appearance MPAK-5 CMPAK-5
Taping Specifications
Packing Form Packing Unit 3000 (units/reel)
Packing Specification Code
Comments
withdrawl direction
Taping
(Taping Right)
MPAK CMPAK
Taping
3000 (units/reel)
(Taping Right)
withdrawl direction
(Marked surface
CMPAK-4
Taping
3000 (units/reel)
(Taping Right)
withdrawl direction
(Marked surface
Taping
3000 (units/reel)
(Taping Right)
withdrawl direction
Taping
4000 (units/reel) 8000 (units/reel)
(Taping Right)
withdrawl direction
withdrawl direction
Taping
8000 (units/reel)
withdrawl direction
Notes: Missing devices 0.2%/reel, continous miss 0/reel. Recommended taping specifications.
Rev.0, Aug. 2001, page
After-Sales Service System
Hitachi after-sales service system with sales, product marketing, design, fabrication, quality assurance departments united that quick appropriate responses made customer inquires event failures related diodes. Thorough quality control system prevents reoccurrence failures customers Hitachi diodes with assurance. Figure shows after-sale service system.
Customer Claim (failure, information) Sales product marketing departments
Quality assurance department
Failure analysis
Fabrication department Report
Design department
Execute countermeasures against reoccurrence
Quality assurance department Report Sales product marketing departments Response Customer
Advice confirmation execution countermeasures
Figure After-Sales Service System
Rev.0, Aug. 2001, page
Diodes Mobile Communications Publication Date: Edition, August 2001 Published Customer Service Division Semiconductor Integrated Circuits Hitachi, Ltd. Edited Technical Documentation Group Hitachi Kodaira Semiconductor Co., Ltd. Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.

ADE-508-016 Rev.0 Aug. 2001 Hitachi Hitachi neither warrants gran

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