Build Biasing Circuit UHF/VHF Amplifier ADE-208-605D 5th. Edition
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BB304M
Build Biasing Circuit UHF/VHF Amplifier
ADE-208-605D 5th. Edition Mar. 2001 Features
Build Biasing Circuit; reduce using parts cost board space. High gain; typ. MHz) noise characteristics; typ. MHz) Wide supply voltage range; Applicable with supply voltage. Withstanding ESD; Build absorbing diode. Withstand 200V C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
MPAK-4
Source Gate1 Gate2 Drain
Notes:
Marking BB304M individual type number HITACHI BBFET.
BB304M
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Symbol VG1S VG2S Tstg Ratings Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature +150 Unit
Electrical Characteristics 25°C)
Item Symbol +100 ±100 Unit Test Conditions 200µA, VG1S VG2S +10µA, VG2S ±10µA, VG1S VG1S +9V, VG2S ±9V, VG1S VG2S 100µA VG1S 100µA Drain source breakdown voltage V(BR)DSS Gate1 source breakdown voltage V(BR)G1SS Gate2 source breakdown voltage V(BR)G2SS Gate1 source cutoff current Gate2 source cutoff current Gate1 source cutoff voltage Gate2 source cutoff voltage G1SS G2SS VG1S(off) VG2S(off)
BB304M
Electrical Characteristics 25°C)
Item Input capacitance Output capacitance Symbol 0.003 0.02 0.05 Unit VG2S 180k VG2S 470k VG2S 180k, 1kHz VG2S 470k, 1kHz VG2S 180k, 200MHz VG2S 470k, 200MHz VG2S 180k, 200MHz VG2S 470k, 200MHz Test Conditions VG2S 180k, 1MHz
Reverse transfer capacitance Drain current D(op) D(op) Forward transfer admittance |yfs|1 |yfs|2 Power gain Noise figure
BB304M
Main Characteristics
Test Circuit Operating Items D(op) |yfs|, Ciss, Coss, Crss,
Gate Gate
Drain
Source
200MHz Power Gain, Noise Figure Test Circuit
1000p
1000p
1000p
Input(50) 1000p
1000p
BBFET 1000p
Output(50)
1000p 1SV70 470k
1SV70
1000p Unit Resistance Capacitance
Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 5mm, 2Turns
BB304M
Maximum Channel Power Dissipation Curve (mW) (mA)
Typical Output Characteristics
Channel Power Dissipation
Drain Current
(°C)
mbient Temperature
Drain Source Voltage
Drain Current Gate2 Source Voltage (mA)
Drain Current Gate1 Voltage (mA) Gate1 Voltage
Drain Current
Drain Current
Gate2 Source Voltage
VG2S
BB304M
Drain Current Gate1 Voltege (mA) (mA) Drain Current Gate1 Voltege
Drain Current
Drain Current
Gate1 Voltage
Gate1 Voltage
Forward Transfer Admittance (mS)
Forward Transfer Admittance (mS)
Forward Transfer Admittance Gate1 Voltage
Forward Transfer Admittance Gate1 Voltage
Gate1 Voltage
Gate1 Voltage
BB304M
Drain Current Gate1 Voltege (mA) (mA) Drain Current Gate1 Voltege
Drain Current
Drain Current
Gate1 Voltage
Gate1 Voltage
Forward Transfer Admittance (mS)
Forward Transfer Admittance (mS)
Forward Transfer Admittance Gate1 Voltage
Forward Transfer Admittance Gate1 Voltage
Gate1 Voltage
Gate1 Voltage
BB304M
Noise Figure Drain Current variable Gate Resistance Drain Current Gate Resistance
Drain Current (mA)
Gain Reduction Gate2 Source Voltage Gain Reduction (dB) Input Capacitance Ciss (pF) Gate2 Source Voltage
Drain Current (mA)
Noise Figure (dB)
Input Capacitance Gate2 Source Voltage
Gate2 Source Voltage
BB304M
Parameter Frequency
-1.5 -120° -90° -60° 180° 150°
Parameter Frequency
120°
Scale: div.
-150°
-30°
Test Condition 1000 step)
Test Condition 1000 step)
Parameter Frequency
120°
Parameter Frequency
Scale: 0.002 div.
150°
180°
-150° -30° -120° -90° -60° -1.5
Test Condition 1000 step)
Test Condition 1000 step)
BB304M
Sparameter (VDS VG2S 470k,
(MHz) 1000 0.996 0.993 0.987 0.978 0.972 0.954 0.943 0.925 0.910 0.893 0.880 0.861 0.847 0.829 0.816 0.804 0.791 0.779 0.764 0.753 -5.3 -10.9 -16.6 -21.9 -27.4 -33.2 -38.2 -43.2 -48.0 -52.5 -57.4 -62.1 -66.1 -69.9 -74.1 -78.2 -82.4 -86.1 -89.5 -92.4 2.74 2.73 2.68 2.66 2.63 2.57 2.50 2.43 2.37 2.30 2.24 2.17 2.10 2.02 1.96 1.91 1.85 1.79 1.73 1.68 174.0 168.0 162.3 156.3 150.4 144.3 138.7 133.3 128.0 122.6 117.5 112.7 108.1 103.6 99.1 94.8 80.4 86.3 82.2 78.3 0.00096 0.00130 0.00203 0.00285 0.00335 0.00385 0.00455 0.00488 0.00526 0.00522 0.00498 0.00512 0.00497 0.00455 0.00418 0.00372 0.00329 0.00275 0.00233 0.00258 98.6 84.4 83.6 72.3 69.7 68.3 63.2 55.4 59.8 56.1 53.2 49.1 53.4 53.6 51.6 55.7 62.4 73.0 82.4 105.1 0.985 0.991 0.990 0.988 0.985 0.982 0.979 0.975 0.971 0.967 0.962 0.957 0.952 0.947 0.943 0.937 0.933 0.928 0.921 0.918 -1.9 -4.5 -6.5 -9.4 -11.6 -14.0 -16.2 -18.4 -21.0 -23.0 -25.2 -27.3 -29.4 -31.6 -33.7 -35.8 -38.0 -40.0 -42.1 -44.2
BB304M
Package Dimensions January, 2001
Unit:
2.95 0.95 0.95
0.05
0.05
0.65
0.16 0.06
0.15
0.95
0.85
0.65
0.05
0.05
Hitachi Code JEDEC EIAJ Mass (reference value)
MPAK-4 Conforms 0.013
BB304M
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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